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A method for preparing tungsten trioxide high light extraction efficiency OLED external light extraction layer by ultrasonic spraying

A technology of ultrasonic spraying and highlight extraction, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low output coupling efficiency of OLED external light, high technical cost and difficulty, and achieve low cost and large size Effects of large-scale loading, low material cost, and lower deposition temperature

Active Publication Date: 2022-05-06
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0004] The object of the present invention is to provide a method for preparing an external light extraction layer of OLED with high light extraction efficiency of tungsten trioxide by ultrasonic spraying, which solves the problems of low output coupling efficiency of OLED external light and high cost of related technologies that are not easy to be loaded on large-scale devices question

Method used

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  • A method for preparing tungsten trioxide high light extraction efficiency OLED external light extraction layer by ultrasonic spraying
  • A method for preparing tungsten trioxide high light extraction efficiency OLED external light extraction layer by ultrasonic spraying
  • A method for preparing tungsten trioxide high light extraction efficiency OLED external light extraction layer by ultrasonic spraying

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Experimental program
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preparation example Construction

[0049] The preparation method steps are as follows:

[0050] Step 1: Clean the glass substrate sequentially by ultrasonic cleaning for 15 minutes with decontamination agent, deionized water and absolute ethanol respectively.

[0051] Step 2: Dry the glass substrate in an oven at 200° C. for 1 hour, load the dried glass substrate on a glass stage, and heat the stage to 600° C., and then keep it for 10 minutes.

[0052] Step 3: Ultrasonic cleaning of the glass substrate for 15 minutes was performed sequentially with decontamination agent, deionized water, acetone, deionized water and isopropanol respectively.

[0053] Step 4: Pass the glass substrate into the vacuum evaporation chamber to evaporate Au / TAPC / TAPC:P0-T2T:FIrpic(1:1,15%,20nm) / P0-T2T / LiF / Au sequentially; the organic layer evaporation rate for The evaporation rate of the inorganic layer is

Embodiment 1

[0054] Device 1 (Device 1) was prepared in Example 1.

Embodiment 2

[0056] The device structure from bottom to top is as follows:

[0057] WO 3 -W 20 o 58 -1 / glass substrate / Au(120nm) / TAPC(35nm) / TAPC:P0-T2T:FIrpic(1:1,15%,20 nm) / P0-T2T(50nm) / LiF(1nm) / Au( 100nm)

[0058] Namely: the external light extraction layer of Experiment 1, the thickness of the anode is 120nm, the thickness of the hole transport layer is 35nm, the thickness of the light emitting layer is 20nm, the thickness of the electron transport layer is 50nm, the thickness of the electron injection layer is 1nm, and the thickness of the cathode is 100nm.

[0059] The preparation method steps are as follows:

[0060] Step 1: get 53.5g ammonium paratungstate, ethylene glycol butyl ether (dipole moment is 6.94 10 -30 cm) 500mL and 9.5% volume fraction ratio of dilute ammonia 500mL are mixed to obtain a precursor solution that is a mixed solution of ammonium tungstate with a concentration of 53.5g / L.

[0061] Step 2: Use decontamination agent, deionized water, and absolute ethanol...

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Abstract

The invention discloses a method for preparing an external light extraction layer of an OLED with high light extraction efficiency of tungsten trioxide by ultrasonic spraying. The structure of the high light extraction efficiency OLED device involved is an external light extraction film, a glass substrate, an anode layer, and a cavity from bottom to top. Transport layer, light emitting layer, electron transport layer, electron injection layer, cathode. Ultrasonic spraying of the present invention prepares the external light extraction layer. Firstly, the precursor ammonium paratungstate is dissolved by a polar organic solvent with a large dipole moment and extremely volatile and dilute ammonia water to obtain a high-concentration precursor solution, and then the precursor is ultrasonically atomized. The solution passes through the organic phase filtrate transfer tube and the high-temperature transfer tube in turn, and the nozzle and the high-temperature transfer tube are used as cathode and anode respectively to add a pulse bias power supply to control the fluid rate and spray uniformity, so that the fluid is sprayed on the glass substrate backplane to obtain an outer surface. Light extraction layer.

Description

technical field [0001] The invention relates to the field of organic electroluminescent devices, and relates to a method for preparing an external light extraction layer of an OLED with high light extraction efficiency of tungsten trioxide by ultrasonic spraying. Background technique [0002] As the third-generation display technology, OLED devices have been industrialized and widely used with the continuous optimization of color rendering characteristics, continuous improvement of efficiency and maturity of packaging technology. At the same time, taking healthy lighting as an example, OLED, which combines the advantages of thinness, softness, no blue light hazard, low glare and candlelight, is known as the fourth light source revolution product. OLED light has a high degree of uniformity and can be continuously dimmed; it can also be divided into smaller parts and given different brightness. OLED is the first to be used in the decoration, indoor lighting and vehicle lighti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56H01L51/52
CPCH10K50/85H10K50/858H10K71/00
Inventor 于军胜任展鹏赵聃李璐
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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