4N bonding gold wire capable of being processed to phi 6 micrometers through wire drawing and preparation method of 4N bonding gold wire

A bonding wire and wire drawing processing technology, applied in the field of 4N bonding wire and its preparation, can solve the problem of reducing the size of the pad, and achieve the effect of eliminating lateral grain boundaries, good low long radian, and high continuous columnar crystal structure

Active Publication Date: 2020-06-09
上杭县紫金佳博电子新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, with the miniaturization of the chip, the size of the pad on the chip will be relatively reduced

Method used

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  • 4N bonding gold wire capable of being processed to phi 6 micrometers through wire drawing and preparation method of 4N bonding gold wire
  • 4N bonding gold wire capable of being processed to phi 6 micrometers through wire drawing and preparation method of 4N bonding gold wire
  • 4N bonding gold wire capable of being processed to phi 6 micrometers through wire drawing and preparation method of 4N bonding gold wire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A 4N bonding alloy wire that can be drawn to a diameter of 6 microns, comprising the following components: gold: 99.99wt%, copper: 0.0010wt%, vanadium: 0.0008wt%, magnesium 0.0008wt%, palladium: 0.0010wt%, silver: 0.0010wt%, Nickel: 0.0007wt%, Bismuth: 0.0007wt%, Beryllium: 0.0005wt%, Cerium: 0.0005wt%, Zinc: 0.0005wt%, Yttrium: 0.0005wt%, Calcium: 0.0005wt%, Gadolinium: 0.0005wt% %, Aluminum: 0.0005wt%, Lead: 0.0005wt%.

[0030] The above-mentioned preparation method of the 4N bonding alloy wire that can be drawn and processed to φ6 microns comprises the following steps:

[0031] (1) Under an inert gas atmosphere, put the bulk 5N gold raw material and alloy additives into an electric arc furnace for heating and melting to obtain a gold melt, the heating temperature is 1100 ° C, and the addition amount of the alloy additives is ≤ 90ppm;

[0032] (2) Continuous casting: using continuous casting equipment, the gold melt obtained in step (1) is continuously cast to obtain...

Embodiment 2

[0042]A 4N bonding alloy wire that can be drawn to a diameter of 6 microns, comprising the following components, gold: 99.995wt%, copper: 0.0005wt%, vanadium: 0.0004wt%, magnesium 0.0004wt%, palladium: 0.0005wt%, silver: 0.0005wt%, Nickel: 0.0004wt%, Bismuth: 0.0004wt%, Beryllium: 0.0003wt%, Cerium: 0.0003wt%, Zinc: 0.0003wt%, Yttrium: 0.0002wt%, Calcium: 0.0002wt%, Gadolinium: 0.0002wt% %, Aluminum: 0.0002wt%, Lead: 0.0002wt%.

[0043] The above-mentioned preparation method of the 4N bonding alloy wire that can be drawn and processed to φ6 microns comprises the following steps:

[0044] (1) In an inert gas atmosphere, put the bulk 5N gold raw material and alloy additives into an electric arc furnace for heating and melting to obtain a gold melt, the heating temperature is 1200 ° C, and the addition amount of the alloy additives is ≤ 90ppm;

[0045] (2) Continuous casting: using continuous casting equipment, the gold melt obtained in step (1) is continuously cast to obtain a ...

Embodiment 3

[0055] A 4N bonding alloy wire that can be drawn to φ6 microns is characterized in that it includes the following components: gold: 99.9985wt%, copper: 0.0004wt%, vanadium: 0.0003wt%, magnesium 0.0001wt%, palladium: 0.0001wt% %, Silver: 0.0001wt%, Nickel: 0.00008wt%, Bismuth: 0.00008wt%, Beryllium: 0.00006wt%, Cerium: 0.00006wt%, Zinc: 0.00005wt%, Yttrium: 0.00005wt%, Calcium: 0.00004wt%, Gadolinium: 0.00004wt%, Aluminum: 0.00002wt%, Lead 0.00002wt%.

[0056] The above-mentioned preparation method of the 4N bonding alloy wire that can be drawn and processed to φ6 microns comprises the following steps:

[0057] (1) In an inert gas atmosphere, put the bulk 5N gold raw materials and alloy additives into an electric arc furnace for heating and melting to obtain a gold melt, the heating temperature is 1300 ° C, and the addition amount of the alloy additives is ≤ 90ppm;

[0058] (2) Continuous casting: using continuous casting equipment, the gold melt obtained in step (1) is contin...

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Abstract

The invention belongs to the technical field of bonding gold wire processing, in particular to a 4N bonding gold wire capable of being processed to phi 6 micrometers through wire drawing and a preparation method of the 4N bonding gold wire. The 4N bonding gold wire comprises gold and an alloy additive. The alloy additive is formed by copper, vanadium, magnesium, palladium, silver, nickel, bismuth,beryllium, cerium, zinc, yttrium, calcium, gadolinium, aluminum and lead. According to the prepared bonding gold wire, the alloy additive of the specific components and content is added, the drawingstrength of the gold wire can be improved through the alloy additive, and the radian of the bonding gold wire can be reduced; the prepared bonding gold wire has the good low and long radian through adding of the additive and the reasonable proportion while guaranteeing high strength; the prepared gold wire has good drawing strength, heat conductivity, resistance and low and long arc length; and meanwhile, axial long crystals are formed after a single-crystal continuous casting method is adopted for casting, high purity and a continuous columnar crystal structure are achieved, a transverse crystal boundary is eliminated, casting defects are avoided, and the prepared gold wire can be processed to 6 micrometers.

Description

technical field [0001] The invention belongs to the technical field of bonding wire processing, and in particular relates to a 4N bonding wire that can be drawn and processed to a diameter of 6 microns and a preparation method thereof. Background technique [0002] Bonding is an important step in the production of integrated circuits. It is the operation of connecting the circuit chip and the lead frame. The bonding wire is the connection between the input / output bonding point of the circuit in the chip and the lead frame when the semiconductor device and the integrated circuit are assembled. The fine metal wire inner lead used to realize the electrical connection between the inner contacts, the quality of the bonding effect directly affects the performance of the integrated circuit. [0003] For general bonding wires, the drawability of wire drawing is basically acceptable, but at present, the bonding wires that can be mass-produced at home and abroad are as thin as φ13 mic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C5/02C22F1/14C30B29/52C30B29/62C30B11/00B21C1/02
CPCB21C1/003B21C1/02C22C5/02C22F1/14C30B11/001C30B29/52C30B29/62
Inventor 周刚范传勇张知行
Owner 上杭县紫金佳博电子新材料科技有限公司
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