Compound containing diphenyl sulfone skeleton and preparation method and application thereof
A technology of diphenyl sulfone and compound, which is applied in the application field of organic electroluminescent materials, can solve the problems of aggregation-induced quenching, low exciton utilization rate, etc., and achieves simple preparation method, high product yield and purity, and luminous efficiency. high effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0033] Example 1, 10-(4-((3,5-bis(9hydro-carbazol-9-yl)phenyl)sulfonyl)phenyl)-9,9-dimethyl-9,10-di The preparation of hydrogen acridine, step is as follows:
[0034] (1) Synthesis and Characterization of 9,9'-(5-bromo-1,3-phenylene)bis(9H-carbazole)
[0035]Under nitrogen protection, 9,9'-(5-bromo-1,3-phenylene)bis(9H-carbazole) (5.2g, 10.7mmol), 4-chloromercaptobenzene (1.55g, 10.7mmol ), potassium tert-butoxide (3.6g, 32.1mmol), bis[2-(diphenylphosphino)phenyl]ether (0.54mmol, 0.29g), tridibenzylideneacetone dipalladium (0.54mmol, 0.49 g) Dissolve in 130 mL of toluene. The mixture was refluxed at 125°C for 12 hours. It was then cooled to room temperature and the reaction was quenched with water. Extract with dichloromethane and wash the organic layer with brine. Thereafter, the solvent was spin-dried under reduced pressure, and the crude product was purified by silica gel column chromatography to obtain a white solid 9,9'-(5-((4-chlorophenyl)thio)-1,3-phenylene)bis( 9...
Embodiment 2
[0041] Embodiment 2, structure, preparation and performance of organic electroluminescence device:
[0042] A non-doped organic electroluminescent device A prepared by us, the structure of the device is: ITO / HATCN, thickness 30nm / TAPC, thickness 25nm / the compound containing diphenylsulfone skeleton described in claim 1, thickness 40nm / TmPyPB, thickness 40nm / LiF, thickness 1nm / Al, thickness 150nm;
[0043] A doped organic electroluminescence device B or C structure prepared is: ITO / HATCN, thickness 20nm / TAPC, thickness 25nm / mass fraction 10% or 20% compound CZ-DPS-DMAC:DPEPO, thickness 40nm / TmPyPB, thickness 40nm / LiF, thickness 1nm / Al, thickness 150nm. Among them, HATCN is used as a hole injection layer, and TAPC is used as a hole transport layer; 10-(4-((3,5-bis(9 hydrogen-carbazol-9-yl)phenyl)sulfonyl)phenyl)-9 ,9-Dimethyl-9,10-dihydroacridine was used as the light-emitting layer; TmPyPB was used as the electron-transporting layer.
[0044] Preparation steps of the devic...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com