Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ideal Dirac semimetal Cu2HgSnSe4 crystal and growth method and application thereof

A growth method and technology for crystal growth, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of impossible to talk about, no further progress of topological quantum materials, etc., to achieve easy operation, large crystal size, cost low effect

Active Publication Date: 2020-05-08
NANJING UNIV
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If there is no further progress in the transport research of topological quantum materials, the corresponding device research will also be out of the question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ideal Dirac semimetal Cu2HgSnSe4 crystal and growth method and application thereof
  • Ideal Dirac semimetal Cu2HgSnSe4 crystal and growth method and application thereof
  • Ideal Dirac semimetal Cu2HgSnSe4 crystal and growth method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Embodiment 1, transport agent is I 2 Cu 2 HgSnSe 4 Powder as raw material to grow Cu 2 HgSnSe 4 the crystal

[0048] Weigh 0.02mol of Cu 2 Se powder (4.1212g), 0.02mol of HgSe powder (5.591g), 0.02mol of Sn powder (2.3742g), and 0.04mol of Se powder (3.1584g) were mixed uniformly and loaded into a prepared quartz tube. It is sealed under the vacuum state of mechanical pump and molecular pump, and the high-temperature solid-state sintering reaction is carried out at 900 ° C for 5 days to prepare Cu 2 HgSnSe 4 powder as a growth material. Then weigh about 1g of Cu 2 HgSnSe 4 Powder with 100 mg of Delivery Agent I 2 (Concentration is 5mg / cm 3 ), and the two were ground and mixed evenly and packed into a prepared quartz tube (length 10cm, diameter 2cm). After the quartz tube is sealed, it is placed in a tube furnace with two temperature zones, and the growth temperature program is set to 400°C (growth end) ~ 500°C (raw material end). After a 10-day growth cycle,...

Embodiment 2

[0050] Embodiment 2, adopt gradient cooling method with Cu 2 HgSnSe 4 Powder as raw material to grow Cu 2 HgSnSe 4 the crystal

[0051] Weigh 0.02mol of Cu 2 Se powder (4.1212g), 0.02mol of HgSe powder (5.591g), 0.02mol of Sn powder (2.3742g), and 0.04mol of Se powder (3.1584g) were mixed evenly and loaded into a prepared quartz tube, It is sealed under the vacuum state of mechanical pump and molecular pump, and the high-temperature solid-state sintering reaction is carried out at 900 ° C for 5 days to prepare Cu 2 HgSnSe 4 powder as a growth material. Then weigh about 10 g of Cu 2 HgSnSe 4 The powder is loaded into a pre-prepared quartz tube (length 10cm, diameter 2cm, conical head). After the quartz tube is sealed, place it in a vertical tube furnace with two temperature zones. Set the temperature program to start at 950°C. After holding for 12 hours, cool down to 500°C at a rate of 10°C / h, and then cool down at a rate of 2°C / h. to 300°C, and finally cool down natu...

Embodiment 3

[0053] Example 3, Cu 2 HgSnSe 4 Energy Band Calculation of Dirac Semimetal Properties in Crystals

[0054] By first principles, we calculated the Cu prepared in Examples 1 and 2 2 HgSnSe 4 The energy band structure of the crystal, the result is as follows figure 1 As shown, its conduction band and valence band are asymmetric, and only Dirac fermions exist in the conduction band, while Schrödinger fermions and Dirac fermions coexist in the valence band. If the Fermi energy is located in the conduction band, the transport properties mainly come from Dirac fermions. Such a system will help us to obtain relatively clean transport experimental data, so that we can explore novel transport properties of topological quantum states. At the same time, the linear dispersion relationship of electrons near the Dirac point is maintained in the energy range of about 400mV, and the Dirac cone band structure of linear dispersion has a nonlinear response to light waves in a wide range of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ideal Dirac semimetal Cu2HgSnSe4 crystal. The Cu2HgSnSe4 crystal is characterized in that the Cu2HgSnSe4 crystal belongs to a tetragonal system; the space group of the crystal is (No. 121); and a conduction band and a valence band of the Cu2HgSnSe4 crystal are asymmetric in an energy band structure diagram, only Dirac fermion exists in the conduction band, and Schrodinger fermion and the Dirac fermion coexist in the valence band. If Fermi energy is located in the conduction band, transport properties are mainly derived from the Dirac fermion. Such a system is helpfulfor people to obtain relatively clean transportation experiment data, so the novel transportation property of a topological quantum state can be explored. Meanwhile, the linear dispersion relation ofelectrons near a Dirac point is always kept within the energy range of about 400 mV, and a Dirac cone energy band structure of linear dispersion has large-range frequency nonlinear response to lightwaves. The crystal has important academic value and potential application prospect.

Description

technical field [0001] The invention belongs to the technical field of new materials and crystal growth, in particular to an ideal Dirac semimetal Cu 2 HgSnSe 4 Crystals and their growth methods and applications. Background technique [0002] In the past ten years, a major breakthrough in condensed matter physics has been to introduce the mathematical topology principle into the basic theory of physics, and to construct the theory of topological phase transition and topological phase of matter. The study of the topological properties of matter has become an important direction in the research of condensed matter physics and materials science. From this, a brand new concept-topological quantum material is derived. Due to the unique topological properties of the electronic structure, topological quantum materials can exhibit various quantum effects at the macro scale, so they have been widely concerned and studied by many researchers. Since the discovery of two-dimensional...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B29/46C30B25/00C30B11/00
CPCC30B29/46C30B25/00C30B11/00
Inventor 吕洋洋曹琳陈延彬张海军陈延峰
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com