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A gallium nitride 3d-resurf field effect transistor and its manufacturing method

A technology of field effect transistors and gallium nitride, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of low chip area utilization, achieve high chip area utilization, enhanced threshold voltage, The effect of high reverse withstand voltage

Active Publication Date: 2022-05-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
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Problems solved by technology

[0004] What the present invention aims to solve is to solve the above-mentioned problem of low chip area utilization of the traditional gallium nitride HEMT device, and propose a device with higher chip area utilization, good electric field distribution in the body, high breakdown voltage, and low on-resistance Novel Gallium Nitride 3D-RESURF (3-Dimensional-Reduced Surface Field) Field Effect Transistor

Method used

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  • A gallium nitride 3d-resurf field effect transistor and its manufacturing method
  • A gallium nitride 3d-resurf field effect transistor and its manufacturing method
  • A gallium nitride 3d-resurf field effect transistor and its manufacturing method

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Embodiment

[0044] Figure 3-Figure 12 It is a schematic diagram of the manufacturing process steps of a gallium nitride 3D-RESURF field effect transistor of the present invention, and its process flow is as follows:

[0045] (1) epitaxially grow gallium nitride buffer layer 2, unintentionally doped gallium nitride channel layer 3, aluminum gallium nitride barrier layer 4 and dielectric passivation layer 5 on the upper layer of substrate substrate 1 and passivate Deposit a layer of hard mask material on the medium 5, such as image 3 shown;

[0046] (2) First, etch the position where the P-type gallium nitride electric field modulation region 6 needs to be grown to form an etching groove, such as Figure 4 shown. Subsequently, using the secondary epitaxy technique, the P-type GaN material is epitaxially grown in the etching groove to form the P-type GaN electric field modulation region 6 , and the hard mask is removed and planarized. The combination of chemical mechanical polishing te...

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Abstract

The invention relates to the technical field of semiconductor devices, in particular to a gallium nitride 3D-RESURF field effect transistor and a preparation method thereof. The invention introduces the P-type gallium nitride electric field modulation region in the traditional gallium nitride HEMT device through groove cutting and secondary epitaxy. A p-n junction composed of p-type gallium nitride-two-dimensional electron gas is formed at the drift region, and the depletion and expansion of the space charge region of the p-n junction is introduced parallel to the gate width direction when the device is blocked and withstand voltage The electric field intensity component changes the original electric field direction, so that the electric field peak on the drain side of the gate is relieved, and the electric field intensity is significantly reduced; at the same time, the p-n junction is used to deplete the two-dimensional electron gas, which reduces the device leakage current and improves the unit drift of the device. Zone length withstand voltage capability. The present invention realizes a new electric field modulation method different from the traditional field plate technology by introducing a p-type gallium nitride-two-dimensional electron gas p-n junction into a gallium nitride HEMT device, and uses the new structure to improve device breakdown voltage while reducing the on-resistance of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a gallium nitride 3D-RESURF field effect transistor and a manufacturing method thereof. Background technique [0002] Gallium nitride (GaN) is known for its high critical breakdown electric field (~3.5×10 6 V / cm), high-concentration two-dimensional electron gas (~10 13 cm -2 ), high electron mobility (~2000cm 2 / v s) and good high-temperature working ability are favored by the field of high-speed and high-power devices. In addition, thanks to the high bandgap width of gallium nitride, its radiation resistance is inherently better than that of silicon-based devices, which also makes gallium nitride devices receive great attention in the fields of wireless communication and satellite communication. In the field of power semiconductors, thanks to the increasingly mature GaN-on-Si technology, the cost of GaN power devices has been greatly reduced, and it has also la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/778H01L21/335
CPCH01L29/0619H01L29/7787H01L29/0634H01L29/0684H01L29/66462
Inventor 周琦李翔宇黄芃陈匡黎王景海韩晓琦张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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