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High-resistance buffer layer having multi-quantum well structure composite buffer layer and preparation method thereof

A multi-quantum well structure and composite buffer layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of contamination of the reaction chamber, metal impurity contamination of epitaxial materials, poor repeatability, etc. Leakage, high resistance and high quality GaN-based buffer layer growth, the effect of improving crystal quality

Inactive Publication Date: 2019-05-31
XIAMEN SANAN INTEGRATED CIRCUIT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The first method is to obtain a high-resistance GaN epitaxial layer by introducing defect impurities, at the cost of sacrificing the crystal quality of the epitaxial film. At the same time, the method of obtaining high-resistance GaN by controlling the growth conditions is highly dependent on equipment and has poor repeatability. ; The second method to introduce metal impurities generally has a strong memory effect and will contaminate the reaction chamber, making subsequent epitaxial materials have the risk of being contaminated by metal impurities. Therefore, a dedicated MOCVD is usually required to grow high-resistance GaN-based epitaxial materials and introduce impurities. Will increase channel 2DEG scattering and reduce electron mobility

Method used

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  • High-resistance buffer layer having multi-quantum well structure composite buffer layer and preparation method thereof
  • High-resistance buffer layer having multi-quantum well structure composite buffer layer and preparation method thereof
  • High-resistance buffer layer having multi-quantum well structure composite buffer layer and preparation method thereof

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Embodiment 1

[0029] refer to figure 1 , a high-resistance buffer layer comprising a multi-quantum well structure composite buffer layer, comprising: a substrate 1, a nucleation layer 2, a multi-quantum well structure composite buffer layer, and a high-resistance buffer layer 4 arranged sequentially from bottom to top;

[0030] The multiple quantum well structure composite buffer layer further includes: n groups of Al x Ga 1-x N multiple quantum well layer 3-1, K group Al y Ga 1-y N superlattice layer 3-2 and m Al z Ga 1-z N monolayer 3-3; the n group Al x Ga 1-x N multiple quantum well layer 3-1, K group Al y Ga 1-y N superlattice layer 3-2 and m Al z Ga 1-z The average Al composition in N monolayers 3–3 decreases.

[0031] The effective barrier thickness of each group of AlxGa1-xN multi-quantum well layers 3-1 is: 10nm-100nm; the total thickness of the n groups of AlxGa1-xN multi-quantum well layers 3-1 is 40-3000nm; The average Al composition of the AlxGa1-xN multiple quantum...

Embodiment 2

[0059] refer to image 3 , the difference between this embodiment and embodiment 1 is that: the multi-quantum well structure composite buffer layer includes: n groups of Al x Ga 1-x N multi-quantum well layer, K group Al y Ga 1-y N superlattice layer. Just canceled Al z Ga 1-z N monolayer, the difference between the growth process and Example 1 is only the Al z Ga 1-z N monolayer replaced by Al with a similar average Al composition z Ga 1-z N MQW layer or Al z Ga 1-z N superlattice layer.

Embodiment 3

[0061] refer to image 3 , the difference between this embodiment and embodiment 1 is that: the multi-quantum well structure composite buffer layer includes: n groups of Al x Ga 1-x N multiple quantum well layer 3-1, m Al z Ga 1-z N single storey 3-3. Just canceled Al y Ga 1-y N superlattice layer, the difference between the growth process and embodiment 1 is only the Al y Ga 1-y The N superlattice layer is replaced by Al with a similar average Al composition z Ga 1-z N multi-quantum well layer or Al with a composition similar to Al z Ga 1-z N single layer.

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Abstract

The present invention provides a high-resistance buffer layer having a multi-quantum well structure composite buffer layer. The high-resistance buffer layer having the multi-quantum well structure composite buffer layer comprises a substrate, a nucleation layer, a multi-quantum well structure composite buffer layer, and a high-resistance buffer layer which are arranged successively from bottom totop. The multi-quantum well structure composite buffer layer further includes: n groups of AlxGa1-xN multi-quantum well layers, and K groups of AlyGa1-yN superlattice layers and / or m AlzGa1-zN singlelayers. The average Al compositions in the n groups of AlxGa1-xN multi-quantum well layer the layer, the K groups of AlyGa1-yN superlattice layer and / or the m AlzGa1-zN single layers are decreased progressively. The invention also provides a method for preparing the high-resistance buffer layer having the multi-quantum well structure composite buffer layer. The preparation method is simple, avoidssecondary epitaxy, causes no pollution to a reaction chamber, is good in controllability, can reduce the buffer layer leakage current, improves the high-voltage characteristics of a device, reduces the useless power consumption of the device, and is suitable for practical production applications.

Description

technical field [0001] The invention relates to an electronic component, in particular to a field effect transistor. Background technique [0002] III-V nitride (gallium nitride, aluminum nitride and its alloy compounds) is an important third-generation semiconductor material with the advantages of large band gap, high thermal conductivity, and high saturation electron drift velocity. Using AlGaN and The gap between GaN and the difference in polarization intensity, the two-dimensional electron gas with high concentration and high electron mobility that can be formed at the AlGaN / GaN heterojunction interface can form a high electron mobility field effect transistor (High Electron Mobility Transistor, HEMT ). GaN-based HEMTs have the advantages of small on-resistance, high switching frequency, and high operating voltage, and have been widely used in power electronic devices and radio frequency microwave devices. [0003] When the HEMT device is working, the leakage of the Ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335H01L29/12
Inventor 房育涛刘波亭李智杰郑元宇刘超张恺玄
Owner XIAMEN SANAN INTEGRATED CIRCUIT