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Basket mark prevention texturing solution for HIT battery and texturing method of basket mark prevention texturing solution

A technology of texturing liquid and flower baskets, which is applied in the manufacture of circuits, electrical components, and final products. It can solve problems such as black line marks, burning risks, and environmental pollution, so as to improve service life, shorten texturing time, and improve texturing. The effect of velvet effect

Active Publication Date: 2020-06-23
湖州飞鹿新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its disadvantages are: the addition of isopropanol will cause environmental pollution and combustion risks, and the texturing time is long, which needs to reach 1200-1800s, and flower basket marks, bubble columns, black line marks, white spots, etc. often appear on the surface of the silicon wafer during the texturing process Unfavorable anomalies such as light raindrops require a long period of exploration to get the best results

Method used

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  • Basket mark prevention texturing solution for HIT battery and texturing method of basket mark prevention texturing solution
  • Basket mark prevention texturing solution for HIT battery and texturing method of basket mark prevention texturing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] An anti-scratch printing liquid for HIT batteries, said texturing liquid includes 0.1-5% anti-scratch printing additive and 0.1% sodium acetate, and the balance is 5wt% tetramethyl ammonium hydroxide aqueous solution;

[0048] Wherein: the anti-scratch printing additives include 0.05% sodium carboxymethyl humate, 0.01% polyoxypropylene oxide glyceryl ether, 0.2% carboxymethyl cellulose, The balance of 0.5% of the protective agent is water.

[0049] The preparation method of the sodium carboxymethyl humate in the described anti-staggered printing velvet additive is as follows:

[0050] (1) Purification of humic acid: crush and grind humic acid, soak in dilute hydrochloric acid, stir for 0.5h, filter to get filter residue, wash with deionized water and dry to obtain purified humic acid;

[0051] (2) Carboxymethylation: Mix the purified humic acid with 10 times the mass of 10mol / L sodium hydroxide aqueous solution and place it in a three-necked flask. After reflux for 1 ...

Embodiment 2

[0058] A kind of anti-scratch printing liquid for HIT battery, described texturing liquid comprises anti-scratch printing velvet additive 5%, the mixture 0.5% of potassium tetraborate and borax 1: 1, ammonium acetate 0.8% by weight percentage % surplus is the cesium hydroxide aqueous solution that concentration is 0.2wt%;

[0059] Wherein: the described anti-staggered printing additives include sodium carboxymethyl humate, 0.5% lauryl phenylacetate, 1% poloxamer, 2% sodium carboxymethyl humate accounting for 3% of the overall texture additive mass. The balance of the protective agent is water.

[0060] The preparation method of the sodium carboxymethyl humate in the described anti-staggered printing velvet additive is as follows:

[0061] (1) Purification of humic acid: crush and grind humic acid, soak in dilute hydrochloric acid, stir for 3 hours, filter to get filter residue, wash with deionized water and dry to obtain purified humic acid;

[0062] (2) Carboxymethylation: ...

Embodiment 3

[0069] An anti-staggered texturing liquid for HIT batteries, said texturing liquid includes 0.1-5% anti-stirring additive, 0.25% mixture of potassium tetraborate and borax 1:3, acetic acid Sodium and ammonium acetate 1: 1 mixture 0.5% surplus is the sodium hydroxide aqueous solution that concentration is 1.8wt%;

[0070] Wherein: the described anti-staggered printing additives include 0.2% sodium carboxymethyl humate, 0.25% phenylethyl alcohol oleate, 0.8% PEG-40 hydrogenated castor oil and hydrogenated Castor oil polyoxyethylene ether 1:1 mixture, 1.5% of the protective agent and the balance of water.

[0071] The preparation method of the sodium carboxymethyl humate in the described anti-staggered printing velvet additive is as follows:

[0072] (1) Purification of humic acid: crush and grind humic acid and soak in dilute hydrochloric acid, stir for 2 hours, filter to get filter residue, wash with deionized water and dry to obtain purified humic acid;

[0073] (2) Carboxym...

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Abstract

The invention relates to the field of monocrystalline silicon surface treatment, and particularly relates to a basket mark prevention texturing solution for an HIT battery and a texturing method of the basket mark prevention texturing solution. The texturing solution comprises the following components in percentage by weight: 0.1-5% of a basket mark prevention texturing additive, 0-0.5% of an auxiliary texturing agent, 0.1-0.8% of a pH buffer agent and the balance of alkali liquor. The texturing solution is suitable for the texturing process of the HIT battery, the defects that the productioncapacity is low, a large amount of isopropanol needs to be used, the phenomena of poor appearance such as basket marks are easy to occur in the existing HIT texturing technology are overcome, so thatthe texturing solution has the advantage of preventing the adverse phenomena of basket marks, bubble columns and the like during silicon wafer texturing. Meanwhile, the size of the textured pyramid reaches 5-12 microns, on the premise that the large pyramid is maintained, the texturing time of the silicon wafer is effectively shortened, and the production capacity of a single tank is improved. Inaddition, the texturing solution has the advantages that the weight of the silicon wafer is reduced, the alkali consumption is reduced and the service life of the texturing solution is prolonged during texturing.

Description

technical field [0001] The invention relates to the field of single crystal silicon surface treatment, in particular to an anti-staggered texturing liquid for HIT batteries and a texturing method thereof. Background technique [0002] In the manufacturing process of solar cells, in order to improve the absorption of sunlight and reduce the reflectivity of the surface of the silicon wafer, it is necessary to texture the silicon wafer first, so as to create a pyramid structure on the surface of the silicon wafer, so that the sunlight is reflected on the surface of the silicon wafer. Multiple reflections and refractions are performed, ultimately resulting in higher solar cell efficiencies. [0003] HIT solar cells are generally N-type silicon wafers, which have the characteristics of high open circuit voltage and high conversion efficiency. The application prospects are very broad, and it is one of the main directions for future battery development. Solar cells HIT cells are c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L31/18
CPCH01L31/1804H01L21/30608Y02P70/50
Inventor 吴春勇斯小阳姚伟明夏庆华
Owner 湖州飞鹿新能源科技有限公司
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