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A kind of preparation method of igzo target

A technology of target material and press molding, which is applied in the field of IGZO target material preparation, can solve the problems of complex sintering process, high equipment requirements, unevenness, etc., and achieve the effect of simple sintering process, low equipment requirements, and low resistivity

Active Publication Date: 2022-04-15
中山智隆新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Sintering in air atmosphere, because the sintering temperature of IGZO target is higher than the volatilization temperature of its components, the density of sintered IGZO target will be low, generally below 98%, it is difficult to prepare high-quality target
At present, the most commonly used sintering method is oxygen atmosphere sintering, the sintering process is complicated, and the equipment requirements are high, and the resistivity of the target prepared in the oxygen atmosphere is relatively high and uneven.

Method used

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  • A kind of preparation method of igzo target

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A kind of preparation method of IGZO target material, specific preparation method sees figure 1 The process flow diagram shown. The purity is 99.99% ZnO, In 2 o 3 , Ga 2 o 3 The powders are mixed according to the molar ratio of 1:1:1, then 3wt% polyethylene glycol is added, placed in a ball mill for wet milling for 48 hours, after drying and sieving, various powders are fully mixed, with uniform particle size distribution and good formability The mixed powder, the particle size of the mixed powder is 300-600nm.

[0034] The mixed powder is divided into mixed powder A and mixed powder B, and the mixed powder A is molded under a pressure of 25 MPa, and then statically pressed under a pressure of 250 MPa to obtain a green body. Then keep the temperature at 600-900° C. for 6 hours to remove organic matter (ie degumming) to obtain a green body. Put the green body into the lower layer of the double-layer setter plate in the furnace cavity, spread the mixed powder B on t...

Embodiment 2

[0036] A preparation method of an IGZO target, comprising the following steps:

[0037]The purity is 99.99% ZnO, In 2 o 3 , Ga 2 o 3 The powders are mixed according to the molar ratio of 8:1:2, then 8wt% polyvinyl alcohol is added, placed in a ball mill for wet grinding for 96 hours, dried and sieved, and various powders are fully mixed, with uniform particle size distribution and good formability Mixed powder, the particle size of the mixed powder is 300-500nm.

[0038] The mixed powder is divided into mixed powder A and mixed powder B, and the mixed powder A is molded under a pressure of 20 MPa, and then statically pressed under a pressure of 200 MPa to obtain a green body. Then keep the temperature at 600-900° C. for 6 hours to remove organic matter (ie degumming) to obtain a green body. Put the green body into the lower layer of the double-layer setter plate in the furnace cavity, spread the mixed powder B on the upper setter plate, and the mass ratio of the mixed pow...

Embodiment 3

[0040] A preparation method of an IGZO target, comprising the following steps:

[0041] The purity is 99.99% ZnO, In 2 o 3 , Ga 2 o 3 The powders are mixed according to the molar ratio of 5:2:2, then 1wt% polyethylene glycol is added, placed in a ball mill for wet grinding for 24 hours, after drying and sieving, various powders are fully mixed, the particle size distribution is uniform, and the formability is good. The mixed powder, the particle size of the mixed powder is 300-500nm.

[0042] The mixed powder is divided into mixed powder A and mixed powder B, and the mixed powder A is molded under a pressure of 30 MPa, and then statically pressed under a pressure of 300 MPa to obtain a green body. Then keep the temperature at 600-900° C. for 6 hours to remove organic matter (ie degumming) to obtain a green body. Put the green body into the lower layer of the double-layer setter plate in the furnace cavity, spread the mixed powder B on the upper setter plate, and the mass ...

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Abstract

The invention belongs to the technical field of target material preparation and discloses a method for preparing an IGZO target material. The preparation method comprises the following steps: (1) ZnO, In 2 o 3 and Ga 2 o 3 mixing, adding additives, wet grinding, drying, and sieving to obtain a mixed powder; (2) dividing the mixed powder prepared in step (1) into two parts, mixed powder A and mixed powder B, and The mixed powder A is press-molded to obtain a green body; (3) the mixed powder B and the green body are respectively placed on the upper and lower layers of the furnace cavity, and the mixed powder B is heated in a closed furnace cavity , and then heating and cooling the blank to prepare the IGZO target. The IGZO target prepared by this preparation method has high density, high uniformity, low resistivity, relative density greater than 99.5%, and resistivity less than 9×10 ‑3 Ω·cm. The preparation method has a simple sintering process, low requirements on equipment, and is safer and more economical.

Description

technical field [0001] The invention belongs to the technical field of target material preparation, and in particular relates to a method for preparing an IGZO target material. Background technique [0002] Indium gallium zinc oxide (abbreviated as InGaZnO, also abbreviated as IGZO) thin film is a new type of semiconductor material, which has the advantages of high carrier mobility and strong chemical stability. Based on the above advantages, the IGZO film is applied to the channel layer material in the new generation of thin film transistor (TFT) technology, and the prepared TFT is easier to achieve high-speed drive, high resolution, large size, and low power consumption. The preparation methods of IGZO thin films mainly include: physical vapor deposition, chemical vapor deposition, sol-gel, etc. Due to the high bonding strength between the thin film and the substrate prepared by the physical vapor deposition method, high deposition efficiency, mature and stable process, i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/453C04B35/01C04B35/622
CPCC04B35/453C04B35/01C04B35/622C04B2235/3284C04B2235/3286C04B2235/5445C04B2235/656C04B2235/6567C04B2235/77C04B2235/602
Inventor 王晨丁金铎葛春桥柳春锡金志洸崔恒
Owner 中山智隆新材料科技有限公司