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Large-size single crystal diamond epitaxial layer stripping method

A single crystal diamond and epitaxial layer technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of quality reduction and large diamond loss, and achieve the effect of small material loss and high crystal quality.

Pending Publication Date: 2022-04-12
JILIN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide a method for peeling off large-size and high-quality single-crystal diamond films, so as to solve the problems of large diamond loss and quality reduction in the existing peeling technology

Method used

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  • Large-size single crystal diamond epitaxial layer stripping method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Deposit a layer of 300nm thick SiO on the surface of the single crystal diamond substrate after simple polishing and cleaning with acetone and ethanol 2 thin film; (2) on SiO 2 Deposit a layer of 400nm metal Cu film on the surface of the film; (3) using laser etching method, the opening window width is 10 μm, and the mask pattern with a fill factor of 80% is transferred to a single crystal diamond substrate deposited with a metal film; ( 3) Use hydrofluoric acid solution to remove SiO at the open window 2 Thin films, SiO under metal patterns 2 The thin film is retained; (4) use aqua regia solution to remove the remaining metal thin film on the diamond substrate to obtain a patterned SiO 2 Mask the diamond substrate. (5) Using microwave plasma chemical vapor deposition method on patterned SiO 2 Homoepitaxial growth of single crystal diamond is performed on the surface of the masked diamond substrate, the microwave power of the first growth stage is controlled to ...

Embodiment 2

[0025] (1) Deposit a layer of SiO with a thickness of 400 nm on the surface of the single crystal diamond substrate after simple polishing and pretreatment with acetone and ethanol. 2 thin film; (2) on SiO 2 Deposit a layer of 500nm metal Al film on the surface of the film; (3) using laser etching method, the opening window width is 10 μm, and the mask pattern with a fill factor of 50% is transferred to a single crystal diamond substrate deposited with a metal film; ( 3) Use hydrofluoric acid solution to remove SiO at the open window 2 Thin films, SiO under metal patterns 2 The thin film is retained; (4) use aqua regia solution to remove the remaining metal thin film on the diamond substrate to obtain a patterned SiO 2 Mask the diamond substrate. (5) Using microwave plasma chemical vapor deposition method on patterned SiO 2 Homoepitaxial growth of single crystal diamond is performed on the surface of the masked diamond substrate, the microwave power of the first growth sta...

Embodiment 3

[0027] (1) Deposit a layer of SiO with a thickness of 400 nm on the surface of the single crystal diamond substrate after simple polishing and pretreatment with acetone and ethanol. 2 thin film; (2) on SiO 2 A layer of 400nm metal Ti thin film is deposited on the surface of the film; (3) using a laser etching method, the opening window width is 10 μm, and the mask pattern with a fill factor of 40% is transferred to a single crystal diamond substrate deposited with a metal thin film; ( 3) Use hydrofluoric acid solution to remove SiO at the open window 2 Thin films, SiO under metal patterns 2 The thin film is retained; (4) use aqua regia solution to remove the remaining metal thin film on the diamond substrate to obtain a patterned SiO 2Mask the diamond substrate. (5) Using microwave plasma chemical vapor deposition method on patterned SiO 2 Homoepitaxial growth of single crystal diamond is performed on the surface of the masked diamond substrate, the microwave power of the ...

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Abstract

The invention discloses a large-size monocrystal diamond epitaxial layer stripping method, and belongs to the technical field of crystal growth. The method comprises the following steps: depositing a mask material on the surface of a substrate, depositing a protective layer material, etching a mask pattern by laser, obtaining a diamond substrate with a patterned mask material, depositing and growing a diamond epitaxial layer, soaking and stripping and the like. According to the technical scheme, the epitaxially-grown monocrystal diamond film is naturally peeled off due to stress difference in the cooling process, and epitaxially-grown crystals are high in quality, small in material loss and not limited by the material size.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a single crystal diamond film peeling method, in particular to a large-size high-quality single crystal diamond film peeling method. Background technique [0002] Diamond has a bandgap gap of 5.47eV at room temperature and is called a wide bandgap semiconductor. It has extremely high dielectric strength, electron mobility, hole mobility, and saturated electron velocity. It can be operated at high voltage and is suitable for various high-speed equipment. In addition, diamond has the highest thermal conductivity among known materials, and its thermal radiation performance is good. Compared with semiconductors such as Si and GaN, diamond has the highest quality factor and is considered to be one of the most promising candidate materials for future high-power devices, so it is known as the "ultimate semiconductor". [0003] To prepare diamond-based semiconductor devices, it ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/04C30B25/16C30B25/18C30B25/20C30B29/04C30B33/00
Inventor 邹广田李根壮吕宪义王启亮李柳暗谢文良林旺董成威
Owner JILIN UNIV
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