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A Method for Eliminating Photoresponse of Organic Field Effect Transistor

A technology of transistors and organic fields, applied in the field of eliminating the photoresponse of organic field effect transistors, can solve the problem that excitons are not easily separated into free electrons and holes, and achieve the effects of various preparation methods, simple preparation, and convenient processing

Active Publication Date: 2021-06-22
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the exciton binding energy of organic materials is an order of magnitude higher than that of inorganic materials, indicating that excitons are not easily separated into free electrons and holes, which indicates that the electrical properties of organic semiconductor materials are not easily affected by light, which is different from previous experiments. The observed phenomenon is contradictory

Method used

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  • A Method for Eliminating Photoresponse of Organic Field Effect Transistor
  • A Method for Eliminating Photoresponse of Organic Field Effect Transistor
  • A Method for Eliminating Photoresponse of Organic Field Effect Transistor

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Experimental program
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Effect test

Embodiment 1

[0078] In this embodiment, to the silicon dioxide (300nm) / silicon substrate with insulating layer and gate electrode, the dielectric layer modification material selected is OTS (contrast modification layer) and PS, PMMA, CYTOP (thickness is in the range of 20-500nm) ), the semiconductor is based on 2,6-diphenylanthracene (DPA for short) film (comparative test).

[0079] Step 1: Cleaning of the substrate with the gate electrode

[0080] For organic field effect transistors, the silicon oxide / silicon substrate with a surface oxide layer (thickness 300nm) is washed with deionized water, concentrated sulfuric acid: hydrogen peroxide (7:3), deionized water, isopropyl After ultrasonic cleaning with alcohol, dry with nitrogen gas.

[0081] For organic light-emitting diodes, commercially purchased ITO glass (with an oxide layer of 150 nm) was washed with deionized water, acetone, and isopropanol in sequence, and then blown dry with nitrogen.

[0082] Step 2: Preparation and processi...

Embodiment 2

[0098] In this embodiment, to the silicon dioxide (300nm) / silicon substrate with insulating layer and gate electrode, the polymer film layer material selected is OTS (contrast modification layer) and PS, PMMA, CYTOP (thickness is in the range of 20-500nm) ), the active semiconductor layer is based on 2,6-diphenylanthracene single crystal (thickness in the range of 20-100 nm).

[0099] Step 1: Cleaning of the substrate with the gate electrode

[0100] For organic field effect transistors, the silicon oxide / silicon substrate with a surface oxide layer (thickness 300nm) is washed with deionized water, concentrated sulfuric acid: hydrogen peroxide (7:3), deionized water, isopropyl After ultrasonic cleaning with alcohol, dry with nitrogen gas.

[0101] Step 2: Preparation and processing of polymer insulating layer

[0102] On the surface of the cleaned substrate in the first step, vacuum heat at 90°C, keep it for 90min, cool to room temperature, drop a drop of OTS in the petri di...

Embodiment 3

[0116] The method adopted in this embodiment is the same as that in Embodiment 2, and the material of the active semiconductor layer used is copper perfluorophthalocyanine with a thickness of 40-60 nm.

[0117] Figure 7 Demonstrated perfluorophthalocyanine copper single crystal transistors on different substrates in dark state and 0.6mW cm -2 The transfer curve under light intensity shows that the photoresponse of the device is effectively eliminated on the polymer insulating layer.

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Abstract

The invention discloses a method for eliminating the photoresponse of organic field effect transistors. The method includes the following steps: 1) selecting an insulating layer modification material with low defect density; wherein, the modification material is a widely used low-cost polymer insulating layer material; 2) processing the substrate in step 1), Grow or transfer crystals of high crystalline quality to prepare transistor devices. The invention prepares a device structure for eliminating the photoresponse of the organic field effect transistor, and can also be used for preparing organic functional devices such as field effect transistor-driven organic light-emitting diodes, active matrix light-emitting diode arrays, and organic logic circuits, as well as being applied to large-scale integration in the circuit.

Description

technical field [0001] The invention belongs to the field of semiconductors and relates to a method for eliminating the photoresponse of an organic field effect transistor. Background technique [0002] The photoresponse characteristics of field effect transistors are considered to be the expression of the intrinsic properties of semiconductor materials, and in transistor-driven organic display circuits, the threshold voltage shift and output current change of field effect transistors caused by this photoresponse will directly Affects the brightness of LEDs. In the current industrialized transistor-driven organic display circuits, especially when transistors and diodes are connected in overlapping space, it is generally necessary to introduce electrode materials with a thickness of about 100 nm as a light-shielding layer to avoid the mutual influence of diodes and transistors. [0003] After more than 30 years of development, organic field effect transistors have been signi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/10H01L51/30H01L51/40
CPCH10K71/00H10K10/46H10K10/468H10K10/80
Inventor 江浪江龙峰刘洁
Owner INST OF CHEM CHINESE ACAD OF SCI