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Preparation method of silicon-based size-controllable beta-Ga2O3 nanowire

A technology of -ga2o3 and nanowires, which is applied in the field of adjusting the diameter of gallium oxide nanowires, can solve the problems of small contact area between film-based detectors and incident light, many internal structural defects, and large leakage current of devices, so it is suitable for popularization and use , Reduce the influence of grain boundaries and defects, and the effect of fast response

Pending Publication Date: 2021-11-16
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

β-Ga 2 o 3 Although the thin film is easy to prepare, due to the existence of internal stress, its internal structure has the disadvantages of many defects and poor compactness, which leads to a large leakage current of the prepared device
And β-Ga 2 o 3 Thin film-based detectors have a small contact area with incident light

Method used

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  • Preparation method of silicon-based size-controllable beta-Ga2O3 nanowire
  • Preparation method of silicon-based size-controllable beta-Ga2O3 nanowire

Examples

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Embodiment 1

[0032] In this embodiment, a 10nm Au catalytic layer is prepared on a single crystal (100) Si substrate. According to the calculation method of the metal purity according to the impurity concentration ratio contained in the metal, high-purity Au with a purity of 99.999% is selected as the electron beam evaporation method. materials; before sputtering, the Au catalytic layer was annealed at 600°C, and then the temperature was raised to 700°C for formal sputtering of Ga 2 o 3 ; 2 o 3 The purity of the target material is 99.99%, and finally it is annealed in situ at 700°C.

[0033] A Si-based β-Ga 2 o 3 A nanowire size-controllable preparation method, comprising the following steps:

[0034] (1) Substrate cleaning and pretreatment:

[0035] Select a single crystal (100) Si substrate with a size of 20 mm × 20 mm and a thickness of 0.5 mm; the substrate is ultrasonicated in deionized water, acetone, absolute ethanol and deionized water for 5 min, and then diluted in Pickling...

Embodiment 2

[0045] This embodiment is basically the same as Embodiment 1, especially in that:

[0046] In this embodiment, a 20nm-thick Au catalytic layer is prepared on a single crystal (100) Si substrate. According to the calculation method of the metal purity according to the impurity concentration ratio contained in the metal, high-purity Au with a purity of 99.999% is selected as the electron beam Evaporated materials; before sputtering, the Au catalyst layer is subjected to 600°C spheroid annealing treatment, and then the temperature is raised to 700°C for formal sputtering of Ga 2 o 3 ; 2 o 3 The purity of the target material is 99.99%, and finally it is annealed in situ at 700°C.

[0047] A Si-based β-Ga 2 o 3 A nanowire size-controllable preparation method, comprising the following steps:

[0048] (1) Substrate cleaning and pretreatment:

[0049] Select a single crystal (100) Si substrate with a size of 20 mm × 20 mm and a thickness of 0.5 mm; the substrate is ultrasonicat...

Embodiment 3

[0059] This embodiment is basically the same as Embodiment 1, especially in that:

[0060] In this embodiment, a 30nm Au catalytic layer is prepared on a single crystal (100) Si substrate. According to the calculation method of the metal purity according to the impurity concentration ratio contained in the metal, high-purity Au with a purity of 99.999% is selected as the electron beam evaporation method. s material. Before sputtering, the Au catalytic layer was spheroidized and annealed at 600°C, and then the temperature was raised to 700°C for formal sputtering of Ga 2 o 3 . Ga 2 o 3 The purity of the target material is 99.99%, and finally it is annealed in situ at 700°C.

[0061] A Si-based β-Ga 2 o 3 A nanowire size-controllable preparation method, comprising the following steps:

[0062] (1) Substrate cleaning and pretreatment:

[0063] Select a single crystal (100) Si substrate with a size of 20 mm × 20 mm and a thickness of 0.5 mm; the substrate is ultrasonicate...

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Abstract

The invention discloses a preparation method of a silicon-based size-controllable beta-Ga2O3 nanowire. The preparation method of the silicon-based size-controllable beta-Ga2O3 nanowire comprises the following steps: firstly, depositing gold (Au) catalyst layers with different thicknesses on a single crystal Si (100) substrate, and carrying out in-situ spheroidizing annealing on the catalyst layers to obtain Au nanoparticles with different sizes; and then carrying out magnetron sputtering to grow beta-Ga2O3 nanowires, and carrying out in-situ annealing to obtain the beta-Ga2O3 nanowires with different sizes. The beta-Ga2O3 nanowire with the advantages of fewer defects, high resistivity, uniformity, compactness and the like can be obtained by regulating and controlling the size of the beta-Ga2O3 nanowire. The beta-Ga2O3 nanowires with different sizes prepared by the method show excellent performance in application to solar-blind ultraviolet detectors, can be applied to missile approaching early warning systems, ultraviolet communication, ultraviolet imaging navigation and the like in the military field, and have wide application prospects in the aspects of automobile exhaust detection, flame detection, fingerprint detection and the like in the civil field.

Description

technical field [0001] The invention relates to a control gallium oxide (Ga 2 o 3 ) The method for nanowire diameter size belongs to the technical field of semiconductor material manufacturing technology. Background technique [0002] Ga 2 o 3 It is an important compound semiconductor material. It has the advantages of good thermal stability, large light absorption coefficient, high chemical stability, high Baligayu value, and low preparation cost. Ga 2 o 3 There are many isomers, which are recorded as α-Ga 2 o 3 , β-Ga 2 o 3 , γ-Ga 2 o 3 , δ-Ga 2 o 3 , ε-Ga 2 o 3 . The difference between them is not only the crystal space type, but also the coordination number of gallium ions in the crystal lattice. Through different preparation methods and special conditions, different phases of Ga 2 o 3 To regulate. In these Ga 2 o 3 Among the isomers, only monoclinic β-Ga 2 o 3 is the steady state phase. β-Ga 2 o 3 It can be converted from other metastable pha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L31/032C23C14/02C23C14/08C23C14/16C23C14/34C23C14/35C23C14/54C23C14/58
CPCH01L21/02381H01L21/02433H01L21/02565H01L21/02603H01L21/02631H01L21/02664H01L21/02667H01L31/032C23C14/35C23C14/08C23C14/5806C23C14/025C23C14/3435C23C14/54C23C14/165
Inventor 黄健顾克云尚艺邓洁刘尊张志洛丁可可张子龙唐可王林军
Owner SHANGHAI UNIV
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