Porous membrane semiconductor optical electrode having visible light response and photoelectrochemical reaction equipment and preparation thereof

A thin-film semiconductor and porous thin-film technology, which is applied in the field of thin-film semiconductor photoelectrodes, can solve the problems of reduced solar energy conversion efficiency and high conduction band energy level, and achieve the effects of improving solar energy conversion efficiency, reducing diffusion distance, and ensuring charge mobility.

Inactive Publication Date: 2004-11-03
NANJING UNIV
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  • Summary
  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

However, these simple oxide semiconductors that respond to visible light have the disadvantage that the energy level of the conduction band is too high. In order to allow the reaction of reducing protons to hydrogen with electrons (the electrons are generated in the conduction band) to proceed, a large amount of electric energy must be input from the outside. This also means that the conversion efficiency of solar energy is reduced.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0068] The preparation method of the semiconductor film is as follows: the metal precursor is dispersed in the solvent by the citric acid complex method, the sol-gel method, etc., and the method of thermal decomposition after coating is carried out, and the fine particles of the semiconductor are prepared in advance by the solid phase method. A method of making a paste, applying it, and then thermally decomposing it (firing), etc. If the melting point is low, the solid phase method is also possible. The coating method can be printing, glue-spinning method, thermal spraying method, etc.

[0069] In principle, the firing temperature must be the decomposition temperature of the above-mentioned mixed organic matter, but because the substrate has heat resistance, it is desirable to be below the heat-resistant temperature (about 600 degrees) if it is tin oxide-based conductive glass. In order to promote the decomposition of organic matter, firing in oxygen is also effective.

[00...

example 1

[0082] (1) BiVO 4 Electrode Preparation

[0083] Bi(hex) 3 ((hex) 3 : the fluorescence group hexachloro-6-carboxyl-fluorescein) is dissolved and mixed into vanadyl acetylacetonate (VO(acac) 2 ). After stirring for one hour, concentrate on the evaporator, add 50vol% polyethylene glycol, and apply the resulting solution on the conductive glass (F-SnO 2 , 10 ohms / cm 2 ), burned at a temperature of 500° C. in air for one hour, and so repeated three times, the film thickness was about 0.3 microns, and observed by SEM, it can be seen that a film with large pores of about 100-200 nm was formed. Formation of monoclinic BiVO as determined by XRD 4 .

[0084] (2) Evaluation of electrodes

[0085] Connect this electrode to an electrostatic potentiometer, use Ag / AgCl as the reference electrode, use Pt as the counter electrode, and use 0.1mol / L Na 2 SO 4 The decomposition reaction of water is carried out in aqueous solution. While changing the bias voltage, while irradiating mon...

example 2

[0087] (1) AgNbO 3 Electrode preparation

[0088] AgNO dissolved in methanol 3 Mix with Nb alkoxide dissolved in ethanol according to the chemical ratio of 1:1, after stirring, add 50vol% polyethylene glycol, and apply the obtained solution on the conductive glass by scraper coating method, in the air Burn at a temperature of 550°C for one hour, and repeat this 5 times, the film thickness is about 0.2 microns, and AgNbO is formed according to XRD 3 ,

[0089] (2) Evaluation of electrodes

[0090] The evaluation method of the electrode is the same as that of Example 1. The open circuit voltage is submerged in the redox peak of silver, which is difficult to observe and is below 0.2V. In the energy band calculation using density functional (CASTEP), the conduction band uses the d orbital of Nd, therefore, the conduction band and WO 3 , Fe 2 o 3 The comparison is negative. As a result of the measurement, at 400nm, when the relative open circuit voltage is 0.5V, the quantum...

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PUM

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Abstract

A porous film semiconductor photoemitter with visible light response formed by a porous structure complex metal oxide semiconductor is used in photoelectric chemical cell reacted in the energy storage. The said photoemitter is composed of more than two kinds of elements: an is one of Bi, Ag, Cu, Sn, Pb, V, In, Pr Cr and Ni, B is selected from Ti, Nb, Ta, Zr, Hf, Mo, W, Zn, Ga, In, Ge and Sn. This invented simple device alters the visible light such as the sunlight to hydrogen chemical energy effectively, even if the photoemitter has very low quantum absorptivity yet it will approach to 100% so long as the filming method is perfect.

Description

1. Technical field [0001] The present invention uses a thin-film semiconductor photoelectrode with a high-efficiency porous structure in a photoelectrochemical cell (this photoelectrochemical cell mainly converts light energy such as sunlight into chemical energy such as hydrogen), and uses the photoelectrochemical cell to decompose water. . 2. Technical background [0002] The effective use of renewable energy such as solar energy is very important, especially the technology of using solar energy to split water to produce hydrogen is a very necessary technology for the early practical application of hydrogen fuel cell vehicles and the acceleration of its popularization. However, it is very difficult to realize a cheap and efficient light energy conversion mechanism. The following technologies for splitting water using sunlight are listed below. [0003] First, in the solar cell-electrolysis mechanism, it is impossible to produce hydrogen cheaply even in combination with el...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/04H01M4/86H01M8/0656H01M14/00
CPCY02E60/50Y02E10/50
Inventor 邹志刚陈延峰叶金花
Owner NANJING UNIV
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