N-type conjugated polymers containing thiazole bridged naphthalene diimides and their preparation and application in organic thin film transistors and photovoltaic devices
A naphthalene diimide and conjugated polymer technology, which is applied in the field of organic semiconductor materials, can solve the problems of unfavorable n-type electron transport and the difficulty of electron transport in organic thin film transistor devices, so as to improve charge transport and front-line orbital energy levels The effect of lowering and increasing the potential barrier
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Embodiment 1
[0029] Preparation of thiazole-bridged naphthalene diimide monomer (compound 4)
[0030] The chemical synthesis process is as follows, and the specific reaction steps and reaction conditions are as follows:
[0031]
[0032] (1) Raw materials or intermediate reactants. The initial raw materials 1 and 2 were prepared according to the methods reported in the literature. Tetrakis-triphenylphosphine palladium, liquid bromine, sodium carbonate and various solvents were purchased from commercial channels.
[0033] (2) Preparation of Compound 3
[0034] Under the protection of inert gas argon, raw material 1 (2.2 grams), raw material 2 (3.0 grams) are dissolved in the toluene of 30 milliliters, after taking out gas twice, add catalyst tetrakis-triphenylphosphine palladium (185 milligrams ), followed by pumping and purging twice, followed by reflux overnight reaction. After the reaction was completed, the solvent was removed, purified on a silica gel column and recrystallized to ...
Embodiment 2
[0038] Preparation of representative n-type conjugated polymer materials containing thiazole bridged naphthalene diimide (referred to as PNDI-Tz2FT)
[0039] The chemical reaction process is as follows, and the specific reaction steps and reaction conditions are as follows:
[0040]
[0041] (1) Raw materials or intermediate reactants, monomer 5, tris(dibenzylideneacetone)dipalladium, tris(o-tolyl)phosphine, and solvents were purchased from commercial channels.
[0042] (2) Under nitrogen protection, compound 4 (126.4 mg, 0.1 mmol), compound 5 (44.6 mg, 0.1 mmol), three (dibenzylideneacetone) dipalladium (1.8 mg) and three (o-toluene Base) phosphine (4.9 mg) was dissolved in a mixed solvent of o-xylene (2 ml) and N,N-dimethylformamide (0.4 ml), stirred at 115° C. for 24 hours, and the reaction was terminated after thiophene capping. Precipitate the polymer in methanol, then extract it with methanol, acetone, n-hexane, dichloromethane, and chloroform, and finally heat and e...
Embodiment 3
[0044]Taking the polymer representative material PNDI-Tz2FT obtained in Example 2 as an example to illustrate the application of this type of polymer material as an organic semiconductor in an organic thin film transistor device
[0045] The following examples will contain thiazole bridged naphthalimide n-type conjugated polymer representative material PNDI-Tz2FT proposed by the present invention and its application in organic thin film transistor devices
[0046] The fabrication process of the organic thin film transistor device is as follows:
[0047] First, 25nm gold source / drain electrodes were evaporated on a highly n-type doped silicon / silicon dioxide wafer; then a layer of organic polymer semiconductor film was spin-coated under a hot stage heating the substrate at 120°C, and then Thermal annealing at 200°C for 10 minutes in a nitrogen environment, then spin-coat a layer of polymethyl methacrylate with a thickness of about 500 nm on the semiconductor layer as a dielectr...
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