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Composite substrate and manufacturing method thereof

A composite substrate and manufacturing method technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as slow progress, achieve the effects of improving crystal quality, improving refractive index difference, and increasing the probability of light emission

Inactive Publication Date: 2021-04-13
ZHIXIN SEMICON (HANGZHOU) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the immaturity of the current technology and some problems of the above-mentioned substrate itself, the current progress is still relatively slow

Method used

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  • Composite substrate and manufacturing method thereof
  • Composite substrate and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Adopt above-mentioned scheme, specifically manufacture with the following steps:

[0038] 1. Put the sapphire substrate into the plasma-enhanced chemical vapor deposition equipment, control the process conditions, feed silane and carbon dioxide gas, and form a layer of SiO with a thickness of 100nm on the sapphire surface 2 mask;

[0039] 2. will grow with SiO 2 The sapphire substrate of the mask is put into a laser cutting machine for cutting, and M vertically staggered grooves are formed on the surface. The groove width is 100 μm and the depth is 50 μm.

[0040] 3. Use a washing machine to clean the sapphire substrate to remove impurities in the groove.

[0041] 4. Put the cleaned substrate into the physical vapor deposition equipment, control the process conditions, and grow a layer of SiO with a thickness of 40 μm 2 The heterogeneous filling layer, and then control the process conditions to grow a magnesium fluoride filling layer with a thickness of 9.8 μm.

[...

Embodiment 2

[0045] Adopt above-mentioned scheme, specifically manufacture with the following steps:

[0046] 1. Put the sapphire substrate into the plasma-enhanced chemical vapor deposition equipment, control the process conditions, feed silane and carbon dioxide gas, and form a layer of SiO with a thickness of 100nm on the sapphire surface 2 mask;

[0047] 2. will grow with SiO 2 The sapphire substrate of the mask is put into a laser cutting machine for cutting, and M vertically staggered grooves are formed on the surface. The groove width is 100 μm and the depth is 50 μm.

[0048] 3. Use a washing machine to clean the sapphire substrate to remove impurities in the groove.

[0049] 4. Put the cleaned substrate into the physical vapor deposition equipment, control the process conditions, and grow a layer of SiO with a thickness of 40 μm 2 Heterogeneous filling layer, and then control the process conditions to grow a layer of magnesium fluoride (MgF 2 ) filling layer.

[0050] 5. Take ...

Embodiment 3

[0054] Adopt above-mentioned scheme, specifically manufacture with the following steps:

[0055] 1. Put the sapphire substrate into the plasma-enhanced chemical vapor deposition equipment, control the process conditions, feed silane and carbon dioxide gas, and form a layer of SiO with a thickness of 100nm on the sapphire surface 2 mask;

[0056] 2. will grow with SiO 2 The sapphire substrate of the mask is put into a laser cutting machine for cutting, and M vertically staggered grooves are formed on the surface. The groove width is 100 μm and the depth is 30 μm.

[0057] 3. Use a washing machine to clean the sapphire substrate to remove impurities in the groove.

[0058] 4. Put the cleaned substrate into the physical vapor deposition equipment, control the process conditions, first grow a zinc oxide (ZnO) heterogeneous filling layer with a thickness of 25 μm, and then control the process conditions to grow a layer with a thickness of 4.7 μm titanium dioxide (TiO 2 ) filli...

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Abstract

The invention provides a composite substrate, which belongs to the field of semiconductor devices, and comprises a substrate base plate. Grooves are distributed on the substrate base plate in a staggered manner, heterogeneous material filling layers are filled in the grooves, and the upper surfaces of the heterogeneous material filling layers are lower than the upper surface of the substrate base plate; the refractive indexes of the substrate base plate and the heterogeneous material filling layer are different, and the refractive index of the heterogeneous material filling layer is smaller than 4. The invention further provides a manufacturing method of the composite substrate. The crystal quality of the epitaxial layer can be improved, and dislocation is reduced; meanwhile, the refractive index difference between the substrate base plate and the epitaxial layer interface can be improved, the light emitting probability is increased, the light extraction efficiency is guaranteed, and therefore the brightness is improved.

Description

technical field [0001] The invention relates to a composite substrate and a manufacturing method thereof, belonging to the field of semiconductor devices. Background technique [0002] The third-generation semiconductor materials mainly consist of gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN) and their ternary and quaternary alloy materials, because their energy band width can range from 0.7eV to 6.2 eV is continuously adjustable, and all have direct band gaps, and its excellent physical and chemical stability, high saturation electron mobility and other characteristics make it the preferred material for GaN-based light-emitting diodes (LEDs), lasers, electronic power devices and other optoelectronic devices . However, since the preparation of GaN and AlN single crystal materials is very difficult, in view of the excellent performance and technical maturity of sapphire substrates, sapphire substrates are usually selected at present. However, the latti...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/44H01L33/00
CPCH01L33/20H01L33/44H01L33/005
Inventor 不公告发明人
Owner ZHIXIN SEMICON (HANGZHOU) CO LTD
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