A semiconductor single crystal silicon growth device

Abstract

The invention discloses a semiconductor single crystal silicon growth device, which belongs to the field of semiconductor manufacturing. A semiconductor single crystal silicon growth device includes a single crystal silicon furnace body, and a graphite heater and a silicon melting furnace are fixedly installed in the single crystal silicon furnace body. The direction-adjusting adsorption cylinder between the crucibles can be used for isolation by adjusting the direction of the adsorption cylinder, so that SiO gas cannot be close to the graphite heater, thereby reducing the generation of carbon monoxide, and through X-type zeolite molecular sieves, microporous one-way adsorption plates and reflux With the cooperation of the air pump group, the mixed airflow inside the monocrystalline silicon furnace body can be adsorbed and circulated. While effectively removing carbon monoxide, the airflow around the crystalline silicon can be increased to form convection with the incoming argon gas, and the generated Carbon monoxide is dispersed and isolated to reduce carbon generation, reduce carbon pollution to crystalline silicon, improve the preparation quality of single crystal silicon rods, and then improve its electrical conductivity, reduce rework rates, and improve the economic benefits of its manufacturing.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, more specifically, to a semiconductor single crystal silicon growing device. Background technique [0002] A semiconductor refers to a material whose conductivity at room temperature is between that of a conductor and an insulator. Semiconductor raw materials generally include elements such as silicon, germanium, selenium, and tin oxide, and silicon is the most used element. The semiconductor manufacturing process using silicon as raw material generally includes: polysilicon - zone melting or Czochralski - single crystal silicon rod - rolling, cutting, grinding, polishing - silicon wafer. Among them, the manufacturing process of single crystal silicon rods is also called single crystal silicon growth, and the most commonly used method for single crystal growth is single crystal pulling. [0003] There are many specific processes for pulling single crystals. Commonly used methods inclu...

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Problems solved by technology

During the growth of Czochralski single crystal silicon, the high-temperature quartz cyanide in the single crystal silicon furnace reacts with the graphite heating device to generate SiO and CO. Among them, CO gas is not easy to volatilize, and most of it enters the silicon melt and reacts with molten silicon to produce elemental carbon and CO. SiO, while most of SiO volatilizes from the surface of the melt, and the carbon remains in the molten silicon, and finally enters the crystalline silicon, and the carbon entering the crystalline silicon will pollute the single crystal silicon rod and reduce the conductive quality

[0004] In the prior art, by changing the argon gas outlet of the monocrystalline silicon furnace, the circulating flow path of SiO gas in the furnace is adjusted to reduce the contact range between it and high-temperature graphite components, thereby reducing the generation of CO gas, and achieving a reduction in crystalline silicon The purpose of pollution, but because the high-temperature graphite component is the heat source supply device of the single crystal silicon furnace, due to the diffusivity of the gas, contact with the high-temperature graphite component is inevitable, and the problem of carbon pollution cannot be solved well

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