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Preparation method of manifold type all-diamond micro-channel radiator

A diamond and microchannel technology, applied in heat exchange equipment, lighting and heating equipment, etc., can solve the problems of thermal management system design requirements that cannot effectively cope with ultra-high heat flux devices, small microchannel size, and increased packaging difficulty. Achieving the effect of good shape, strong heat exchange capacity and high encapsulation

Active Publication Date: 2021-08-17
UNIV OF SCI & TECH BEIJING +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Patent CN108682662A discloses a diamond microchannel preparation method. However, the diamond microchannel channel formed by the above-mentioned method is exposed, and a cover plate is required to realize sealed installation, which increases the difficulty of packaging.
Magazine Materials Letters 2019, volume 255, document number: 126556, epitaxially growing a diamond layer on a single crystal diamond with grooves, and obtained a self-sealing microchannel, but the microchannel is small in size, irregular in shape, and the channel The path is a straight channel, which is easy to cause boiling instability and local dry-out under high heat flux density, and cannot effectively meet the design requirements of the thermal management system for ultra-high heat flux devices

Method used

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  • Preparation method of manifold type all-diamond micro-channel radiator
  • Preparation method of manifold type all-diamond micro-channel radiator
  • Preparation method of manifold type all-diamond micro-channel radiator

Examples

Experimental program
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Effect test

Embodiment 1

[0036] 1. Use a DC plasma jet chemical vapor deposition device to grow a diamond thick film on a molybdenum substrate with a diameter of 100mm and a thickness of 50mm plated with a composite transition layer of Ti, Mo, Si, and W. Grind the substrate with diamond abrasive paste with a particle size of 0.5 μm for 5 min, and rinse with acetone twice. Put it into the chamber, set the deposition temperature range to 850-950°C, Ar flow rate to 4slm, H 2 The flow is 7.8slm, CH 4 The flow rate is 100sccm, every growth 100h, the CH 4 The flow rate was increased to 130sccm, nucleation was performed for 15 minutes, and then CH was closed 4 , keep H 2 / Ar plasma treatment for 10 min. Then set the CH 4 Flow to 120sccm and continue to grow for 100h. Until the deposition time is 350h, at the same time, the deposition table is continuously reduced at a rate of 15μm / h during the diamond film deposition stage, and the distance between the deposition surface and the anode is always kept at...

Embodiment 2

[0043] 1. Select a direct current plasma jet chemical vapor deposition device to prepare a diamond thick film on a graphite substrate with a diameter of 100 mm, use a diamond abrasive paste with a particle size of 0.5 μm to grind the substrate for 5 minutes, wash it with acetone twice, and then dry it and put it into chemical vapor deposition In the system; a diamond thick film is prepared on the surface of the above-mentioned substrate by using direct-flow jet CVD technology. The deposition process is set to: CH 4 The flow rate is 120sccm, H 2 The flow rate is 7.5slm, the Ar flow rate is 3.7, the power is about 22kW, and the substrate temperature is about 900°C. Every 120h of growth, the CH 4 Increase the flow rate by 50 sccm, nucleate for 10 minutes, and then close CH 4 , keep H 2 / Ar plasma treatment for 20min, and then CH 4 Flow was reduced by 30 sccm to continue growth. At the same time, during the diamond film deposition stage, the deposition table is reduced at a ...

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Abstract

The invention discloses a preparation method of an all-diamond micro-channel radiator with a manifold type fluid path, and belongs to the field of heat dissipation of high-power devices. The manifold type all-diamond microchannel is composed of a packaging cover plate, a shunting substrate, a microchannel substrate and a packaging bottom plate. The preparation method comprises the following steps: firstly, a high-quality crack-free diamond self-supporting thick film is prepared through a CVD preparation process of secondary nucleation and dynamic adjustment of a deposition surface; the surface is flattened through mechanical grinding and polishing; then, the size of a rectangular micro-channel in diamond plates is shaped by adopting a special laser processing technology; at the same time, a welding surface is metalized to improve the welding performance;and finally, the diamond plates are welded together in sequence through a vacuum brazing technology, a manifold type all-diamond micro-channel heat exchanger with the qualified size and groove type is obtained, and the manifold type all-diamond micro-channel heat exchanger meets the heat dissipation design requirement of a high-heat-flux heat exchanger. The micro-channel heat exchanger can be used for effective heat management of high-power advanced equipment such as high-power communication and navigation satellites, directional high-energy weapons and wide bandgap semiconductor radars.

Description

technical field [0001] The invention belongs to the field of heat dissipation of high heat flux electronic devices, and in particular provides a method for preparing a manifold-type all-diamond microchannel heat sink for ultra-high heat flux heat dissipation, which is an all-diamond microchannel with a complex interlaced structure heat sink. Background technique [0002] With the continuous improvement of miniaturization and integration of electronic devices, the heat flux generated by electronic devices increases rapidly. If the heat is not removed in time, it will seriously affect the stability, safety and reliability of electronic devices and electronic systems. According to statistics, 55% of electronic equipment failures are caused by excessive operating temperature. Effective thermal management of microelectronic devices with high heating power systems has become an urgent problem to be solved in the development of microelectronic devices. Due to the high surface-to-...

Claims

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Application Information

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IPC IPC(8): F28F21/02
CPCF28F21/02F28F2260/02
Inventor 魏俊俊涂军磊史佳东陈良贤张建军李成明刘金龙高旭辉
Owner UNIV OF SCI & TECH BEIJING
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