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Process for preparing Cu-In-Ga-Se or Cu-In-Ga-S film solar battery obsorbing layer

A solar cell, copper indium gallium sulfide technology, applied in coatings, circuits, electrical components, etc., can solve the problems of high energy consumption and high equipment requirements, and achieve low energy consumption, high photoelectric conversion efficiency, selenization or vulcanization methods simple effect

Inactive Publication Date: 2006-01-11
TSINGHUA UNIV
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  • Summary
  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The solid-state source selenization or vulcanization method adopted in the prior art, such as the synergistic heating selenization or vulcanization method of the contact heat source and light irradiation in the Chinese patent publication CN1547239A, must always maintain sufficient selenium or sulfur atmosphere during the selenization or vulcanization process , high requirements on equipment and large energy consumption

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Magnetron sputtering was used to deposit 0.8 μm thick metal Mo on ordinary soda-lime glass, and then double targets (alloy target with a CuIn ratio of 0.9:1 and an alloy target with a CuGa ratio of 0.9:1) were sputtered simultaneously on the Mo film Deposit to form a copper indium gallium metal prefabricated layer (1.0 μm). Put the substrate on which the copper indium gallium metal prefabricated layer is deposited into the solid-state source selenization heat treatment vacuum chamber, and use a mechanical pump and a diffusion pump to evacuate to a level of 3×10 -3 At Pa, the solid-state selenium source is evenly heated to 250°C at a heating rate of 25°C / min, and kept at a constant temperature for 10 minutes to generate saturated selenium vapor, evaporate a layer of selenium on the surface of the metal prefabricated layer, and then heat the metal by irradiating the halogen tungsten lamp The prefabricated layer is rapidly and uniformly heated to 550°C at a heating rate of...

Embodiment 2

[0023] Magnetron sputtering is used to deposit 0.8 μm thick metal Mo on ordinary soda-lime glass, and CuInGa alloy target single target (Cu:In:Ga=1:0.7:0.3) is sputtered and deposited on the Mo film to form copper indium gallium metal Prefabricated layers (0.8 μm). Put the substrate on which the copper indium gallium metal prefabricated layer is deposited into the solid-state source selenization heat treatment vacuum chamber, and use a mechanical pump and a diffusion pump to evacuate to a level of 3×10 -3 At Pa, the solid selenium source is evenly heated to 180°C at a heating rate of 20°C / min, and kept at a constant temperature for 5 minutes to generate saturated selenium vapor, evaporate a layer of selenium on the surface of the metal prefabricated layer, and then heat the metal by irradiating the halogen tungsten lamp The prefabricated layer is rapidly and evenly heated to 400°C at a heating rate of 180°C / min, and kept at a constant temperature for 10 minutes to finally obta...

Embodiment 3

[0025] Except that the solid-state selenium source in the embodiment 1 was replaced by the solid-state sulfur source, the others were the same as in the embodiment 1, and finally a copper indium gallium sulfur solar cell absorption layer was obtained.

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Abstract

This invention relates to a preparation method for Cu In Ga Se or CuInGaS solar energy battery absorption layer, which prepares a CuInGa metal prefabricated layer with a vacuum magnet control sputter method on a NaCa glass Mo substrate then to be pre-evaporated in a thermal process vacuum chamber to be selenized or sulfurized characterizing that the target material applied in the vacuum sputter method is CuIn alloy or CuGa alloy or CuInGa alloy, the selenization or sulfurization is carried in vacuum, which rises the temperature of Se or S source to make them evaporate to spread a layer of Se or S on the prefabricated surface to be radiated by a halogen-tungsten lamp to generate selenized or sulfurized chemical reaction to get the CuInGse or GuInGs absorption layer.

Description

technical field [0001] The invention relates to a preparation technology of a semiconductor thin film, in particular to a preparation method of an absorbing layer of a copper indium gallium selenide or copper indium gallium sulfur thin film solar cell, and belongs to the technical field of photoelectric materials and new energy sources. Background technique [0002] The compound semiconductor copper indium selenide (CuInSe) with chalcopyrite structure 2 , referred to as CIS) or copper indium gallium selenide (Cu(In,Ga)Se) doped with gallium 2 , referred to as CIGS) miscible crystals are direct band gap materials, and thin-film solar cells using it as a light-absorbing layer are considered to be one of the most promising third-generation compound photovoltaic cells, which not only have low manufacturing costs, high photoelectric conversion Efficiency, and has outstanding advantages such as strong radiation resistance and stable performance. The structure of copper indium ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/20C23C14/06C23C14/34C23C14/24
CPCY02P70/50
Inventor 张弓庄大明丁晓峰韩东麟查杉
Owner TSINGHUA UNIV
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