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Application of self-PN junction semiconductor nanomaterial as infrared photoelectric detector

A nanomaterial and electrical detector technology, applied in semiconductor devices, nanotechnology, nanotechnology, etc., can solve the problems of low photoelectric conversion efficiency and large forbidden band width, shorten the forbidden band width, change the recombination mechanism, simplify the Effects of complex synthesis steps

Pending Publication Date: 2022-03-29
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] According to one aspect of the present application, a kind of self-PN junction semiconductor nanomaterial is provided as the application of infrared photodetector, and described self-PN junction semiconductor nanomaterial solves the MO in the prior art (the M is selected from divalent transition metal element Any one of them) has a large band gap, low photoelectric conversion efficiency and only strong absorption of ultraviolet light, etc., and has a good application prospect as a near-infrared photodetector

Method used

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  • Application of self-PN junction semiconductor nanomaterial as infrared photoelectric detector
  • Application of self-PN junction semiconductor nanomaterial as infrared photoelectric detector
  • Application of self-PN junction semiconductor nanomaterial as infrared photoelectric detector

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Embodiment 1

[0109] Embodiment 1—Preparation of self-PN junction semiconductor nanomaterials

[0110] Preparation of ZnO·2.1ZnFe with Average Particle Size of 20nm 2 o 4 Near-infrared self-PN junction (the ratio of each raw material is converted to FeSO 4 ·7H 2 O: Zn(Ac) 2 2H 2 O:N 2 h 4 ·H 2 O: trisodium citrate dihydrate: deionized water = 1.6mmol: 3.2mmol: 20mL: 1.28mmol: 80mL):

[0111] First weigh 1.6mmol of zinc acetate dihydrate (Zn(Ac) 2 2H 2 O), to which 0.8 mmol of ferrous sulfate heptahydrate (FeSO 4 ·7H 2 0), add 40mL deionized water, then, add 0.1858g trisodium citrate dihydrate (0.64mmol), stir until the solution color changes from light yellow to light green (stirring time is 3min), at this time, slowly add 10 mL of N 2 h 4 ·H 2 O (10mol / L) (addition rate is 60 drops / min), after stirring for a period of time (stirring time is 30min, take 25mL of the reaction solution and place it in the inner tank of the reaction kettle, put it into a high-temperature oven at ...

Embodiment 2

[0112] Embodiment 2—Preparation of self-PN junction semiconductor nanomaterials

[0113] Preparation of ZnO·ZnCo with an average particle size of 20nm 2 o 4 Near-infrared self-PN junction:

[0114] First weigh 1.6mmol of zinc acetate dihydrate (Zn(Ac) 2 2H 2 O), to which 0.8mmol of CoSO was added 4 ·7H 2 O, add 40mL deionized water, then add 0.1858g trisodium citrate dihydrate, stir until the solution color changes from light yellow to light green (stirring time is 2min), at this time, slowly add 10mL of N 2 h 4 ·H 2 O (10mol / L) (the addition rate is 60 drops / min), after stirring for a period of time (stirring time is 30min), take 25mL of the reaction solution and place it in the inner tank of the reaction kettle, put it into a high-temperature oven, and the temperature is 180°C. The heating time is 14h. After the reaction was cooled to room temperature, it was alternately washed with absolute ethanol and deionized water three times each, and centrifuged at 10,000 rpm...

Embodiment 3

[0115] Embodiment 3—ZnO 2.1ZnFe 2 o 4 Near-infrared photocurrent response of PN junction

[0116] ZnO 2.1ZnFe 2 o 4 The near-infrared photoelectrochemistry was tested using a CHI660E electrochemical workstation. The standard three-electrode assembly uses a saturated calomel electrode as a reference electrode and a platinum electrode as a counter electrode. ZnO·2.1ZnFe 2 o 4 Nanomaterials are coated on nickel foam as working electrodes. Among them, 0.5M Na 2 SO 4 An aqueous solution is used as the electrolytic solution. First, the working electrode was fully immersed in the electrolyte solution for 20 minutes, and then tested using the electrochemical workstation. After the three-electrode system was in normal operation for 100 seconds, the working electrode was irradiated with a 1208nm laser for a period of time, and the generated photocurrent intensity was observed. Looking at ZnO 2.1ZnFe by switching near-infrared lasers 2 o 4 Response of PN junction to near-inf...

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Abstract

The invention discloses an application of a self-PN junction semiconductor nanomaterial as an infrared photoelectric detector, which is characterized in that the self-PN junction semiconductor nanomaterial is selected from any one of substances with a chemical formula as shown in a formula I; mO * xMQ2O4 is shown as a formula I; wherein M is selected from any one of divalent transition metal elements; q is selected from any one of VIII group elements; x represents the molar ratio of the content of MQ2O4 to the content of MO, and the value range of x is 1-2.5; and the self-PN junction semiconductor nanomaterial is of a two-phase polycrystalline structure containing a heterotype heterojunction. The self-PN junction semiconductor nanomaterial solves the problems that in the prior art, the MO forbidden band width is large, the photoelectric conversion efficiency is not high, only ultraviolet light is strongly absorbed and the like, and the self-PN junction semiconductor nanomaterial has good application prospects as a near-infrared photoelectric detector.

Description

technical field [0001] The application relates to the application of self-PN junction semiconductor nanomaterials as infrared photodetectors, belonging to the technical field of semiconductor nanomaterials. Background technique [0002] As an important part of the electromagnetic spectrum, near-infrared light has a wide range of applications, including military navigation, night vision, aerospace, weapon detection, and civilian optical communications, medical imaging, atmospheric detection, pollution monitoring, and meteorological analysis. The photoelectric effect can be divided into external photoelectric effect and internal photoelectric effect. According to different physical mechanisms, near-infrared photodetectors mainly include detectors based on external photoelectric effect and internal photoelectric effect. Detectors based on the external photoelectric effect are generally vacuum photoelectric devices, such as vacuum phototubes, photomultiplier tubes, and image mul...

Claims

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Application Information

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IPC IPC(8): H01L31/0296H01L31/18B82Y30/00
CPCH01L31/02963H01L31/1828B82Y30/00Y02P70/50
Inventor 杨方杜慧吴爱国李勇
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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