A method of preparation of a tungsten nano -nanofiber photogenic materials

A nanofiber, photoanode technology, applied in the directions of nanotechnology, nanotechnology, fiber chemical characteristics, etc., can solve the problem of batch production of photoelectrode films, immature low-cost preparation methods, difficult FTO conductive glass surface, and hydrothermal reaction time. Long and other problems, to achieve the effect of low spinning cost, excellent photocurrent, and reduced distance

Active Publication Date: 2022-08-09
TAIZHOU UNIV +1
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  • Abstract
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  • Claims
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Problems solved by technology

Currently SnWO 4 The synthesis of photoelectrode materials mainly adopts hydrothermal method, magnetron sputtering method and pulsed laser deposition method, etc. Among them, the reaction time of hydrothermal method is long, and it is difficult to form films in batches on the surface of FTO conductive glass
Although magnetron sputtering and pulsed laser deposition can realize SnWO 4 High-volume production on conductive substrates, but expensive equipment required
Therefore, SnWO 4 The mass-scale and low-cost preparation methods of photoelectrode thin films are still immature and worthy of further development

Method used

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  • A method of preparation of a tungsten nano -nanofiber photogenic materials
  • A method of preparation of a tungsten nano -nanofiber photogenic materials

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[0024] The present invention provides a SnWO 4 The preparation method of nanofiber photoanode material comprises the following steps:

[0025] Mixing the inorganic tin source, the inorganic tungsten source, the organic polymer and the organic solvent to obtain a spinning solution;

[0026] By means of electrospinning, three-dimensional nanofibers are prepared on the surface of FTO conductive glass by using the spinning solution;

[0027] calcining the three-dimensional nanofibers to obtain the SnWO 4 Nanofiber photoanode material.

[0028] In the present invention, unless otherwise specified, all raw material components are commercially available products well known to those skilled in the art.

[0029] In the invention, the inorganic tin source, the inorganic tungsten source, the organic macromolecular polymer and the organic solvent are mixed to obtain the spinning solution.

[0030] In the present invention, the inorganic tin source is preferably tin chloride or tin nit...

Embodiment 1

[0049] Mix 0.52 g of tin chloride, 0.79 g of tungsten chloride and 10 mL of ethanol (7.89 g), stir until all dissolved, add 0.8 g of polyvinylpyrrolidone, and stir for 12 h to obtain a spinning solution;

[0050] Under the condition of ultrasonic, the FTO conductive glass was washed with water, ethanol and acetone in turn, and then washed with high-purity N 2 Blow dry, spare;

[0051] Use a pipette to transfer 200 μL of 5% polyvinyl alcohol aqueous solution for spin coating onto the surface of the cleaned FTO conductive glass with a size of 2 × 2 cm, and then fix the FTO conductive glass on the drum of the electrospinning device. . At the same time, the spinning solution was poured into the syringe, and the electrospinning process parameters were set: the spinning voltage was 20 kV, the rotation speed of the drum was 150 r / min, and the advancing speed was 1 mm / h, and electrospinning was performed to obtain three-dimensional nanofibers;

[0052] The three-dimensional nanofibe...

Embodiment 2

[0055] Mix 0.52 g of tin chloride, 0.79 g of tungsten chloride and 10 mL of ethanol (7.89 g), stir until all dissolved, add 1 g of polyvinylpyrrolidone, and stir for 12 h to obtain a spinning solution;

[0056] Under the condition of ultrasonic, the FTO conductive glass was washed with water, ethanol and acetone in turn, and then washed with high-purity N 2 Blow dry, spare;

[0057] Pipette 300 μL of 10% polyvinyl alcohol aqueous solution and spin-coat it onto the surface of the cleaned FTO conductive glass with a size of 2 × 2 cm, and then fix the FTO conductive glass on the drum of the electrospinning device. . At the same time, pour the spinning solution into the syringe, and set the electrospinning process parameters: the spinning voltage is 15kV, the drum speed is 100r / min, and the advancing speed is 2mm / h, and electrospinning is performed to obtain three-dimensional nanofibers;

[0058] The three-dimensional nanofibers were taken out, kept in a muffle furnace at 100 °C...

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Abstract

The invention relates to the technical field of photoelectrode materials, in particular to a preparation method of a tin tungstate nanofiber photoanode material. The preparation method provided by the present invention includes the following steps: mixing an inorganic tin source, an inorganic tungsten source, an organic high molecular polymer and an organic solvent to obtain a spinning solution; adopting electrostatic spinning, using the spinning solution in FTO Three-dimensional nanofibers are prepared on the surface of conductive glass; the three-dimensional nanofibers are calcined to obtain the SnWO 4 Nanofiber photoanode material. The preparation method has the advantages of simple process route, convenient equipment and low spinning cost, and can realize SnWO 4 mass production and large area SnWO 4 Controllable fabrication of photoelectrodes. Prepared SnWO 4 The photoelectrode can generate relatively excellent photocurrent and lower onset potential under simulated sunlight irradiation, which increases the efficiency of photoelectric conversion of water splitting, and has strong application prospects in the field of clean energy production in the future.

Description

technical field [0001] The invention relates to the technical field of photoelectrode materials, in particular to a preparation method of a tin tungstate nanofiber photoanode material. Background technique [0002] Due to the non-renewable nature of fossil energy, the extensive use of fossil energy may cause a future energy crisis. Semiconductor photocatalysis technology can use solar energy and a small amount of bias to split water into hydrogen and oxygen, providing a feasible way to solve the energy problem. . Currently, TiO 2 It is the most commonly used semiconductor photoelectrode material. However, due to its wide band gap (3.0-3.2 eV), its utilization of solar energy is severely limited, and its photoelectric conversion efficiency is difficult to reach the 10% required for practical applications. Therefore, the development of novel semiconductor photoelectrode materials with broad spectral responses is of great scientific significance to promote the application of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/04C25B1/55C25B11/087C25B11/077C25B11/02D01F9/10B82Y30/00B82Y40/00
CPCC25B1/04C25B11/02C25B11/04D01F9/10B82Y30/00B82Y40/00Y02P20/133
Inventor 熊贤强武承林陈啸莫晨剑付帅张川群范利亚韩得满
Owner TAIZHOU UNIV
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