Member for a Plasma Processing Apparatus and Method of Manufacturing the Same

Abstract

A member for a plasma processing apparatus, which is excellent in film-formability, durability, and reliability, is provided.On a substrate, a ceramic film having a purity not less than 98% is provided. In the ceramic film, grains constituting the film have a grain diameter not greater than 50 nm and the amount of moisture released from the film is not more than 1019 molecules / cm2.

Description

TECHNICAL FIELD[0001]This invention relates to a member for a plasma processing apparatus for manufacturing an electronic component, such as a semiconductor device and a liquid crystal panel, and to a method of manufacturing the same.BACKGROUND ART[0002]As a process of manufacturing a semiconductor device, a liquid crystal panel, and the like, there are a film forming process and a dry etching process which are carried out by plasma processing on a Si wafer and a glass substrate. Upon the plasma processing, various corrosive gases are used. A conventional chamber inner wall is made of metal and exposed in an uncovered state inside a chamber. However, with recent improvement of an integration degree of the semiconductor device and the like, a permissible level of metal contamination is becoming extremely low. Further, in order to achieve a higher quality of the plasma processing, plasma having a higher density is used year after year.[0003]Therefore, as a member exposed inside the ch...

AI Technical Summary

Benefits of technology

[0044]The member for a plasma processing apparatus according to the present invention is excellent in film formability, durability, and reliability.

[0045]The sol-gel film in the present invention is highly dense and highly flat and smooth and therefore has high plasma resistance in a high density plasma environment. Further, also in a corrosive gas environment and in a chemical environment, the sol-gel film exhibits high gas resistance and high chemical resistance because the film is highly dense so as to protect a substrate.

[0046]In the conventional technique, uniform film formation onto a complicated configuration, an inner surface of a pipe, or the like is impossible. According to the present invention, film formation is easily performed by pouring a liquid sol or by dipping.

[0047]Further, by forming the highly dense sol-gel film on a surface of a sprayed film, particle generation from the sprayed film can be suppressed.

[0048]Furthermore, when a composite film obtained by pretreatment or surface treatment of the sprayed film or a composite film having a sandwich structure is exposed to a corrosive gas, peeling of the sprayed film can be suppressed because the dense sol-gel film blocks the corrosive gas.

Problems solved by technology

However, with recent improvement of an integration degree of the semiconductor device and the like, a permissible level of metal contamination is becoming extremely low.

However, it is extremely difficult to manufacture a recent large-scaled plasma processing chamber corresponding to 8-inch and 12-inch Si wafers and a large-sized liquid crystal substrate by the member made of the ceramic sintered body.

This is attributed to a problem of a low yield and a high manufacturing cost.

Therefore, insufficient melting of a ceramic material is easily caused to occur.

Also, countless microcracks are generated on the sprayed film due to quenching from a molten state.

In a plasma processing chamber manufactured by using the member having the sprayed film, when a corrosive gas and plasma are brought into contact with the sprayed film, the corrosive gas penetrates the consecutive pores or the microcracks of the sprayed film to cause corrosion of the substrate to occur.

Eventually, there arises a problem of peeling of the sprayed film or the like.

Between such a thick sprayed film and the metallic substrate, mismatch in linear expansion coefficient occurs.

After repetition of temperature rising and cooling in plasma processing, the sprayed film is peeled off due to the mismatch in linear expansion coefficient.

Therefore, these techniques are not effective as a method of manufacturing a member for a large-sized and complicated-shaped plasma processing apparatus.

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