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Low-temperature epitaxial growth method for high-quality GaN film on surface of ZnO nanowire

A technology of epitaxial growth and nanowires, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of limiting the compatibility of GaN thin film and semiconductor device preparation process, reducing GaN thin film, high growth temperature, etc. , to achieve the effect of strong repeatability, high uniformity and high yield

Inactive Publication Date: 2021-05-28
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This severely limits the compatibility of GaN thin films and semiconductor device manufacturing processes. At the same time, the high growth temperature also greatly reduces the application of GaN thin films in many fields, such as flexible electronic devices and other fields that cannot withstand high temperature substrates.

Method used

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  • Low-temperature epitaxial growth method for high-quality GaN film on surface of ZnO nanowire
  • Low-temperature epitaxial growth method for high-quality GaN film on surface of ZnO nanowire
  • Low-temperature epitaxial growth method for high-quality GaN film on surface of ZnO nanowire

Examples

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Effect test

Embodiment 1

[0036] Example 1: ALD epitaxial growth of 10 nm GaN film at 200°C.

[0037] In the first step, ZnO nanowires are grown on the Si substrate by hydrothermal method: the Si sample is a wafer with a size of 100 cm 2 , single-sided polishing, obtained after cleaning by strict semiconductor RCA process and pre-etched, and then soaked in 5% hydrofluoric acid aqueous solution for 2 minutes to remove the surface oxide layer. Then, a 20-40 nm ZnO film was deposited on the Si substrate by ALD or suspension coating as a seed layer for growing nanowires. Then use the hydrothermal method to grow ZnO nanowires at 80 degrees, hydrothermal growth for 8 hours, you can obtain ZnO nanowires with a diameter of 40 nm and a length of 800-1000 nm, such as figure 2 shown.

[0038] The second step is a method for epitaxially growing GaN thin films on the surface of ZnO nanowires, the method comprising the following steps:

[0039] a. in the reaction chamber with inert gas as the carrier gas, put in...

Embodiment 2

[0052] Example 2: ALD epitaxial growth of 20 nm GaN film at 200°C.

[0053] In the first step, ZnO nanowires are grown on the Si substrate by hydrothermal method: the Si sample is a wafer with a size of 100 cm 2 , single-sided polishing, obtained after cleaning by strict semiconductor RCA process and pre-etched, and then soaked in 5% hydrofluoric acid aqueous solution for 2 minutes to remove the surface oxide layer. Then, a 20-40 nm ZnO film was deposited on the Si substrate by ALD or suspension coating as a seed layer for growing nanowires. Then use the hydrothermal method to grow ZnO nanowires at 80 degrees, and hydrothermally grow for 8 hours to obtain ZnO nanowires with a diameter of 40 nm and a length of 800-1000 nm.

[0054] The second step is a method for epitaxially growing GaN thin films on the surface of ZnO nanowires, the method comprising the following steps:

[0055] a. in the reaction chamber with inert gas as the carrier gas, put into the substrate that has be...

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Abstract

The invention belongs to the technical field of semiconductor apparatus manufacturing, and specifically discloses a low-temperature epitaxial growth method for a high-quality GaN film on the surface of a ZnO nanowire. A plasma-enhanced atomic layer deposition technology is adopted, so that the advantage of a growth temperature can be greatly reduced; a precursor trimethyl gallium is taken as a gallium source, and an ammonia gas is taken as a nitrogen source; and controllable growth of a high-quality GaN film is realized by adjusting plasma power and precursor pulse time process parameters. The method successfully realizes low-temperature heteroepitaxial growth of the GaN film, so that the GaN film has good crystallization behaviors, and has an orientation matched with the ZnO nanowire perfectly, and the epitaxial layer thickness can be precisely controlled in the atomic level. The low-temperature epitaxial growth method has an important scientific value in fields such as power apparatuses, microelectronics, transistors, sensors, photoelectric detection, photoelectric catalysis and energy, and has a wide application prospect.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device preparation, and in particular relates to a method for growing a GaN film on the surface of a ZnO nanowire at low temperature by heterogeneous epitaxial growth. Background technique [0002] Gallium nitride (GaN) thin film has a wide band gap, and belongs to the third generation of wide band gap semiconductor materials like SiC and diamond. Compared with the first-generation Ge, Si and the second-generation GaAs, InP compound semiconductor materials, it has very obvious advantages. Due to its large band gap and high thermal conductivity, GaN can work stably at high temperature and high pressure. At the same time, the GaN material has high breakdown voltage, small on-resistance, fast electron saturation speed, and high carrier mobility. These excellent characteristics make GaN have broad prospects in the application of optoelectronics, high-temperature high-power devices and high-freq...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/34C23C16/44
CPCC23C16/34C23C16/4417C23C16/45525
Inventor 马宏平侯欣蓝张园览吴帆正树
Owner FUDAN UNIV