Near-infrared luminous magnetic quantum dot as well as preparation method and application thereof

A quantum dot and near-infrared technology, applied in the fields of nanoscience, material chemistry, photochemistry and biomedicine, can solve the problems of short luminescence wavelength, low luminescence efficiency, high toxicity of semiconductors, etc., and achieve excellent magnetic resonance imaging performance and simple experimental steps. , the effect of high longitudinal molar relaxation rate of ions

Pending Publication Date: 2022-07-29
INST OF CHEM CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved in the present invention is to provide a semiconductor nanocrystal with adjustable near-infrared luminous wavelength, high luminous efficiency and magnetic labeling and its preparation method, so as to overcome the high toxicity, short luminous wavelength and low luminous efficiency of existing near-infrared luminous semiconductors. low defect

Method used

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  • Near-infrared luminous magnetic quantum dot as well as preparation method and application thereof
  • Near-infrared luminous magnetic quantum dot as well as preparation method and application thereof
  • Near-infrared luminous magnetic quantum dot as well as preparation method and application thereof

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Effect test

Embodiment 1

[0065] 1.5mmol CuI and 1.5mmol In(CH 3 COO) 3 Mixed in 3 mL of dodecanethiol and 30 mL of octadecene, degassed under vacuum for 20 min, and then degassed at 120 °C for 40 min. The Se source was then added under nitrogen protection. The reaction mixture was heated at 200°C and reacted under nitrogen protection. Specifically, the near-infrared luminescence peak position, luminescence half-peak width and luminescence intensity could be modulated by adjusting the reaction temperature, reaction time and Cu:In ratio. After the reaction was completed, the temperature was lowered, and after purification, it was dispersed in toluene.

[0066] figure 1 The stoichiometric ratio CuInSe obtained for the reaction for 40 minutes 2Transmission electron microscope (TEM) photo of quantum dots.

[0067] figure 2 is the resulting stoichiometric ratio CuInSe 2 The optical properties of quantum dots were characterized, indicating that the near-infrared luminescence peak (a), emission peak w...

Embodiment 2

[0069] 1.5 mmol CuCl and 1.5 mmol In (CH 3 COO) 3 Mixed in 3 mL of n-decanethiol and 30 mL of octadecene, degassed under vacuum for 20 min, and then degassed at 120 °C for 40 min. The Se source was then added under nitrogen protection. The reaction mixture was heated at 200°C and reacted under nitrogen protection. Specifically, the near-infrared luminescence peak position, luminescence half-peak width and luminescence intensity of Cu-In-Se could be modulated by adjusting the reaction time and the ratio of Cu:In. After the reaction was completed, the temperature was lowered, and after purification, it was dispersed in cyclohexane.

Embodiment 3

[0071] 1.5mmol AgNO 3 and 1.5 mmol In (CH 3 COO) 3 Mixed in 3 mL of alkyl mercaptan and 30 mL of octadecene, degassed under vacuum for 20 min, and then degassed at 120 °C for 40 min. The Se source was then added under nitrogen protection. The reaction mixture was heated at 200°C and reacted under nitrogen protection. Specifically, the near-infrared luminescence peak position, luminescence half-peak width and luminescence intensity of Ag-In-Se quantum dots could be modulated by adjusting the reaction time and the Ag:In ratio. . After the reaction was completed, the temperature was lowered, and after purification, it was dispersed in cyclohexane.

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Abstract

The invention discloses a quantum dot (semiconductor nanocrystal) with near-infrared luminescence and magnetism as well as a preparation method and application of the quantum dot. The quantum dot has a core-shell crystal structure, the core is a semiconductor crystal material which is near-infrared luminous and does not contain heavy metals, the shell is a magnetic broad-band gap semiconductor crystal material which does not contain heavy metals, the conditions are mild, the process is simple, the operation is simple and convenient, the cost is low, and the method is flexible. The size of the nanocrystal is 2-15nm, the near-infrared emission peak position is within the range of 650-1500nm and can be randomly modulated according to the size and composition, and the highest near-infrared luminous efficiency reaches 80%. Wherein the magnetic ions in the crystal lattice of the shell layer are stably marked, the content of the magnetic ions can be randomly modulated, and the composite material has high longitudinal magnetic resonance relaxation rate and excellent magnetic resonance imaging performance, and can be used for constructing a near-infrared optical / magnetic resonance imaging multifunctional probe for near-infrared luminescence / magnetic resonance multi-mode biomedical imaging.

Description

technical field [0001] The technical field of the present invention is material chemistry, nanoscience, photochemistry and biomedicine, and particularly relates to a near-infrared luminescent magnetic quantum dot (magnetic semiconductor nanocrystal) and a preparation method and application thereof. Background technique [0002] Quantum dots (semiconductor nanocrystals), as a new type of light absorbing and emitting materials, are widely used in optoelectronics and biomedicine due to their unique electronic and optical properties. In addition, due to the advantages of broadband excitation and narrowband emission, continuously adjustable emission color, high extinction coefficient, high fluorescence efficiency, high luminescence stability, and large Stokes shift, it can be used in high-sensitivity, high-throughput in vitro and in vivo biological detection. The prospects are bright (Journal of the American Chemical Society, 2011, 133, 1176; Chemical Reviews, 2016, 116, 10731; A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88B82Y20/00B82Y30/00B82Y40/00A61K49/00A61K49/06
CPCC09K11/883B82Y20/00B82Y30/00B82Y40/00A61K49/0002A61K49/0019A61K49/0067A61K49/06
Inventor 荆莉红李颖颖高明远
Owner INST OF CHEM CHINESE ACAD OF SCI
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