Dual-neuromorphic device based on charge trapping effect and electric double-layer effect and preparation method of dual-neuromorphic device

A technology of charge trapping layer and charge trapping, which is applied in the fields of electronics and materials science, can solve problems such as asymmetry change, conductance nonlinearity, cumbersomeness, etc., and achieve the effects of reducing difficulty, enhancing linearity and symmetry, and simplifying circuits

Pending Publication Date: 2022-02-11
YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE HUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In hardware neuromorphic circuits, the higher the level of integration, the greater the number of individual devices. At this time, it is required to update the weight of a single device as concisely as possible, that is, the easier the "learning" process of the device, the better, otherwise it will become very cumbersome. , which is not conducive to the regulation of large-scale circuits
Updating the weight of neuromorphic devices is generally to apply electrical pulses to the device to change the conductance of the device. However, at present, when using electrical signals to regulate the weight update, the conductance is nonlinear and asymmetrical, and bipolar (positive and negative) must be used. Voltage) pulse and other scientific issues are not ideal; this has both internal and external reasons. The external reasons include the accuracy of the test instrument, the magnitude of the applied pulse amplitude, the pulse frequency and the pulse width, etc., and the common organic thin film field effect transistor Taking memory as an example, the conductance change of the device is related to the degree to which the device traps charge

Method used

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  • Dual-neuromorphic device based on charge trapping effect and electric double-layer effect and preparation method of dual-neuromorphic device
  • Dual-neuromorphic device based on charge trapping effect and electric double-layer effect and preparation method of dual-neuromorphic device
  • Dual-neuromorphic device based on charge trapping effect and electric double-layer effect and preparation method of dual-neuromorphic device

Examples

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Effect test

Embodiment 1

[0033] Example 1, a method of preparing PYPN: This material is synthesized by three-step chemistry. (1) 0.245 mol of potassium carbonate, 20 ml of aniline, and 100 mL of DMF were added to 250 mL of two flasks, and nitrogen was protected, stirred at 0 ° C for half an hour, and then 19 ml of 3-bromopropylene was added to the reaction liquid. After 6 hours, 500 ml of water was added to the reaction liquid and the reaction was completed. Three times were extracted with dichloromethane, the organic phase was collected, dried over anhydrous magnesium sulfate, filtered, and the organic phase solvent was evaporated. Bottles, 15.7 mmol of allyl ionine, 12.1 mmol of 3-bromipapridine, 18.2 mmol of t-butyl sodium, and dried 20 ml toluene were added to the reaction bottle, and nitrogen was protected for 20 minutes, then 14 mg of tetrafluoride Tri-tert-butyl phosphorus and 35 mg of bis (diebenzyl acetone) palladium were rapidly added to the reaction solution, and the air in the reaction liquid ...

Embodiment 2

[0034]Example 2, a method of preparing a PN: Take 2 mmol of allyl aniline, 3 mmol of triethoxysilane and 2.0 mg of Caster catalyst addition to the reaction bottle, under nitrogen protection, reaction liquid heating to 95 ° C reaction 12 Hour. After the reaction, cooled to room temperature, the crude product was separated from the column to obtain the final product PN.

Embodiment 3

[0035] Example 3, a method of preparing DPN: This material was synthesized by two-step chemistry. (1) Take 29.9 mmol of diphenylamine, 59.9 mmol of potassium hydroxide, 45 ml of acetonitrile, added to 100 ml of two flasks, nitrogen protection, and the reaction liquid is mixed for half an hour, and 59.9 mmol of allyl bromine is added to the reaction liquid. Heating was refluxed for 6 hours, and 150 ml of ultrapure water was added to the reaction liquid to end the reaction. The organic phase was extracted with dichloromethane, dried over anhydrous magnesium sulfate, removing the organic solvent, separated by chromatography, to obtain N-allyl-N-phenylniline; (2) Take a 20 ml of Slack Bottles , 2 mmol of N-allyl-N-phenyl ketaniline, 3 mmol of triethoxysilane and 2.0 mg of Caster catalyst were added to the reaction bottle, and under nitrogen protection, the reaction liquid was heated to 95 ° C for 12 hours. . After the reaction, cooled to room temperature, the crude product was separat...

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Abstract

The neuromorphic circuit comprises numerous neuromorphic devices, and at the moment, the more accurate the device weight update (conductivity adjustment and control) is, the better the conciseness is, that is, the difficulty of "learning" is reduced. At present, adjustment and control of weight updating face the scientific problems that conductance is in non-linear / asymmetric change, bipolar electric pulse (positive and negative voltage) adjustment and control must be adopted, and the difficulty of weight updating of a neuromorphic device is increased; according to the invention, a dual-neuromorphic device with a charge capture effect and an electric double-layer effect is prepared, the adjustment and control of unipolar electric pulses on weight updating are realized by utilizing the difference of the adjustment and control rates of the two charge effects on a semiconductor layer, and the two charge effects form a mutual inhibition effect to enhance the linearity and symmetry of conductivity adjustment and control; the problem that weight updating in a neuromorphic circuit is difficult is solved.

Description

Technical field [0001] The present invention relates to the field of electronics and material learning, and more particularly to a double neuromete device based on charge capture effect and a two-layer effect, a preparation method and application thereof. Background technique [0002] The conventional electronic chip is more than a silicon wafer as a substrate, which is difficult to apply in a wearable, implanted electronic field. Flexible electronic devices have the advantages of bent, superior, light, easy to carry, and easy integration. [0003] The traditional "von. Nogan" calculation structure is limited by the storage unit and the calculation processing unit, which has a problem of high power consumption, slow deposition speed, and is inspired by the human brain, and the human brain neurological device is due to its It has the advantages of calculation, efficient, energy-saving, and quickly simulating human brain function, completing the calculation and storage task, andcom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/32G06N3/063
CPCG06F30/32G06N3/063
Inventor 郑朝月李世彬
Owner YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE HUZHOU
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