Method for preparing copper-zinc-tin-sulfur absorption layer by using ionic liquid as solvent
A copper-zinc-tin-sulfur, ionic liquid technology, applied in the device, coating, semiconductor device and other directions of coating liquid on the surface, can solve the problems affecting the efficiency of copper-zinc-tin-sulfur thin film solar cells, the limitation of direct solution spin coating, viscosity Small and other problems, to achieve the effect of short preparation time period, low cost, and reduction of secondary phases
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0025] Embodiment 1 A kind of ionic liquid is used as the preparation method of the copper-zinc-tin-sulfur absorption layer of solvent
[0026] according to figure 1 The technological process, the preparation method comprises the following steps:
[0027] (1) The choline chloride and ethylene glycol with a molar ratio of 1:2 were evenly mixed in a water bath at 80°C to form a clear and transparent liquid, that is, a choline chloride / ethylene glycol deep eutectic solvent.
[0028] (2) after adding 2.0181g copper acetate, 1.2481g stannous chloride dihydrate, 1.3963g zinc acetate dihydrate successively to the choline chloride / ethylene glycol deep eutectic solvent in 10mL step (1), The mixture was uniformly mixed at a water bath temperature of 60° C., and then 3.0777 g of thiourea was added. After uniform mixing, a copper-zinc-tin-sulfur precursor solution with a concentration of 2.2 mol / L was prepared. The obtained precursor solution is as figure 2 As shown in the figure, it ...
Embodiment 2
[0030] Embodiment 2 A kind of ionic liquid is used as the preparation method of the copper-zinc-tin-sulfur absorption layer of solvent
[0031] according to figure 1 The technological process, the preparation method comprises the following steps:
[0032] (1) The choline chloride and ethylene glycol with a molar ratio of 1:2 were evenly mixed in a water bath at 80°C to form a clear and transparent liquid, that is, a choline chloride / ethylene glycol deep eutectic solvent.
[0033] (2) after adding 1.6053g copper acetate, 0.9928g stannous chloride dihydrate, 1.1107g zinc acetate dihydrate successively to the choline chloride / ethylene glycol deep eutectic solvent in 10mL step (1), The mixture was uniformly mixed at a water bath temperature of 60° C., and then 2.4482 g of thiourea was added. After uniform mixing, a copper-zinc-tin-sulfur precursor solution with a concentration of 1.75 mol / L was prepared. The obtained precursor solution is as figure 2 As shown in the figure, it...
experiment example 1
[0035] Experimental Example 1 Property Characterization Test
[0036] (1) X-ray diffraction spectrum and Raman spectrum test
[0037] X-ray diffraction spectrum and Raman spectrum were used to verify the copper-zinc-tin-sulfur absorbing layer film materials prepared in Examples 1 and 2 (Example 1 in the figure is represented by 2.2 mol / L, and Example 2 is represented by 1.75 mol / L).
[0038] Depend on image 3 , Figure 4 It can be seen from the X-ray diffraction spectrum and Raman spectrum of the present example that a copper-zinc-tin-sulfur film has been successfully prepared, and the film has high crystallinity and few secondary phases, indicating that there are fewer defects. At the same time, an increase in the particle size on the film surface was observed, further illustrating the reduction in defects.
[0039] (2) Scanning electron microscope test
[0040]Field emission scanning electron microscopy was used to verify the copper-zinc-tin-sulfur absorbing layer film ...
PUM
| Property | Measurement | Unit |
|---|---|---|
| particle size | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More