Multifunctional foundation and application research composite physical vapor deposition system
A technology of physical vapor deposition and applied research, applied in the field of physical vapor deposition coating equipment, can solve the problems of mismatch of experimental parameters, uneconomical, expensive consumables, etc., to avoid the problem of parameter mismatch, reduce impurities and defects, save cycle and cost effects
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Embodiment 1
[0054] Example 1 Preparation of light and heat absorbing film:
[0055] Select 2 circular planar aluminum targets and connect them through an intermediate frequency magnetron sputtering power supply.
[0056] Select 5 silicon wafers with a smooth surface and 2 stainless steel wafers with a size of 3×5 cm, put them in acetone and absolute ethanol for 15 minutes, respectively, and ultrasonically clean them for 15 minutes, take out the silicon wafers and stainless steel aluminum foil, and blow dry the substrate with nitrogen After ethanol remains on the surface, put it into the reaction chamber 2 quickly, place it on the rotation axis 19 moving up and down, and start vacuuming. Wait until the vacuum degree is less than 5.0×10 -3 Pa, pass through argon gas, adjust the air pressure to 2.0 Pa, and maintain the form of periodic rotation of the rotation axis 19 under a bias voltage of 600 V DC, and perform plasma cleaning for 30 minutes to remove residual impurities and pollution on ...
Embodiment 2
[0059] Embodiment 2 Preparation of conductive film:
[0060] Select 2 circular planar graphite targets and connect them through the intermediate frequency control power supply, and connect the other DC sputtering power supply to the rectangular chromium planar target.
[0061] Select 5 silicon wafers with a smooth surface, 2 stainless steel wafers with a size of 3 × 5 cm, and 1 stainless steel wafer with a size of 40 × 60 cm, and put them into acetone and absolute ethanol for 15 minutes for ultrasonic cleaning respectively, and remove the silicon wafers. sheet and stainless steel aluminum foil, dry the residual ethanol on the surface of the substrate with nitrogen, quickly put it into the reaction chamber 2, place it on the sample holder chassis 9, start vacuuming, and vacuumize the chamber until it is less than 5.0×10 -3 Pa; Introduce high-purity argon gas to stabilize the deposition pressure at 1.0Pa, and perform plasma activation cleaning under the condition of DC bias volt...
Embodiment 3
[0064] Example 3 Preparation of metal nitride thin film:
[0065] The arc chromium target is installed and connected to the arc power supply, and another DC sputtering power supply is connected to the rectangular planar chromium target.
[0066] Select 5 silicon wafers with a smooth surface, 2 stainless steel wafers with a size of 3 × 5 cm, and 2 stainless steel wafers with a size of 40 × 60 cm, and put them into acetone and absolute ethanol for 15 minutes to ultrasonically clean them respectively, and remove the silicon wafers. After drying the remaining ethanol on the surface of the substrate with nitrogen, quickly put it into the reaction chamber 2, place it on the sample holder chassis 9, and start vacuuming until the chamber is vacuumed until it is less than 5.0×10 -3 Pa; Introduce high-purity argon gas to stabilize the deposition pressure at 0.8 Pa, and perform plasma activation cleaning under the condition of DC bias voltage 500V to remove residual impurities and pollut...
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