A manufacturing method of a field emission ion neutralizer chip based on an SOI process
A manufacturing method and field emission technology, which are applied in the manufacture of discharge tubes/lamps, electrode system manufacture, and utilization of plasma, etc., can solve the problems of damage to the structure of the emitter, poor thermal conductivity, influence on stability and life, etc. The effect of reducing power consumption, improving emission efficiency, and preventing short circuit of cathode grid
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[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.
[0035] The manufacturing method of the field emission ion neutralizer chip based on SOI technology among the present invention, generally speaking, comprises the steps:
[0036] 1. Use the bottom silicon 103 in the surface-polished SOI silicon wafer as the cathode base, and the bottom silicon 103 adopts high doping (because the doping method is uncertain, the present invention uses the electrica...
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