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Preparation method of nitrogen doped composite semiconductor photocatalyst

A compound semiconductor and photocatalyst technology, applied in chemical instruments and methods, physical/chemical process catalysts, chemical/physical processes, etc., can solve the problems of unfavorable industrialization, poor thermal stability, long reaction time, etc. Catalytic performance, improved adsorption performance, and low-cost manufacturing effects

Inactive Publication Date: 2005-07-06
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of these methods have complicated processes, long reaction time, and poor thermal stability, which are not conducive to industrialization and popularization.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 3.53g fumed white carbon black (i.e. nano-SiO 2 , particle size less than 10nm) ultrasonically dispersed in 530ml of pure water, adjust the pH value to 2.5 with 36% to 38% hydrochloric acid (analytical grade), slowly add 1000ml of 10% tetra-n-butyl titanate ethanol solution dropwise under vigorous stirring, Then aging and reacting for 3 hours, filtering, the resulting solid was washed with deionized water, and dried in vacuum to obtain hydrated SiO 2 / TiO 2 Powder. 2.0g of the prepared hydrated SiO 2 / TiO 2 Put the powder into a porcelain boat and push it into a high-temperature corundum tube furnace. The two ends of the tube furnace are sealed but there are gas inlet and outlet ports. A mixture of ammonia and argon is introduced from the air inlet, the ratio of ammonia to argon is 2:1, and the flow rate of ammonia is controlled to be 0.1m 3 / h, after the gas flow rate is stable, start heating to 450 ° C, the heating rate is about 100 ° C / min, so that the nitroge...

Embodiment 2

[0022] 3.53g fumed white carbon black (i.e. nano-SiO 2 , particle size less than 10nm) ultrasonic dispersion in 530ml of pure water, adjust the pH value to 2.0 with 36% ~ 38% hydrochloric acid (analytical grade), slowly add 1000ml of 10% tetra-n-butyl titanate ethanol solution dropwise under vigorous stirring, Then aging and reacting for 2 hours, filtering, the resulting solid was washed with deionized water, and dried in vacuum to obtain hydrated SiO 2 / TiO 2 Powder. 2.0g of the prepared hydrated SiO 2 / TiO 2 Put the powder into a porcelain boat and push it into a high-temperature corundum tube furnace. The two ends of the tube furnace are sealed but there are gas inlet and outlet ports. A mixture of ammonia and argon is introduced from the air inlet, the ratio of ammonia to argon is 1:1, and the flow rate of ammonia is controlled to be 0.05m 3 / h, after the gas flow rate is stable, start heating to 400 ° C, the heating rate is about 100 ° C / min, so that the nitrogen d...

Embodiment 3

[0024] Embodiment three: the preparation method step in the present embodiment is basically identical with embodiment one, difference is:

[0025] The ratio of ammonia gas to argon gas mixture is 4:1, and the flow rate of ammonia gas is controlled to be 0.2m 3 / h, the nitrogen doping reaction temperature is 500 ° C, the reaction time is 4 hours, and the photocatalyst SiO 2 / TiO 2-X N X Powder.

[0026] The above sample was observed by a transmission electron microscope (TEM), and its average particle size was 20nm, and analyzed by X-ray photoelectron spectroscopy (XPS), its nitrogen content was 1.51% by mass.

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Abstract

This invention relates to a semi-conductor light catalyzer process method by use of non-metal ion blending, which belongs to chemistry compound light catalyzer materials process technique field. The method adopts silicon dioxide and butyl titanate ethanol solution as main materials to generate front parts before reaction SiO2 / TiO2, and then airs mixture gas with ammonia gas and argon gas for nitrogen blending reaction to process the semi-conductive light catalyzer SiO2 / TiO2-xNx powder.

Description

Technical field: [0001] The invention relates to a preparation method of a semiconductor photocatalyst doped with non-metal ions. Specifically, it is a preparation method of a photocatalytic material in which nitrogen is doped into a compound semiconductor of silicon oxide and titanium oxide, and belongs to the technical field of chemical compound photocatalytic material manufacturing. Background technique: [0002] Photocatalytic technology is an environmentally friendly new catalytic technology in the 21st century. Under the action of light, the strong oxidizing groups generated on the surface of semiconductor materials are used to oxidize and degrade most toxic and harmful organic substances, as well as inorganic harmful substances such as nitrogen oxides and sulfur oxides, and finally achieve the purpose of efficient treatment; and can make the material The surface produces bactericidal, self-cleaning and super-hydrophilic functions. This technology has no secondary po...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J21/06B01J21/14
Inventor 施利毅谢晓峰张剑平贾桂铃孙召梅饶薇薇方建慧
Owner SHANGHAI UNIV
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