Silicon nitride, ceramic slurry and preparation method

A technology of ceramic slurry and silicon nitride, which is applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve problems such as thermal shock resistance and mechanical strength, and avoid large-area hard agglomeration. Simple and consistent particle shape

Active Publication Date: 2022-02-18
QINGDAO CUP NEW MATERIALS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The substrate is the core component of the integrated circuit of power electronic devices. Under complex and harsh service conditions, the reason for affecting the stability of the substrate is the joint action of extreme thermal and mechanical stress, and the existing substrate materials are difficult to have good thermal shock resistance. and mechanical strength, so there is an urgent need for materials with excellent thermal conductivity and mechanical properties to be used in the field of substrate manufacturing

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  • Silicon nitride, ceramic slurry and preparation method
  • Silicon nitride, ceramic slurry and preparation method
  • Silicon nitride, ceramic slurry and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Under the nitrogen pressure of 1 MPa, the high-purity α-silicon nitride powder with a particle size of 3 μm, an α-phase content of 85%, an impurity content of 2%, and a consistent particle shape was prepared by a temperature-controlled activated combustion synthesis method. The silicon nitride powder is coarsely sieved with a 600-mesh screen, and placed in nitric acid, hydrochloric acid, sulfuric acid (the volume content ratio is respectively 20%, 60%, 20%, and the acid solution mass fraction is respectively 40%, 15%, 58% %) composition of the mixed acid was pickled for 3 hours, then washed 3 times with water, and dried by vacuum drying after suction filtration. Afterwards, place the silicon nitride powder in a heating furnace for heat treatment. The specific process is to heat treat at 600°C for 5 hours under a flowing nitrogen atmosphere, with a heating rate of 8°C / min, in which the nitrogen purity is 99.999%, and the flow rate is 3m / s . The specific surface area of ...

Embodiment 2

[0056] Under 3MPa nitrogen pressure, the high-purity α-silicon nitride powder with a particle size of 5 μm, an α-phase content of 90%, an impurity content of 1.6%, and a consistent particle shape was prepared by a temperature-controlled activated combustion synthesis method. The silicon nitride powder is coarsely sieved with a 600-mesh screen, and placed in nitric acid, hydrochloric acid, sulfuric acid (the volume content ratio is respectively 20%, 60%, 20%, and the acid solution mass fraction is respectively 40%, 15%, 58% %) of the mixed acid composition was pickled for 5 hours, then washed 5 times with water, and dried by vacuum drying after suction filtration. Afterwards, place the silicon nitride powder in a heating furnace for heat treatment. The specific process is heat treatment at 700°C for 4 hours under a flowing nitrogen atmosphere, with a heating rate of 8°C / min, in which the nitrogen purity is 99.999%, and the flow rate is 3m / s . The specific surface area of ​​the...

Embodiment 3

[0060] Under the nitrogen pressure of 0.6MPa, the high-purity α-silicon nitride powder with particle size of 1.5μm, α-phase content of 93%, impurity content of 1.3% and consistent particle shape was prepared by temperature-controlled activated combustion synthesis method. The silicon nitride powder is coarsely sieved with a 600-mesh screen, and placed in nitric acid, hydrochloric acid, sulfuric acid (the volume content ratio is respectively 20%, 60%, 20%, and the acid solution mass fraction is respectively 40%, 15%, 58% %) of the mixed acid composition was pickled for 5 hours, then washed 5 times with water, and dried by vacuum drying after suction filtration. Afterwards, place the silicon nitride powder in a heating furnace for heat treatment. The specific process is heat treatment at 800°C for 6 hours under a flowing nitrogen atmosphere, with a heating rate of 8°C / min, in which the nitrogen purity is 99.999%, and the flow rate is 3m / s . The specific surface area of ​​the si...

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Abstract

Silicon nitride powder and its preparation method, ceramic slurry containing the silicon nitride powder and its preparation method. Unoxidized silicon nitride surface area of ​​silicon nitride powder: The total silicon nitride surface area is 0.40‑0.85. The ceramic slurry includes the silicon nitride powder, sintering aids and organic components with hydroxyl, carboxyl, amino, ester, aldehyde, carbonyl and other groups. The preparation method of the ceramic slurry includes: (1) preparing silicon nitride primary powder by a temperature-controlled activated combustion synthesis method; (2) coarsely sieving the silicon nitride primary powder, pickling with a mixed acid of nitric acid, hydrochloric acid, and sulfuric acid, Then wash with water, suction filter and dry; (3) put the powder obtained in step 2 in a heating device, and remove the additive by heat treatment under the condition of flowing nitrogen atmosphere; (4) mix the powder obtained in step 3 with the fluid and place it in a grinder for grinding , to obtain the product after sieving.

Description

technical field [0001] The invention relates to silicon nitride, a silicon nitride ceramic slurry and a preparation method thereof, in particular to a silicon nitride ceramic slurry for a substrate and a preparation method thereof, belonging to the field of ceramic materials. Background technique [0002] With the high development of science and technology such as energy, space technology, new energy power and high-speed rail ground transportation, the demand for high-power power electronic devices is increasing day by day. The substrate is the core component of the integrated circuit of power electronic devices. Under complex and harsh service conditions, the reason for affecting the stability of the substrate is the joint action of extreme thermal and mechanical stress, and the existing substrate materials are difficult to have good thermal shock resistance. And mechanical strength, so there is an urgent need for materials with excellent thermal conductivity and mechanical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/584H05K1/03
CPCC04B2235/5445C04B2235/5436C04B2235/5463C04B2235/5409C04B35/622C04B35/62625C04B35/632C04B2235/3217C04B2235/3225C04B2235/3206C04B2235/3208C04B35/6342C04B35/63424C04B35/63444C04B35/63488C04B2235/72C04B35/62605C04B35/62645C04B35/6261C04B2235/3878C04B2235/3852C04B2235/3882C04B35/587C04B35/593C04B35/64C04B35/6263C01B21/0682C01P2004/02C01P2002/72C01P2006/12C01P2004/60H05K1/0306
Inventor 崔巍成会明邹艺峰李飞张杰
Owner QINGDAO CUP NEW MATERIALS CO LTD
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