Photoresist and method of forming photolithographic pattern

A technology of photoresist and positive photoresist, which is applied in the field of photoresist and can solve the problems of low resolution and sensitivity of photoresist

Inactive Publication Date: 2020-04-24
CHANGZHOU TRONLY ADVANCED ELECTRONICS MATERIALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to provide a photoresist and a method for forming a photoresist pattern,

Method used

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  • Photoresist and method of forming photolithographic pattern
  • Photoresist and method of forming photolithographic pattern
  • Photoresist and method of forming photolithographic pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0038] According to a typical embodiment of the present invention, a photoresist is provided. Photoresists contain the following components:

[0039] (A) 5-85 parts by mass of resin;

[0040] (B) 0.01 to 20 parts by mass of a photoacid generator;

[0041] (C) 0.005 to 10 parts by mass of additives;

[0042] (D) the solvent of 20~90 mass parts;

[0043] Wherein, the photoacid generator has a structure as shown in general formula (I):

[0044]

[0045] In the compound structure of the above general formula (I):

[0046] (1)R 0 and R 1 represent hydrogen independently of each other, or i.e. R 0 can represent the R 7 ,R 8 ,R 9 ,R 10 ,R 11 Substituted aryl, R 1 can represent the R 12 ,R 13 ,R 14 ,R 15 ,R 16 Substituted aryl (as shown in the general formula (I), and then form a methyl or different substituted benzyl sulfonium salt structure), wherein R 7 ,R 8 ,R 9 ,R 10 ,R 11 ,R 12 ,R 13 ,R 14 ,R 15 ,R 16 Independently represent hydrogen, halogen a...

Embodiment 1

[0127] Preparation of phenolic resin:

[0128] According to the ratio shown in Table 1, m-cresol (99wt%), p-cresol (99wt%), 3,5-xylenol (99wt%), and dihydrate oxalic acid were added to the , heating mantle, nitrogen-protected reactor, first add 20wt% of the formalin solution (36.9wt%) of the amount shown in Table 1, and be heated to 60°C under the condition of nitrogen, and now the exothermic reaction begins . When the reaction temperature was raised to about 100°C, the remaining formalin solution was gradually added within 30 minutes, and then continued to react at reflux temperature for 4 hours to generate polycondensate. Under the protection of atmospheric nitrogen, the volatile components such as formaldehyde and water were distilled off. When the temperature of the polycondensate was raised to 210°C, the unreacted monomer was removed by vacuum distillation under reduced pressure until the temperature reached 228°C and the vacuum degree reached 7 mmHg. Pour the polycond...

Embodiment 2

[0132]Acrylic resin preparation:

[0133] According to the ratio shown in Table 2, 0.5 mol of A-1, 0.15 mol of B-1, 0.2 mol of C-1 and 0.005 mol of 2,2'-azobis(isobutyric acid) dimethyl Dissolve in 80 g of methyl ethyl ketone, and react under nitrogen atmosphere at 80° C. for 2 hours with stirring. After the reaction, cool to room temperature, then add the polymerization solution dropwise into 400g of n-hexane, filter after precipitation, wash with a mixed solvent of methyl ethyl ketone and n-hexane three times, and dry in vacuum at 50°C for 20 hours to obtain a white The powder solid polymer compound is acrylic resin-1. Acrylic resin 2-4 was obtained by the same preparation method.

[0134] Table 2 Acrylic resin formula

[0135]

[0136]

[0137] In the above table 2, the structural formula of each unit is as follows in table 3:

[0138] Table 3 Structure of each unit in Table 2

[0139]

[0140]

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Abstract

The invention discloses a photoresist and a method for forming a photoetching pattern. The photoresist comprises the following components: resin, a photoacid generator, an additive and a solvent, wherein the photoacid generator is a sulfonium salt compound taking stilbene as a conjugated structure. The photoresist disclosed by the invention has very high chemical stability and can be stored for along time under the condition of dark room temperature. A large two-photon absorption cross section is formed from an ultraviolet region to a visible light region, so that the photoetching effect is good. The exposure threshold value is very low, and the processing resolution is high.

Description

technical field [0001] The present invention relates to the technical field of photoresists, in particular, to a photoresist and a method for forming a photoresist pattern. Background technique [0002] With the research and development of high-integration, ultra-high-speed, and ultra-high-frequency integrated circuits and devices, the feature size of large-scale integrated circuits and ultra-large-scale integrated circuits is becoming smaller and smaller, and the processing size enters deep submicron, hundreds of nanometers or even nanometers. In the field of microelectronics technology, micro-lithography technology is the highest precision processing technology that humans can achieve so far. However, the further development of integrated circuits requires the support of corresponding exposure technology. Photoresist technology is an important part of exposure technology. A high-performance exposure tool needs a matching high-performance photoresist to truly obtain high-re...

Claims

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Application Information

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IPC IPC(8): G03F7/004
CPCG03F7/004
Inventor 钱晓春胡春青马丽君
Owner CHANGZHOU TRONLY ADVANCED ELECTRONICS MATERIALS CO LTD
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