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A kind of preparation method of high-efficiency IBC battery

A battery and high-efficiency technology, applied in the field of solar cells, can solve the problems of unguaranteed A-grade product rate, increased production cost, cumbersome production process, etc., and achieves excellent surface flatness, improved tightness, and good corrosion effect.

Active Publication Date: 2022-02-08
北京天拓新能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the production process of IBC batteries is cumbersome, with more than 20 steps in the production process, and photolithography mask technology is required to form discrete pn junctions, which leads to a significant increase in production costs. There is no guarantee, and it has obvious disadvantages in the competition with other high-efficiency batteries

Method used

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  • A kind of preparation method of high-efficiency IBC battery
  • A kind of preparation method of high-efficiency IBC battery

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Experimental program
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Effect test

Embodiment 1

[0030] A preparation method of high-efficiency IBC battery, comprising the following steps:

[0031] a. A 2 μm pyramid is formed on the surface of the n-type silicon wafer after texturing, and one side is polished with lye, the concentration of lye is 25wt%, and the polishing temperature is 70°C;

[0032] b. Boron diffusion is performed on both sides of the polished silicon wafer. After boron diffusion, the surface resistance of the silicon wafer is 110Ω / sq, and the surface concentration of boron is 1e19cm -3 , the junction depth of the pn junction is 1.5 μm, a silicon nitride film is grown on the polished surface, the thickness of the silicon nitride film is 120 nm, and the refractive index is 2.7;

[0033] c. Laser removal of borosilicate glass and silicon nitride film on the polished surface, with a line width of 150 μm;

[0034] d. After the silicon nitride film is removed by laser, the silicon wafer is etched in lye and auxiliaries, the volume ratio of auxiliaries and ly...

Embodiment 2

[0042] A preparation method of high-efficiency IBC battery, comprising the following steps:

[0043] a. A 1 μm pyramid is formed on the surface of the n-type silicon wafer after texturing, and one-sided polishing is performed with lye, the concentration of lye is 5wt%, and the polishing temperature is 60°C;

[0044] b. Boron diffusion is performed on both sides of the polished silicon wafer. After boron diffusion, the surface resistance of the silicon wafer is 80Ω / sq, and the surface concentration of boron is 1e19cm -3 , the junction depth of the pn junction is 500nm, a silicon nitride film is grown on the polished surface, the thickness of the silicon nitride film is 60nm, and the refractive index is 1.8;

[0045] c. Laser removal of borosilicate glass and silicon nitride film on the polished surface, with a line width of 100 μm;

[0046] d. After the silicon nitride film is removed by laser, the silicon wafer is etched in lye and auxiliaries, the volume ratio of auxiliaries...

Embodiment 3

[0054] A preparation method of high-efficiency IBC battery, comprising the following steps:

[0055] a. After the n-type silicon wafer is textured, a 3 μm pyramid is formed on the surface, and one side is polished with lye, the concentration of lye is 35wt%, and the polishing temperature is 80°C;

[0056] b. Boron diffusion is performed on both sides of the polished silicon wafer. After boron diffusion, the surface resistance of the silicon wafer is 130Ω / sq, and the surface concentration of boron is 1e19cm -3 , the junction depth of the pn junction is 1.5 μm, a silicon nitride film is grown on the polished surface, the thickness of the silicon nitride film is 140 nm, and the refractive index is 3.1;

[0057] c. Laser removal of borosilicate glass and silicon nitride film on the polished surface, with a line width of 250 μm;

[0058] d. After the silicon nitride film is removed by laser, the silicon wafer is etched in lye and auxiliaries, the volume ratio of auxiliaries and ly...

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Abstract

The invention belongs to the technical field of solar cells. A preparation method of a high-efficiency IBC battery includes the following steps: after n-type silicon wafer is textured, one-sided polishing is performed with lye, and then double-sided boron diffusion is performed, and a silicon nitride film is grown on the polished surface; the borosilicate glass on the polished surface is removed by laser After the silicon nitride film is etched, the silicon wafer is etched in lye and additives; after cleaning, it is wet-oxidized in an ozone aqueous solution; after ion implantation on the polished surface, it is annealed; after the silicon wafer is cleaned with hydrofluoric acid, it is wetted with nitric acid. method oxidation; silicon wafer after wet oxidation, double-sided growth of aluminum oxide and silicon nitride film, screen printing on the back of the silicon wafer, p-type area using silver paste, n-type area using ablative aluminum paste, After sintering, the IBC battery is obtained. The IBC battery prepared by the invention has high efficiency and excellent electrical performance, significantly reduces the preparation steps of the IBC battery, reduces the production cost of the IBC battery, and improves the market competitiveness of the product.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a preparation method of a high-efficiency IBC cell. Background technique [0002] With the rapid consumption of fossil energy, solar energy, as a renewable energy, is one of the energy sources that human beings mainly rely on in the future. As a typical representative of clean energy, solar cells have attracted more and more attention from all over the world, and the global installation volume is also increasing year by year. In recent years, with the rapid development of solar battery technology, the cost of batteries has dropped rapidly, and the cost of electricity has gradually approached the cost of thermal power generation. The goal of the photovoltaic industry is still to continuously improve battery efficiency, reduce the cost of electricity, and reach a level that can directly compete with thermal power. [0003] N-type silicon solar cells are the trend of future batt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/1804Y02E10/547Y02P70/50
Inventor 崔红星张新鹏李侠李大伟张鹏伟杨少华
Owner 北京天拓新能科技有限公司
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