Ceramic coating member for semiconductor processing apparatus

A technology for processing devices and covering components, which is applied in semiconductor/solid-state device manufacturing, superimposed layer plating, electrical components, etc., can solve problems such as corrosive environments and instrument damage, and achieve improved plasma output, increased productivity, and improved The effect of etch effect and speed
CN101074473BActive Publication Date: 2012-05-30TOKYO ELECTRON LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
TOKYO ELECTRON LTD
Publication Date
2012-05-30

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Abstract

A ceramic coating member is provided for improving durability of a member arranged inside a container of a semiconductor processing apparatus for performing plasma etching process or the like under strong corrosion resistant environment. A porous layer composed of a sprayed coating of an oxide material in the group IIIa in the periodic table is provided on the front plane of a metal or nonmetal base material, directly or through an undercoat layer. On the layer, a secondary recrystallized layer is formed by irradiation of high energy of electronic beams, laser beams and the like.
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Description

technical field

[0001] The present invention relates to a ceramic covering member for semiconductor processing equipment, and is particularly suitable as a covering member for members, parts, etc. arranged in a semiconductor processing container for performing plasma etching processing or the like. Background technique

[0002] Equipment used in the field of semiconductors and liquid crystals is often processed using plasma energy of a highly corrosive halogen-based etching gas. For example, by semiconductor processing equipment, plasma is generated in a fluorine-based or chlorine-based corrosive gas atmosphere or a mixed gas atmosphere of these gases and an inert gas. Processing (etching) to form a fine wiring pattern.

[0003] In the case of this processing technology, at least a part of the wall surface of the reaction vessel or the components or parts (pedestal, electrostatic chuck, electrode, etc.) arranged inside it are easily corroded by plasma energy. Therefore, It...

Claims

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