Graphene-ZnO composite material, preparation method thereof, and ultraviolet detector
A composite material and graphene technology, applied in the field of ultraviolet detectors, can solve the problems of low specific surface area, high electron-hole recombination rate, non-light corrosion resistance, etc., and achieve the goal of increasing surface area, high absorption rate and low reflectance Effect
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[0030] The invention provides a kind of preparation method of graphene-ZnO composite material, comprises the following steps:
[0031] (1) Adopt radio frequency plasma enhanced chemical vapor deposition to obtain vertical graphene flakes on the substrate, and the substrate adopts nickel foam.
[0032] Preferably, the specific process of using radio frequency plasma enhanced chemical vapor deposition method to vertically grow graphene flakes on the substrate includes: placing the foamed nickel substrate into the reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment. On the stage, argon gas is introduced first, and the gas pressure in the reaction chamber is kept at 1 Torr. Under a current of 60A, the temperature of the substrate is raised to 600-1100°C at a heating rate of 20-25°C / min, such as 600°C, 700°C, 800°C, 900°C, 1000°C or 1100°C; then, methane and hydrogen are passed into the reaction chamber. When the gas pressure in the reaction cham...
Embodiment 1
[0048] (1) Use oxygen plasma to clean the reaction chamber of the RF plasma-enhanced chemical vapor deposition equipment; during the cleaning process: make the sample stage temperature reach 700°C, set the oxygen plasma power to 800-1000W; the cleaning time is 80min.
[0049] (2) Dip the nickel foam substrate to be used into isopropanol solution and ultrasonically clean it, then rinse it with deionized water, and dry it with nitrogen gas.
[0050] (3) put the foamed nickel substrate after step (2) into the reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment and have resistance heating on the sample stage, first pass into argon, make its flow rate be 20sccm, Keep the gas pressure in the reaction chamber at 1 Torr, raise the temperature of the substrate to 600°C at a rate of 20°C / min under a current of 60A; then pass methane and hydrogen into the reaction chamber, wherein the flow rate of methane is 1 sccm, hydrogen The flow rate is 20sccm. Wh...
Embodiment 2
[0055] (1) Use oxygen plasma to clean the reaction chamber of the radio frequency plasma enhanced chemical vapor deposition equipment; during the cleaning process: make the temperature of the sample stage reach 750°C, set the oxygen plasma power to 900W; the cleaning time is 90min.
[0056] (2) Dip the nickel foam substrate to be used into an acetone solution and ultrasonically clean it, then rinse it with deionized water, and dry it with nitrogen.
[0057] (3) put the foamed nickel substrate after step (2) into the reaction chamber of radio frequency plasma enhanced chemical vapor deposition equipment and have resistance heating on the sample stage, first pass into argon, make its flow rate be 20sccm, Keep the gas pressure in the reaction chamber at 1 Torr, raise the temperature of the substrate to 800°C at a heating rate of 23°C / min under a current of 60A; then pass methane and hydrogen into the reaction chamber, wherein the flow rate of methane is 10 sccm, hydrogen The flow...
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