Device structure of cadmium zinc telluride detector and preparation process thereof
A preparation process and device structure technology, applied in the field of semiconductor detection, can solve the problems of low energy resolution, asymmetric photoelectric peak, and incomplete charge collection, etc., and achieve the effect of high signal-to-noise ratio and small leakage current
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preparation example Construction
[0085] A kind of preparation technology of cadmium zinc telluride detector,
[0086] The preparation process is carried out for a composite crystal made of CZT and Si, electrodes arranged at both ends of the composite crystal, and a detector formed of a Frisch gate arranged on the side wall of the composite crystal, specifically comprising the following steps (such as figure 2 shown):
[0087] S1: wafer pretreatment;
[0088] S2: CdZnTe surface treatment;
[0089] S3: Low-temperature bonding of single crystal silicon and cadmium zinc telluride;
[0090] S4: Electrode preparation is performed on the bonded composite crystal;
[0091] S5: passivating the surface of the composite crystal after the electrode is prepared;
[0092] S6: Preparing the Frisch gate on the passivated composite crystal.
[0093] in,
[0094] The CdZnTe surface treatment in step S2 consists of the first process and the second process arranged in sequence,
[0095] The first process is physical poli...
Embodiment 1
[0149] This embodiment provides a method for preparing a capacitance Frisch gate CdZnTe detector bonded to silicon at low temperature. The bonding process is direct bonding at low temperature. Refer to figure 2 The process flow chart for the preparation of the silicon-bonded capacitive Frisch grid detector includes the following steps:
[0150] 1. Clean all utensils. Clean all the test tubes, beakers, measuring cylinders, Petri dishes and tweezers required for the experiment with hot and cold deionized water respectively to prevent the dust or ions attached to the utensils from contaminating the monocrystalline silicon and cadmium zinc telluride materials. The cleaned glassware is all placed in a vacuum drying oven for drying and subsequent use;
[0151]2. Wafer pretreatment. First clean the silicon wafers, take out two silicon wafers, put them into a 100mL beaker with tweezers, then pour about 30mL of methanol solution into the beaker for soaking, put the beaker into an ul...
example example 2
[0165] This embodiment is the same as the other steps and processes of the previous embodiment, the only difference is that this embodiment provides a method for preparing a capacitance Frisch gate CdZnTe detector bonded to silicon at low temperature, and silicon In the low-temperature bonding process of wafers and CdZnTe wafers, the bonding process is low-temperature interlayer bonding, such as Figure 5 shown. Using graphene as the intermediate dielectric material, the silicon wafer and the CdZnTe wafer are cleaned in deionized water and dried with nitrogen gas; then the graphene dielectric layer is sandwiched between the silicon crystal surface and the crystal surface of the CdZnTe wafer to form Silicon-graphene-CdZnTe combined layer structure, and then perform low-temperature annealing and bonding treatment at 100°C for 24 hours, so that the graphene layer forms an electron transport layer, thereby preparing a silicon wafer and a CdZnTe wafer bond Chip.
[0166] A device...
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