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Inductive material with high anti-DC superposition and low power consumption and its preparation method

A DC superposition, low power consumption technology, applied in the direction of inductor/transformer/magnet manufacturing, magnetic materials, inorganic material magnetism, etc. problems such as low conductivity, to achieve the effects of high resistance to DC superposition, low power consumption, high insulation, and high magnetic permeability

Active Publication Date: 2022-05-10
东莞顺络功率器件有限公司
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, the nanocrystalline composite material is mainly composed of nanocrystalline or amorphous materials, and the commercially available nanocrystalline materials have low power consumption, but their anti-DC superposition performance is poor, and the magnetic permeability of amorphous materials is generally low, which cannot be used. Requirements, and the addition of a large amount of resin to the material leads to low magnetic permeability, which cannot achieve the goal of low power consumption and high resistance to DC superposition

Method used

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  • Inductive material with high anti-DC superposition and low power consumption and its preparation method

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preparation example Construction

[0029] In one embodiment, a method for preparing an integrally formed inductor material with high DC resistance and low power consumption includes the following steps:

[0030] S1. Prepare alloy powder, the alloy powder contains 88-96wt% Fe, 2.9-4.5wt% Si, 0.5-3.0wt% P, 0.5-3.0wt% B, 0.05-0.75wt% Co, 0.05-0.75wt% C;

[0031] S2. The alloy powder is acidified, mixed with silanol or water glass or methyl aluminum or aluminum alkoxide after treatment, and then one or more of nitrogen, argon and hydrogen at 300°C to 400°C. in a mixed atmosphere of 3-8 hours;

[0032] S3. Select one or more of Fe, FeSiAl, FeNi, FeSiCr, Fe-based amorphous, Fe-based nanocrystalline powders and mix them with the resin solution to prepare a magnetic binder with a solid content of 88%-92%;

[0033] S4. The material obtained in step S2 and the magnetic binder are graded according to the mass ratio of 8:2-6:4, and 0.005wt%-0.05wt% of aluminum oxide or silicon oxide powder relative to the weight of the a...

Embodiment 1

[0046] The material is selected, and its composition is 88wt% Fe, 4.5wt% Si, 3.0wt%P, 3.0wt%B, 0.75wt%Co, 0.75wt%C. The material is smelted in a high-frequency furnace to form an alloy liquid, which is sprayed into the cooling tower through a high-speed air flow, and rapidly cooled by a rotating water flow at a cooling rate of 103K / S to form an alloy spherical powder, and the particle size of the spherical powder is between 15 μm and 60 μm. ; The treated powder is acidified with hydrochloric acid, wherein the concentration of hydrochloric acid is 5%, and the acid value is 3.15. After the treatment, it is mixed with water glass (Na2SiO3*5H2O), and the mixed solution is treated in a nitrogen atmosphere at 400 ° C for 3 hours. , the residual amount of decomposition product C is less than 2000ppm; Fe powder of 3 μm is selected to be mixed with epoxy resin and melamine resin, wherein the epoxy resin is a hyperbranched epoxy resin with a -C-N-flexible chain structure containing 12 im...

Embodiment 2

[0048] The material is selected, and its composition is 96wt% Fe, 2.9wt% Si, 0.5wt%P, 0.5wt%B, 0.05wt%Co, 0.05wt%C. The material is smelted in a high-frequency furnace to form an alloy liquid, which is sprayed into the cooling tower by a high-speed air flow, and rapidly cooled by a rotating water flow at a cooling rate of 103K / S to form an alloy spherical powder, and the particle size of the spherical powder is between 10 μm and 50 μm. ; The treated powder is acidified with phosphoric acid, wherein the phosphoric acid concentration is 10%, the acid value is 5.3, mixed with methyl aluminum after treatment, and the mixed is treated in an argon atmosphere at 300 ° C for 8 hours, the decomposition product The residual amount of C is less than 2000ppm; 1μm FeSiCr powder is selected to be mixed with epoxy resin and cyanate ester, wherein the epoxy resin is bisphenol A type glycidyl ether epoxy resin, the epoxy value is 0.52, and the cyanate ester is dicyclopentane Ethylene-type cyan...

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Abstract

A method for preparing an integrally molded inductance material with high DC resistance and low power consumption, comprising: S1, preparing alloy powder, including 88-96wt% Fe, 2.9-4.5wt% Si, 0.5-3.0wt% P, 0.5-3.0wt% wt% B, 0.05-0.75wt% Co, 0.05-0.75wt% C; S2, after the alloy powder is acidified, mixed with silanol, water glass, methyl aluminum or aluminum alkoxide, and then heated at 300°C-400°C Treat in one or more mixed atmospheres of nitrogen, argon, and hydrogen; S3, mix one or more of Fe, FeSiAl, FeNi, FeSiCr, Fe-based amorphous, Fe-based nanocrystalline powder with resin solution Mixing to prepare a solid content magnetic binder; S4, grading the material obtained in step S2 and the magnetic binder according to a mass ratio of 8:2-6:4 and adding a mixed powder weight of 0.005wt%-0.05wt% The alumina or silicon oxide powder is mixed and dried to obtain a mixed powder; S5, pressing the mixed powder to obtain an integrated inductor material. The integrally formed inductance material obtained by using the preparation method of the present invention can well meet the requirements of inductance devices for high DC superposition resistance and low power consumption.

Description

technical field [0001] The invention relates to the technical field of the preparation of soft magnetic alloy materials, in particular to an integrally formed inductor material with high resistance to direct current superposition and low power consumption and a preparation method thereof. Background technique [0002] With the development of big data, cloud computing, and the Internet of Things, data centers have an increasing demand for high efficiency and high power density. At present, the 48V intermediate bus architecture (IBA) has replaced the traditional 12V architecture and has been widely used due to its advantages of high efficiency, low cost, and good flexibility. Most of the power conversion of the IBA is carried out on the server motherboard, from 48V (40~60V) bus voltage to 12V (9~12V) using an intermediate bus converter (IBC), and then using the point of load (point of load). -of-load, POL) converter converts to the required low voltage such as 3.3V, 1.2V, etc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/147H01F1/153H01F41/02H01F1/26
CPCH01F1/14791H01F1/14758H01F1/14766H01F1/15308H01F1/15333H01F1/15375H01F1/15341H01F41/0246H01F1/26
Inventor 谈敏聂敏刘成华肖更新
Owner 东莞顺络功率器件有限公司
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