A preparation method of mems supercapacitor with controllable dielectric film thickness

Abstract

The invention belongs to the technical field of micro-energy manufacture and specifically relates to a preparation method of a MEMS supercapacitor with a controllable dielectric film. The method firstly adopts a wet etching process to etch a three-dimensional groove array structure on a silicon substrate to serve as a carrier of the electrode, thereby remarkably increasing the specific surface area of the electrode and improving the capacitive characteristic of the supercapacitor, and being easy to integrate and manufacture on the other hand; according to the anodic oxidation method, a thickness-controllable Al2O3 thin film can be directly formed on the basis of the electrode thin film and served as a dielectric layer of the capacitor; the method is simple in process, controllable in thickness and not limited by the morphology of the substrate. According to the wet etching technology of the silicon wafer, the depth-width ratio of the groove can be controlled; proper groove width and height are designed, thereby greatly increasing the specific surface area of the electrode. Compared with the traditional electrostatic capacitor, the electrostatic supercapacitor prepared on the basisof the anodic oxidation method and the groove array-etched substrate has great advantages in both process cost and performance aspects.

Description

technical field [0001] The invention belongs to the technical field of micro-energy manufacturing, and relates to a method for preparing a MEMS electrostatic supercapacitor with simple process, controllable dielectric film thickness and high energy density applied in a microsystem, specifically a MEMS with controllable dielectric film thickness Preparation method of supercapacitor. [0002] technical background [0003] Micro Electro Mechanical System (MEMS), referred to as MEMS, is a new type of interdisciplinary technology developed in recent years. It integrates functions such as microstructure, microsensor, microactuator, micropower supply and signal processing control. , has the advantages of low cost, small size, strong self-control, and high reliability. It is a cutting-edge technology in the 21st century based on micro / nano technology. Among them, the micro power supply is the key basic component in the MEMS, and the miniaturization and integration of the power suppl...

AI Technical Summary

Problems solved by technology

The traditional sol-gel method, magnetron sputtering method and other thin film preparation methods are limited by the substrate morphology, and it is difficult to achieve uniform deposition of dielectric thin films on three-dimensional grooved substrates. However, atomic layer deposition (ALD) does not Limited by the shape of the substrate, but this method has the disadvantages of complicated process, long time-consuming, high cost, etc.

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