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Semiconductor high-density lead frame and manufacturing process thereof

A technology of lead frame and manufacturing process, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc. It can solve the problems of low precision of photolithographic patterns, difficult guarantee of processing accuracy, and inconvenient processing and manufacturing of lead frames, etc.

Active Publication Date: 2021-07-13
昆山弗莱吉电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Nowadays, the processing methods of lead frames include die stamping method and chemical etching method. Among them, the die stamping method has high production efficiency, but the processing accuracy is difficult to guarantee, and the appearance is prone to burrs during processing, which has been gradually eliminated by us; Etching is a more commonly used processing method, but there are still many disadvantages in the processing process of the existing etching method, such as low precision of photolithographic patterns, side corrosion and other problems, which are very important in the process of lead frame manufacturing. bring inconvenience

Method used

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  • Semiconductor high-density lead frame and manufacturing process thereof
  • Semiconductor high-density lead frame and manufacturing process thereof

Examples

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Effect test

Embodiment 1

[0042] A manufacturing process for a semiconductor high-density lead frame, comprising the following steps:

[0043] (1) Take the copper substrate, wash it with deionized water for 3 minutes, then place it in the electrolyte for cathodic electrolytic degreasing, rinse it with deionized water, then soak it in nitric acid solution for 20s, remove the surface oxide film, rinse it with deionized water, and place it Activated in the activation solution for 3 minutes, rinsed with deionized water to obtain a pretreated copper substrate; the electrolyte is a mixture of trisodium phosphate, sodium hydroxide, sodium silicate and sodium carbonate, the temperature during electrolytic degreasing is 50°C, and the current The density is 10A / dm 2 , The electrolytic oil removal time is 20s.

[0044] (2) Take the pretreated copper substrate, place it in the electroplating solution, and electroplate a pure copper layer on the surface of the pretreated copper substrate, the electroplating temper...

Embodiment 2

[0051] A manufacturing process for a semiconductor high-density lead frame, comprising the following steps:

[0052] (1) Take the copper substrate, wash it with deionized water for 4 minutes, then place it in the electrolyte for cathodic electrolytic degreasing, rinse it with deionized water, and then soak it in nitric acid solution for 25s to remove the surface oxide film, rinse it with deionized water and place it Activated in the activation solution for 4 minutes, rinsed with deionized water, and obtained the pretreated copper substrate; the electrolyte was a mixture of trisodium phosphate, sodium hydroxide, sodium silicate and sodium carbonate, and the temperature during electrolytic degreasing was 52°C, and the current The density is 11A / dm 2 , The electrolytic oil removal time is 23s.

[0053] (2) Take the pretreated copper substrate, place it in the electroplating solution, and electroplate a pure copper layer on the surface of the pretreated copper substrate, the elec...

Embodiment 3

[0060] A manufacturing process for a semiconductor high-density lead frame, comprising the following steps:

[0061] (1) Take the copper substrate, wash it with deionized water for 5 minutes, then place it in the electrolyte for cathodic electrolytic degreasing, rinse it with deionized water, and then soak it in nitric acid solution for 30s to remove the surface oxide film, rinse it with deionized water and place it Activated in the activation solution for 5 minutes, rinsed with deionized water to obtain a pretreated copper substrate; the electrolyte is a mixture of trisodium phosphate, sodium hydroxide, sodium silicate, and sodium carbonate, and the temperature during electrolytic degreasing is 55°C. The density is 12A / dm 2 , The electrolytic oil removal time is 25s.

[0062] (2) Take the pretreated copper substrate, place it in the electroplating solution, and electroplate a pure copper layer on the surface of the pretreated copper substrate, the electroplating temperature ...

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Abstract

The invention discloses a semiconductor high-density lead frame and a manufacturing process thereof. The manufacturing process includes the steps of pretreatment, electroplating, browning, rolling, photoetching and the like to prepare the high-density and high-precision semiconductor lead frame, and comprises the steps of during preparation, treating the surface of a copper substrate firstly, placing the copper substrate in an electrolyte for cathode electrolysis oil removal, and then removing the oil stains on the surface of the copper substrate to ensure that the surface of the copper substrate is clean; then placing the copper substrate in an acid solution for thoroughly removing an oxidation film on the surface of the copper substrate; and then activating the surface of the copper substrate, keeping the surface activity of the copper substrate, well combining the copper substrate and a subsequent plating layer, so that the pre-treated copper substrate is obtained. According to the present invention, the photoetching pattern is formed on the surface of the copper substrate after photoetching, the subsequent metal layer electroplating, chip bonding and other processes can be carried out in the actual operation, the surface of the prepared lead frame is free of scratches, dents and stains, and the semiconductor high-density lead frame and the manufacturing process thereof can be widely applied to the fields of chip packaging and the like.

Description

technical field [0001] The invention relates to the technical field of lead frames, in particular to a semiconductor high-density lead frame and a manufacturing process thereof. Background technique [0002] As the chip carrier of integrated circuits, the lead frame is a key structural part that realizes the electrical connection between the lead-out end of the chip's internal circuit and the outer lead by means of bonding materials (gold wire, aluminum wire, copper wire) to form an electrical circuit. When it comes to the bridge function of connecting with external wires, most semiconductor integrated blocks need to use lead frames, which are important basic materials in the electronic information industry. [0003] Nowadays, the processing methods of lead frames include die stamping method and chemical etching method. Among them, the die stamping method has high production efficiency, but the processing accuracy is difficult to guarantee, and the appearance is prone to bur...

Claims

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Application Information

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IPC IPC(8): H01L21/48H01L23/495C25D3/28C25D5/34C25F1/04C23C22/52C23C22/82C23F1/02B05D3/02B05D7/14
CPCH01L21/4821H01L21/4842H01L21/4828H01L21/4835H01L23/49586B05D7/14B05D3/0254C25D3/28C25D5/34C25F1/04C23C22/52C23C22/82C23F1/02
Inventor 周武刘波
Owner 昆山弗莱吉电子科技有限公司
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