Polymer, resist composition and patterning process

a technology of composition and polymer, applied in the field of polymer, resist composition and patterning process, can solve the problems of pattern collapse, difficult use as resist base resin, and the likelihood of polymer swelling during development, and achieve the effect of reducing the influence of swelling due to immersion, low affinity, and high affinity
US20070099114A1Active Publication Date: 2007-05-03SHIN ETSU CHEM IND CO LTD
13 Cites 19 Cited by

Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
SHIN ETSU CHEM IND CO LTD
Publication Date
2007-05-03

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A polymer of which dissolution rate in an alkaline developer increases under the action of acid comprises recurring units having formulae (1) and (2) wherein R1, R2, and R4 are H or methyl, R3 is difluoromethyl or trifluoromethyl, and X is tertiary alkyl. A resist composition comprising the polymer has a high sensitivity and resolution, decreased pattern collapse during development, and minimized MEF and is best suited as micropatterning material for the VLSI manufacture.
Need to check novelty before this filing date? Find Prior Art

Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2005-316400 filed in Japan on Oct. 31, 2005, the entire contents of which are hereby incorporated by reference.

[0002] This invention relates to (1) novel polymers suitable for use as the base resin in resist compositions for lithographic micropatterning, (2) resist compositions comprising the same, and (3) a patterning process using the resist compositions. BACKGROUND OF THE INVENTION

[0003] In the drive for higher integration and operating speeds in LSI devices, the pattern rule is made drastically finer. The rapid advance toward finer pattern rules is grounded on the development of a projection lens with an increased NA, a resist material with improved performance, and exposure light of a shorter wavelength. In particular, the change-over from i-line (365 nm) to shorter wavelength KrF laser (248 nm) brought about a significant innovation,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More