Method for preparing semiconductor quantum-point material by low-temperature solvent method

A quantum dot material and semiconductor technology, which is used in the manufacture of semiconductor devices, semiconductor lasers, and semiconductor/solid-state devices, etc., can solve the problems of harsh reaction conditions, reaction equipment, expensive solvents, and high reaction temperature, and achieve low prices, cost reduction, Low toxicity effect

Inactive Publication Date: 2004-12-08
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although low-toxic inorganic salt precursors are used in this reaction, expensive solvents are still used, the reaction temperature is high, and the reaction conditions and required reaction equipment are harsh.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Add 0.267g of cadmium acetate, 1ml of oleic acid, and 4ml of diphenyl ether into a 150ml three-necked flask, heat to 170°C, stir to dissolve and keep at 170°C for 30 minutes, cool down to room temperature to obtain precursor A.

[0019] Precursor B was obtained by dissolving 0.158 g of metal selenium powder in 2 ml of trioctylphosphine under ultrasonic conditions.

[0020] Mix precursor A and precursor B to obtain reaction stock solution C.

[0021] Add 10ml of diphenyl ether into the three-necked flask, protect it with nitrogen, heat it to 170°C, and quickly drop the reaction stock solution C under the condition of vigorous stirring to start the reaction. React for 3 minutes to 45 minutes, and take samples for performance testing.

[0022] React for 3 minutes to obtain a particle size of 1.8nm, its ultraviolet absorption peak is located at 472nm, and the fluorescence emission peak wavelength is located at 500nm; react for 11 minutes, obtain a particle size of 2.1nm, i...

Embodiment 2

[0024] Add 0.267g of cadmium acetate, 1ml of oleic acid, and 4ml of diphenyl ether into a 150ml three-necked flask, heat to 140°C, stir to dissolve and keep at 140°C for 30 minutes, cool down to room temperature to obtain precursor A.

[0025] Precursor B was obtained by dissolving 0.158 g of metal selenium powder in 2 ml of trioctylphosphine under ultrasonic conditions.

[0026] Mix precursor A and precursor B to obtain reaction stock solution C.

[0027] Add 10ml of diphenyl ether into the three-necked flask, protect it with nitrogen, heat it to 140°C, and quickly add the reaction stock solution C dropwise under the condition of vigorous stirring to start the reaction. The reaction was carried out for 8 minutes to obtain a particle size of 2.3 nm. The ultraviolet absorption is located at 510nm, and the fluorescence emission peak wavelength is 532nm. The obvious ultraviolet absorption peak, high fluorescence intensity and narrow half-peak width of fluorescence emission indi...

Embodiment 3

[0029] Add 0.228g of cadmium chloride, 1ml of oleic acid, and 4ml of diphenyl ether into a 150ml three-necked flask, heat to 110°C, stir to dissolve and keep at 110°C for 30 minutes, cool down to room temperature to obtain precursor A.

[0030] Precursor B was obtained by dissolving 0.158 g of metal selenium powder in 2 ml of trioctylphosphine under ultrasonic conditions.

[0031] Mix precursor A and precursor B to obtain reaction stock solution C.

[0032] Add 10ml of diphenyl ether into the three-necked flask, under nitrogen protection, heat to 110°C, and quickly drop the reaction stock solution C under the condition of vigorous stirring to start the reaction. The reaction was carried out for 45 minutes to obtain a particle size of 1.8 nm. The ultraviolet absorption peak is located at 476nm, and the fluorescence emission peak wavelength is 500nm. The obtained CdSe quantum dot material has strong fluorescence effect and uniform size distribution.

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Abstract

In the invention, inorganic salt is as raw material including cadmium acetate, cadmium chloride or cadmium oxide. Solvent in high boiling point and strong polarity is selected as reaction medium. Surface-active agents: oleic acid, phospholipid, lecithin and polyvinyl alcohol pyridine are selected to modify surface of quantum point. Dispersed single material of semiconductor quantum point in adjustable size can be obtained through reaction in glass flask under lower reaction temperature 1l0 deg.C - 170 deg.C. Features of the invention are: easy to obtain all raw materials, low cost and toxicity, even dispersed single material of semiconductor quantum point in adjustable size.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor quantum dot material, in particular to a method for preparing a semiconductor quantum dot material by a low-temperature solvent method. It belongs to the field of material preparation. Background technique [0002] Quantum dots specifically refer to semiconductor nanoparticles whose radius is smaller than or close to the exciton Bohr radius. Their unique quantum size effect and surface effect make them ideal fluorescent chromophores for wavelength-brightness multi-channel transmission systems. Compared with traditional organic fluorescent dyes, semiconductor quantum dots with uniform size have a narrow emission spectrum and have size "tuning" characteristics. Different quantum dots can be excited with a single wavelength, with high fluorescence quantum yield and good stability. advantages such as biocompatibility. Moreover, in recent years, the rich optical properties of quantum dots and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00H01L21/00H01L33/00H01S5/00
Inventor 贺蓉古宏晨
Owner SHANGHAI JIAO TONG UNIV
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