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Optical PUF as well as preparation method and application thereof

An optical and metal technology, applied in the security field based on PUF, can solve problems such as non-compliance, expensive preparation, nanoparticle distribution adhesion, poor mechanical stability, etc., and achieve density control, high randomness and complexity , good mechanical and thermal stability

Pending Publication Date: 2022-03-01
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the commonly used preparation method of metal nanoparticles is the colloidal metal nanoparticle method. The distribution of the prepared nanoparticles has disadvantages such as adhesion and poor mechanical stability. Other nano-preparation methods such as photolithography technology and nano-printing technology, The preparation is expensive, the process is complicated, and the repeatable process is used, which does not meet the requirements of disordered random optical PUF
Chinese patent CN106119804A discloses a method for self-assembling nanoparticles based on rapid annealing metal thin films. A single-layer metal thin film is used for rapid annealing. The device adopts a combination of water cooling and air cooling, and the Nanoparticles are formed under gas protection, but the nanoparticles formed by this method are simple in structure and uniform in size, and are used in the application of optical PUF based on random nanoparticle structure, and the randomness and complexity are not enough.

Method used

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  • Optical PUF as well as preparation method and application thereof
  • Optical PUF as well as preparation method and application thereof
  • Optical PUF as well as preparation method and application thereof

Examples

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preparation example Construction

[0031] The invention provides a kind of preparation method of optical PUF, comprises the following steps:

[0032] A) depositing the first metal on the substrate to obtain the first metal layer;

[0033] B) depositing a second metal on the first metal layer to obtain a second metal layer;

[0034] C) annealing the composite layer obtained in step B) to form core-shell nanoparticles to obtain an optical PUF.

[0035] In the present invention, the first metal is deposited on the base to obtain the first metal layer.

[0036] In some embodiments of the present invention, the material of the substrate includes at least one of silicon, gallium arsenide, aluminum gallium nitride, gallium nitride, zinc oxide, gallium oxide, indium phosphide and silicon carbide.

[0037] In some embodiments of the invention, the base is composited on a substrate. The substrate can be sapphire. The present invention has no special limitation on the thickness of the substrate.

[0038] In some embo...

Embodiment 1

[0094] Preparation of GaN APD device electrode optical PUF:

[0095] 1) Using MOCVD to epitaxially grow GaN p-i-n structures on sapphire substrates, including 600nm n-GaN layers, 200nm unintentionally doped i-GaN layers, 100nm p-GaN layers, and 20nm p+GaN layers to facilitate the formation of ohmic contacts , to obtain a substrate with a thickness of 500 μm including sapphire;

[0096] 2) Depositing a 2nm titanium material on the p-GaN layer by electron beam evaporation by magnetron sputtering to obtain the first metal layer;

[0097] 3) Depositing an 8nm gold material on the first metal layer by magnetron sputtering to obtain a second metal layer;

[0098] 4) Perform rapid annealing, the annealing temperature is 600°C, the annealing time is 3min, the annealing atmosphere includes oxygen and nitrogen, the volume ratio of oxygen and nitrogen is 1:5; core-shell nanoparticles are formed; the structure is as figure 1 shown;

[0099] 5) Plasma enhanced chemical vapor deposition ...

Embodiment 2

[0106] Preparation of GaAs device electrode optical PUF:

[0107] 1) The GaAs p-i-n structure is epitaxially grown on the sapphire substrate by MOCVD, including a 600nm n-GaAs layer, a 200nm unintentionally doped i-GaAs layer and a 100nm p-GaAs layer to promote the formation of ohmic contacts, and obtain a sapphire substrate with a thickness of 600μm substrate;

[0108] 2) Depositing 5nm titanium material on the p-GaAs layer by magnetron sputtering to obtain the first metal layer;

[0109] 3) Depositing a 10nm gold material by magnetron sputtering on the first metal layer to obtain a second metal layer;

[0110] 4) Perform rapid annealing, the annealing temperature is 620°C, the annealing time is 2min, the annealing atmosphere includes oxygen and nitrogen, the volume ratio of oxygen and nitrogen is 1:4; core-shell nanoparticles are formed;

[0111] 5) Depositing 300nm of gold by magnetron sputtering to obtain a third metal layer for forming an ohmic contact electrode with go...

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Abstract

The invention relates to the technical field of safety based on PUF, in particular to an optical PUF as well as a preparation method and application thereof. The invention provides a preparation method of an optical PUF, which comprises the following steps: A) depositing first metal on a substrate to obtain a first metal layer; b) depositing second metal on the first metal layer to obtain a second metal layer; and C) annealing the composite layer obtained in the step B) to form core-shell nanoparticles, thereby obtaining the optical PUF. By introducing and adopting a rapid thermal annealing method, the core-shell nanoparticles can be randomly and conveniently generated on metal electrodes of different semiconductors, can be seamlessly compatible with a microelectronic technology, and have no negative influence on the electrical performance. The nano-particles formed by the method are controllable in density, have good mechanical stability and thermal stability, have higher randomness and complexity, and can be used as anti-counterfeit labels of electronic chips or electronic devices.

Description

technical field [0001] The present invention relates to the field of PUF-based security technology, in particular to an optical PUF, its preparation method and application. Background technique [0002] Developing unbreakable security tags is critical to ensuring the trusted and traceable security of electronic products, preventing devices from being replaced, modified, tampered with or hacked during the design lifecycle. But standardized mass production brings with it a lot of indistinguishability, and each chip requires a unique identification or label to establish traceability and trustworthiness. [0003] At present, the commonly used preparation method of metal nanoparticles is the colloidal metal nanoparticle method. The distribution of the prepared nanoparticles has disadvantages such as adhesion and poor mechanical stability. Other nano-preparation methods such as photolithography technology and nano-printing technology, The preparation is expensive, the process is ...

Claims

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Application Information

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IPC IPC(8): C23C14/14C23C14/35C23C14/58C23C16/40C23C16/50B82Y30/00B82Y40/00
CPCC23C14/14C23C14/35C23C14/5806B82Y30/00B82Y40/00C23C16/50C23C16/402
Inventor 李倩康健彬苏娟黄锋王丕东万永彪张泰平姚尧
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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