Preparation method of ATMP-K-doped tin oxide electron transport layer and application of ATMP-K-doped tin oxide electron transport layer in perovskite solar cell
A technology of ATMP-K and electron transport layer, which is applied in the preparation of tin oxide electron transport layer and the application field of perovskite solar cells, can solve the problem of difficulty in preparing high-efficiency perovskite solar cells, unfavorable cell efficiency and stability Insufficient stability, stability, and electrical performance, etc., to reduce interface defects, improve quality, and increase fill factor
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Embodiment 1
[0030] Embodiment 1 (comparative example):
[0031] A method for preparing an undoped tin oxide electron transport layer and its application in perovskite solar cells, comprising the following steps:
[0032]1. The area of ITO is 2cm×2cm. The surface treatment sequence is ultrasonic cleaning with deionized water and isopropanol, then drying with nitrogen, and finally UV ozone on the substrate for 20 minutes;
[0033] 2. Take 250μl SnO 2 Colloid solution (Alfa Aesar (tin (IV) oxide, 15% in H 2 O)) and 750 μl deionized water mixed to SnO 2 Colloid solution dilution.
[0034] 3. Put ITO in the spin coater without any added SnO 2 The colloidal solution was uniformly coated on the ITO surface, spin-coated at a speed of 4000 rpm for 30 seconds, and then annealed in ambient air at 150°C for 30 minutes to obtain an electron transport layer.
[0035] 4. Take 691.5mg of PbI 2 Dissolve in a mixed solvent of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) with a volume r...
Embodiment 2
[0046] The preparation method of the tin oxide electron transport layer of a kind of doping ATMP-K provided by the present invention and its application in the perovskite solar cell comprise the following steps:
[0047] 1. The area of ITO is 2cm×2cm. The surface treatment sequence is ultrasonic cleaning with deionized water and isopropanol, then drying with nitrogen, and finally UV ozone on the substrate for 20 minutes;
[0048] 2. Add 0.22 mg of KOH powder into 10 ml of deionized water, mix 1000 μl of KOH solution with 100 μl of commercially available ATMP aqueous solution (50% volume concentration) to obtain ATMP-K mixed solution;
[0049] 3. Take 250μl SnO 2 Colloid solution (Alfa Aesar (tin (IV) oxide, 15% in H 2 O)) and 750 μl deionized water mixed to SnO 2 Colloid solution dilution. Take 20 μl of the ATMP-K mixed solution obtained in step 2 and add it to the SnO 2 In the colloidal solution, stir until uniform;
[0050] 4. Put the ITO in the spin coater, put the S...
Embodiment 3
[0062] A preparation method of a tin oxide electron transport layer doped with aminotrimethylene phosphoric acid and potassium hydroxide mixed solution (ATMP-K) and its application in perovskite solar cells, comprising the steps of:
[0063] 1. The area of ITO is 2cm×2cm. The surface treatment sequence is ultrasonic cleaning with deionized water and isopropanol, then drying with nitrogen, and finally UV ozone on the substrate for 20 minutes;
[0064] 2. Add 0.22mg KOH powder into 10ml deionized water, mix 1000μl volume of KOH solution with 200μl ATMP solution to obtain ATMP-K solution;
[0065] 3. Take 250μl SnO 2 Colloid solution (Alfa Aesar (tin (IV) oxide, 15% in H 2 O)) and 750 μl deionized water mixed to SnO 2 Colloid solution dilution. Take 20 μl of the ATMP-K solution obtained in step 2 and add to the SnO 2 In the colloidal solution, stir until uniform;
[0066] 4. Put the ITO in the spin coater, put the SnO with ATMP-KOH 2 The colloidal solution was uniformly c...
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