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Method for preparing perovskite solar cell based on ion exchange

A solar cell and ion exchange technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inability to change the ionic composition of perovskite thin films, inability to conduct large-area, large-scale production, and difficult to control the film formation process, etc. Achieve the effect of convenient control, reduced production cost, and wide film-forming process window

Active Publication Date: 2020-09-18
CHANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the preparation of perovskite films with different ionic structures usually adopts the solution spin coating method based on the principle of ion addition reaction, analyzes the ionic structure of the perovskite film, and accurately prepares the perovskite precursor solution according to its ionic composition, which is cumbersome. , and the ionic composition of the perovskite film cannot be changed during the reaction. At the same time, the nucleation and crystal growth of the perovskite occur within a few seconds during spin coating, and it is difficult to control the film formation process. The grown film is rough and porous, with low repeatability. Unable to carry out large-scale, large-scale production
Therefore, a dual-source vapor deposition method has emerged in recent years. Compared with the solution spin coating method, when the perovskite film is prepared by dual-source vapor deposition, chemical vapor deposition (CVD) and other vapor phase methods, the thickness is still uncontrollable, and due to the source ( target) to the substrate is relatively large, requiring a large amount of deposition raw materials and load gases, such as N 2 , Ar, etc., high production cost

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  • Method for preparing perovskite solar cell based on ion exchange

Examples

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Comparison scheme
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Embodiment 1

[0038] Example 1: A method for preparing perovskite solar cells based on ion exchange

[0039] Including the following steps:

[0040] S1. Electron transport layer preparation: Deposit the electron transport layer material TiO on the FTO conductive glass substrate by evaporation method 2 , the thickness of the electron transport layer is 20nm, and then the electron transport layer is obtained by ultraviolet ozone treatment;

[0041] S2. Preparation of perovskite light absorbing layer: 1Mmol of PbBr 2 Dissolve in 1mL of DMF and TMSO in a volume ratio of 9:1 to form PbBr 2 solution, which is coated on the electron transport layer, and subjected to the first annealing treatment, the annealing temperature is 60 ° C, and the PbBr 2 layer; then PbBr 2 The layer is placed in a closed chamber with 100mg of MAI organic salt, the pressure of the chamber is 10pa, and the MAI organic salt is heated at a heating temperature of 70°C to sublimate MAI to PbBr 2 layer reaction to form per...

Embodiment 2

[0044] Example 2: A method for preparing perovskite solar cells based on ion exchange

[0045] Including the following steps:

[0046] S1. Electron transport layer preparation: Deposit the electron transport layer material TiO on the FTO conductive glass substrate by evaporation method 2 , the thickness of the electron transport layer is 20nm, and then the electron transport layer is obtained by ultraviolet ozone treatment;

[0047] S2. Preparation of perovskite light absorbing layer: 1Mmol of PbBr 2 Dissolve in 1mL of DMF and TMSO in a volume ratio of 9:1 to form PbBr 2 solution, which is coated on the electron transport layer, and subjected to the first annealing treatment, the annealing temperature is 60 ° C, and the PbBr 2 layer; then PbBr 2 The layer is placed in a closed chamber with 100 mg of MAI organic salt, the pressure of the chamber is 10pa, the MAI organic salt is heated at a heating temperature of 90°C, and the MAI is sublimated to PbBr 2 The perovskite crys...

Embodiment 3

[0050] Example 3: A method for preparing perovskite solar cells based on ion exchange

[0051] The operation steps are as follows:

[0052] S1. Electron transport layer preparation: The electron transport layer material SnO was deposited on the FTO conductive glass substrate by evaporation method 2 , the thickness of the electron transport layer is 35nm, and then the electron transport layer is obtained by ultraviolet ozone treatment;

[0053] S2. Preparation of perovskite light absorbing layer: 1Mmol of PbCl 2 Dissolve in 1mL of DMF and TMSO in a volume ratio of 9:1 to form PbCl 2 solution, which is coated on the electron transport layer and subjected to the first annealing treatment, the annealing temperature is 70°C, and the PbCl 2 layer; then the PbCl 2 The layer is placed in a closed chamber with 100mg of FAI organic salt, the pressure of the chamber is 10pa, and the FAI organic salt is heated at a heating temperature of 110°C to sublimate the FAI to PbCl 2 layer rea...

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Abstract

The invention belongs to the field of perovskite solar cells, and particularly relates to a method for preparing a perovskite solar cell based on ion exchange. The main points of the technical schemeof the invention are that the method comprises the following steps: S1, preparing an electron transport layer; S2, preparing a perovskite light absorption layer: coating the electron transport layer with a lead source solution, and carrying out first annealing treatment to form an iodine-free lead layer, performing vacuum heating to sublimate the organic salt, performing addition reaction and ionexchange reaction with the iodine-free lead layer to form a perovskite crystal, monitoring perovskite crystal components in situ in the reaction, and performing secondary annealing to obtain a perovskite light absorption layer after the perovskite crystal is obtained; S3, preparing a hole transport layer; S4, preparing a metal counter electrode. The perovskite solar cell provided by the inventionis prepared by adopting industrial processes of an evaporation method, a coating combined closed space sublimation method, a spraying method and the evaporation method, solution spin coating is omitted, the thickness of each layer is controllable, and large-scale production can be realized.

Description

technical field [0001] The invention belongs to the field of perovskite solar cells, in particular to a method for preparing perovskite solar cells based on ion exchange. Background technique [0002] The decisive factor for the performance of perovskite solar cells is ABX 3 The structural composition of the perovskite light-absorbing layer, in which A is generally methylamine ion (MA + ), formamidine ion (FA + ), K + 、Na + 、Rn + and Cs + , B is a divalent metal ion (such as Pb 2+ 、 Ge 2+ and Sn 2+ etc.), X is a halide ion (such as Cl - 、Br - , and I - Wait). The performance and service conditions of perovskite films with different ionic structures are different, and the common ones have MAPbI 3 , FAPbI 3 Isostructured perovskite films are generally used in high-efficiency perovskite solar cells; MAPbBr x Cl (3-x) (x=0~3), FAPbBr x Cl (3-x) (x=0~3) and other structures of perovskite films are used for tandem solar cells; CsPbI 3 Structured perovskite thin ...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/164H10K71/40H10K30/10Y02E10/549
Inventor 丁建宁顾磊磊袁宁一王书博房香
Owner CHANGZHOU UNIV