Large-size single crystal diamond epitaxial layer stripping method

A single crystal diamond and epitaxial layer technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of quality reduction and large diamond loss, and achieve the effect of small material loss and high crystal quality.

Pending Publication Date: 2022-04-12
JILIN UNIV +1
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a method for peeling off large-size and high-quality single-crystal diamond films, so as to solve the problems of large diamond loss and quality reduction in the existing peeling technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-size single crystal diamond epitaxial layer stripping method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Deposit a layer of 300nm thick SiO on the surface of the single crystal diamond substrate after simple polishing and cleaning with acetone and ethanol 2 thin film; (2) on SiO 2 Deposit a layer of 400nm metal Cu film on the surface of the film; (3) using laser etching method, the opening window width is 10 μm, and the mask pattern with a fill factor of 80% is transferred to a single crystal diamond substrate deposited with a metal film; ( 3) Use hydrofluoric acid solution to remove SiO at the open window 2 Thin films, SiO under metal patterns 2 The thin film is retained; (4) use aqua regia solution to remove the remaining metal thin film on the diamond substrate to obtain a patterned SiO 2 Mask the diamond substrate. (5) Using microwave plasma chemical vapor deposition method on patterned SiO 2 Homoepitaxial growth of single crystal diamond is performed on the surface of the masked diamond substrate, the microwave power of the first growth stage is controlled to ...

Embodiment 2

[0025] (1) Deposit a layer of SiO with a thickness of 400 nm on the surface of the single crystal diamond substrate after simple polishing and pretreatment with acetone and ethanol. 2 thin film; (2) on SiO 2 Deposit a layer of 500nm metal Al film on the surface of the film; (3) using laser etching method, the opening window width is 10 μm, and the mask pattern with a fill factor of 50% is transferred to a single crystal diamond substrate deposited with a metal film; ( 3) Use hydrofluoric acid solution to remove SiO at the open window 2 Thin films, SiO under metal patterns 2 The thin film is retained; (4) use aqua regia solution to remove the remaining metal thin film on the diamond substrate to obtain a patterned SiO 2 Mask the diamond substrate. (5) Using microwave plasma chemical vapor deposition method on patterned SiO 2 Homoepitaxial growth of single crystal diamond is performed on the surface of the masked diamond substrate, the microwave power of the first growth sta...

Embodiment 3

[0027] (1) Deposit a layer of SiO with a thickness of 400 nm on the surface of the single crystal diamond substrate after simple polishing and pretreatment with acetone and ethanol. 2 thin film; (2) on SiO 2 A layer of 400nm metal Ti thin film is deposited on the surface of the film; (3) using a laser etching method, the opening window width is 10 μm, and the mask pattern with a fill factor of 40% is transferred to a single crystal diamond substrate deposited with a metal thin film; ( 3) Use hydrofluoric acid solution to remove SiO at the open window 2 Thin films, SiO under metal patterns 2 The thin film is retained; (4) use aqua regia solution to remove the remaining metal thin film on the diamond substrate to obtain a patterned SiO 2Mask the diamond substrate. (5) Using microwave plasma chemical vapor deposition method on patterned SiO 2 Homoepitaxial growth of single crystal diamond is performed on the surface of the masked diamond substrate, the microwave power of the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a large-size monocrystal diamond epitaxial layer stripping method, and belongs to the technical field of crystal growth. The method comprises the following steps: depositing a mask material on the surface of a substrate, depositing a protective layer material, etching a mask pattern by laser, obtaining a diamond substrate with a patterned mask material, depositing and growing a diamond epitaxial layer, soaking and stripping and the like. According to the technical scheme, the epitaxially-grown monocrystal diamond film is naturally peeled off due to stress difference in the cooling process, and epitaxially-grown crystals are high in quality, small in material loss and not limited by the material size.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a single crystal diamond film peeling method, in particular to a large-size high-quality single crystal diamond film peeling method. Background technique [0002] Diamond has a bandgap gap of 5.47eV at room temperature and is called a wide bandgap semiconductor. It has extremely high dielectric strength, electron mobility, hole mobility, and saturated electron velocity. It can be operated at high voltage and is suitable for various high-speed equipment. In addition, diamond has the highest thermal conductivity among known materials, and its thermal radiation performance is good. Compared with semiconductors such as Si and GaN, diamond has the highest quality factor and is considered to be one of the most promising candidate materials for future high-power devices, so it is known as the "ultimate semiconductor". [0003] To prepare diamond-based semiconductor devices, it ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/04C30B25/16C30B25/18C30B25/20C30B29/04C30B33/00
Inventor 邹广田李根壮吕宪义王启亮李柳暗谢文良林旺董成威
Owner JILIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap