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Method for preparing polarization-insensitive semiconductor optical amplifier

An optical amplifier and semiconductor technology, applied in semiconductor/solid-state device manufacturing, optics, nonlinear optics, etc., can solve problems such as increasing the difficulty of SOA+SSC and device cost, coupling alignment, and self-alignment difficulties

Inactive Publication Date: 2003-06-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] 2) Series-parallel connection of several devices: This method uses component assembly to achieve polarization insensitivity, but in the process of series-parallel connection of several devices, self-alignment between them is relatively difficult, and there is no improvement in the structure of the device itself
However, NEC currently uses narrow strip width selective growth SOA. Because the strip width of the dielectric film is very narrow (0.75 μm), electron beam exposure (e-beam) must be used, which is expensive, and pure SOA has a very narrow strip width. , it is difficult to align with the fiber coupling, and its light output power is small
Usually, both ends of the narrow-strip width SOA are integrated with the mode spot converter, and a one-time SOA and SSC integrated structure is adopted. In order to reduce the absorption of the SSC region, a large wavelength shift must be obtained. According to the characteristics of narrow-strip width selective growth, the band The large tensile strain makes the crystal quality of the SSC region of the bulk material worse, and in order to obtain a large wavelength shift, it is necessary to use the normal pressure MOVPE growth method, which brings higher requirements for the MOVPE growth method
In addition, in order to obtain a one-time integrated SOA+SSC device, the outer wedge-shaped photolithography plate of the pure SSC area has particularly stringent requirements for plate making.
All of these increase the difficulty and device cost of one-time integration of SOA+SSC

Method used

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  • Method for preparing polarization-insensitive semiconductor optical amplifier
  • Method for preparing polarization-insensitive semiconductor optical amplifier
  • Method for preparing polarization-insensitive semiconductor optical amplifier

Examples

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Effect test

Embodiment 1

[0043] Embodiment 1: Polarization-insensitive SOA+integration of all active SSCs

[0044] The polarization insensitive semiconductor optical amplifier prepared by the present invention is integrated with active SSC, and its preparation steps include as follows:

[0045] 1) On the n-type indium phosphorus substrate, a layer of SiO with a thickness of 100-150 nanometers (nm) is grown by plasma chemical vapor deposition technology 2 Dielectric film;

[0046] 2) Prepare a photoresist plate by using ordinary ultraviolet exposure technology;

[0047] 3) Use the photolithography plate prepared in step 2 to photolithography and etch the substrate in step 1 to obtain the corresponding SiO 2 The dielectric film pattern of the mask, such as figure 1 shown;

[0048] 4) Using the low-pressure MOVPE narrow-strip growth technology, sequentially grow an n-type indium phosphide (InP) buffer layer, an undoped indium gallium arsenide phosphide (InGaAsP) active layer, and a p-type InP capping...

Embodiment 2

[0057] The preparation method of this kind of device is basically the same as that of Embodiment 1, except that the wavelength drift needs to be further increased when the InGaAsP quaternary layer is grown in a narrow strip width to reduce the absorption of the passive SSC part; in addition, the electrode pattern is changed to make the SSC Partially covered with electrodes. Embodiment 3: Polarization-insensitive SOA+active SSC+passive SSC+EA integration:

Embodiment 3

[0057] The preparation method of this kind of device is basically the same as that of Embodiment 1, except that the wavelength drift needs to be further increased when the InGaAsP quaternary layer is grown in a narrow strip width to reduce the absorption of the passive SSC part; in addition, the electrode pattern is changed to make the SSC Partially covered with electrodes. Embodiment 3: Polarization-insensitive SOA+active SSC+passive SSC+EA integration:

[0058] Since the integration of the electroabsorption modulator is involved here, the preparation steps are slightly different from the previous two examples, and the specific steps are as follows:

[0059] 1. Use figure 1 Photolithography, etch the n-InP substrate by photolithography to form a dielectric film mask pattern with smooth and flat edges;

[0060] 2. Perform a narrow strip width epitaxy on the chip etched by photolithography in step 1, including n-InP buffer layer, undoped InGaAsP active and passive waveguide l...

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Abstract

The preparing method includes following steps. (1) The dielectric film is grown up on the indium phosphor substrate by using the technique of the plasma chemical vapor phase deposition. (2) The photo etching techinque makes the mask patterns. (3) The n type indium phosphor buffer layer, the active layer and the p type indium phosphor cover layer are grown up in sequence on the indium phosphor substrate being etched. (4) The dielectric layer is removed by the etching solution. (5) Two times of epitaxy of the said cover layer and the contact layer. (6) The bar structure of the part is obtianed by etching process. (7) Third time of epitaxy of the window area. (8) Forming the bar structure. (9) The silicon dioxide insulation is grown up. (10) The window of the silicon dioxide is made. (11) The electrode is prepared. (12) Cleavage, the media optical films are coated on the two ends of the parts.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to the integration of polarization-insensitive semiconductor optoelectronic devices (including semiconductor optical amplifiers and electro-absorption modulators) and an active mode spot-size converter (spot-size-converter, SSC), in particular to polarization-insensitive A method for preparing a sensitive semiconductor optical amplifier used as an optical switch. Background technique [0002] With the continuous development of optical fiber transmission bandwidth (it is now proved that its theoretical limit is (1260-1620) nm) and people's urgent demand for broadband networks, optical networks with optoelectronics as information carriers are gradually emerging and developing. The requirements for optoelectronic devices for receiving, amplifying and modulating light are also gradually strengthened. Polarization is one of the important intrinsic properties of optoelectronics. How...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/39H01L21/027
Inventor 张瑞英董杰王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI