Sea urchin-like CoZnAl-LDH/RGO/g-C3N4Z type heterojunction, and preparation method and application thereof

A g-c3n4z, sea urchin-shaped technology, applied in the field of semiconductor composite materials, can solve the problems that did not mention the semiconductor performance of LDHs materials, and achieve the effect of multiple catalytic reaction active sites, large specific surface area, and uniform particle size
CN109012731AActive Publication Date: 2018-12-18NANJING UNIV OF SCI & TECH
4 Cites 13 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANJING UNIV OF SCI & TECH
Publication Date
2018-12-18

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a sea urchin-like CoZnAl-LDH / RGO / g-C3N4Z type heterojunction and a preparation method thereof. The sea urchin-like CoZnAl-LDH / RGO / g-C3N4Z type heterojunction is prepared by a simple hydrothermal reaction. The preparation method comprises the following steps: dropwise adding an ultrasonically dispersed reduced graphene oxide and graphite suspension to a deionized aqueous solution of cobalt nitrate, zinc nitrate, aluminum nitrate and urea, performing stirring, transferring the obtained mixture into an autoclave, and carrying out the high-temperature hydrothermal reactionto obtain the sea urchin-like CoZnAl-LDH / RGO / g-C3N4Z type heterojunction with a size of 5-7 [mu]m. The sea urchin-like CoZnAl-LDH / RGO / g-C3N4Z type heterojunction has the advantages of high specific surface area, high photon utilization rate and high photogenerated electron and hole separation efficiency, and can be applied to the fields of catalysis and energy conversion.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of semiconductor composite materials, in particular to a sea urchin-like CoZnAl-LDH / RGO / g-C 3 N 4 Z-type heterojunction and its preparation method. Background technique

[0002] With the development of industrialization of human society and the rapid growth of population, the problems of energy shortage and environmental pollution have become the focus of common attention all over the world. At present, fossil energy (oil, coal, and natural gas) is still the main energy source for human beings, and the development of renewable energy still requires a lot of technical support. Photocatalytic technology based on semiconductor materials is known as a green new technology and an ideal way to solve energy shortage and environmental pollution. Traditional TiO 2 Due to the defects of large bandgap width, low utilization rate of visible light and high recombination rate of photogenerated electrons and holes, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More