Organic photovoltaic device preparation process based on metal nanoparticle magnetothermal effect annealing process

A technology of organic photovoltaic devices and metal nanoparticles, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc. Separation and transport, efficient preparation, inhibition of recombination effects

Active Publication Date: 2021-08-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the past three years, the synthesis of a large number of new materials based on Y-series non-fullerene materials has also become the main research goal of researchers. However, the rapid development of material synthesis has led to the research on the photoactive layer of the device and the internal working mechanism of the device. lack

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] 1. Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and dry it with nitrogen after cleaning;

[0022] 2. Spin-coat ZnO on the surface of the transparent conductive cathode ITO; the rotation speed is 5000rpm, the time is 50s, the thickness of the coating is 40nm, the cathode buffer layer is prepared, and the formed film is subjected to thermal annealing treatment, the temperature of thermal annealing treatment at 200°C for 2 hours;

[0023] 3. Drop PM6:Y6 solution on the cathode buffer layer, the ratio of PM6:Y6 is 1:1, the solution concentration is 6mg / ml, and the photoactive layer is prepared by spin coating process, the rotation speed is 4000rpm, and the time is 40s. The thickness of the coating is 90nm;

[0024] 4. Place the PM6:Y6 photoactive layer on a constant temperature hot stage at 90°C for 10 minutes in an atmospheric environment;

[0025] 5. An anode buffer layer MoO3 is evapo...

Embodiment 2

[0029] 1. Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and dry it with nitrogen after cleaning;

[0030] 2. Spin-coat ZnO on the surface of the transparent conductive cathode ITO to prepare the cathode buffer layer; the rotation speed is 5000rpm, the time is 50s, the thickness of the coating is 40nm, and the formed film is subjected to thermal annealing treatment. The temperature of the thermal annealing treatment is 200 ℃, time is 2H;

[0031] 3. The mixed photoactive layer is prepared by spin coating, and the PM6:Y6:Fe3O4 solution is coated on the mixed photoactive layer. The ratio of PM6:Y6:Fe3O4 in the PM6:Y6:Fe3O4 solution is 1:1:0.1; the solution concentration is 6mg / ml, the rotation speed during spin coating is 4000rpm, the time is 40s, and the coating thickness is 110nm;

[0032] 4. In the atmospheric environment, place the PM6:Y6:Fe3O4 photoactive layer in a conductive coil with an ...

Embodiment 3

[0037] 1. Clean the substrate composed of transparent substrate and transparent conductive cathode ITO with surface roughness less than 1nm, and dry it with nitrogen after cleaning;

[0038] 2. Spin-coat ZnO on the surface of the transparent conductive cathode ITO to prepare the cathode buffer layer. The rotation speed is 5000rpm, and the time is 50s. The thickness of ZnO coating is 40nm, and the formed film is thermally annealed; the annealing temperature is 200°C , the annealing time is 2H;

[0039] 3. The mixed photoactive layer is prepared by spin coating, and the PM6:Y6:Fe3O4 solution is coated on the mixed photoactive layer. The ratio of PM6:Y6:Fe3O4 in the PM6:Y6:Fe3O4 solution is 1:1:0.2, and the concentration of the solution is 6mg / ml, the rotation speed is 4000rpm, the time is 40s, and the thickness of the coating is 110nm;

[0040] 4. In the atmospheric environment, place the PM6:Y6:Fe3O4 photoactive layer in a conductive coil with an alternating current for magnet...

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Abstract

The invention relates to an organic photovoltaic device preparation process based on a metal nanoparticle magnetothermal effect annealing process. According to the invention, a ferric oxide nanoparticle-doped optical active layer is prepared by doping a small amount of ferric oxide nanoparticle solution into a solution of the optical active layer and conducting co-spin coating, and after a film is prepared, a solar cell device is placed in a wire coil with alternating current, the whole device is directly heated in a non-contact mode through the magnetothermal effect of a metal thin layer, and effective thermal annealing treatment is directly carried out from the optical active layer, so better crystallization characteristics and internal charge transmission characteristics are achieved and short circuit current characteristics of the device are improved; secondly, an iron oxide nanoparticle layer can effectively improve the characteristics of contact between the optical active layer and an electrode buffer layer, so the suppression of the energy loss of the photovoltaic device is realized, the open-circuit voltage characteristic of the device is improved; and finally, the weak magneto-optical effect of the magnetic nanoparticles can further improve the light wave absorption characteristic of the optical active layer.

Description

technical field [0001] The invention belongs to the field of organic polymer photovoltaic devices or organic semiconductor thin-film solar cells, and in particular relates to an organic photovoltaic device preparation process based on a metal nanoparticle magnetocaloric effect annealing process. Background technique [0002] With the rapid development of the world economy and the increasing updating of science and technology, the development and utilization of new energy sources are the basic needs and key development directions of current social development. At present, new clean energy mainly includes: wind energy, thermal energy, nuclear energy and solar energy, etc. Under this premise, solar energy has received extensive attention from researchers for its inexhaustible value, inexhaustible, completely green and pollution-free characteristics. Regarding the utilization of solar energy, it is currently divided into two categories: photovoltaic technology and photothermal t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K71/12H10K71/40H10K30/35Y02E10/549
Inventor 于军胜张大勇杨根杰李嘉文
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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