Unlock instant, AI-driven research and patent intelligence for your innovation.

P type conductive cuprous iodide monocrystal and hydrothermal growing method thereof

A growth method and single crystal technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of cumbersome operation, difficulty in growing large-sized crystals, poor crystal quality, etc., and achieve simple process, low-cost equipment, and easy operation convenient effect

Active Publication Date: 2013-02-06
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the first and second methods have a faster growth rate, crystals with a size of about 9mm can also be obtained, but due to the high growth temperature, the quality of the obtained crystals is poor
The sol-gel method can grow CuI crystals at room temperature, and can obtain crystals with high purity, low stress, and small defects, and the cost of crystal growth is also low. However, due to the slow growth rate and cumbersome operation, large-sized crystals are more difficult
In the 1970s, V.I.Popolitov et al. reported a method of high-temperature hydrothermal growth of CuI crystals using HI as a mineralizer, and grew a size of 3×4×5mm 3 crystals, but because the growth temperature is as high as 250 to 300 °C, the mineralizer HI is easy to decompose at this temperature, and the quality of the obtained crystals is relatively poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • P type conductive cuprous iodide monocrystal and hydrothermal growing method thereof

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0022] Press the CuI raw material into a sheet under a pressure of 20MPa, and sinter it in a nitrogen atmosphere at 200°C for about 24 hours. Baffle plate, according to the filling degree of 80%, add ammonium iodide solution with a concentration of 1.4mol / L to the autoclave, add iodine according to 0.001% mass percentage, and cut the CuI seed wafer according to the surface Fix it on the seed crystal frame and put it into the upper growth area of ​​the hydrothermal kettle, then seal the hydrothermal kettle and put it into a well-type resistance furnace controlled by a temperature controller. Temperature difference and pressure, the temperature in the dissolution zone is 210°C, the temperature in the growth zone is 170°C, the temperature difference is 40°C, and the working pressure is about 5MPa; the constant temperature is maintained for 30 days, and finally the temperature is lowered and the kettle is opened to obtain a weight of each piece. Tens of grams of high-quality P-ty...

example 2

[0024]According to the steps of Example 1, the difference is that a platinum bushing with a specification of Φ48×790mm is added to the autoclave, the amount of iodine added is 0.1%, the temperature in the dissolution zone is controlled at 140°C, the temperature in the growth zone is controlled at 120°C, and the temperature difference is 20°C. ℃, the working pressure is about 3MPa, and the constant temperature is maintained for 20 days. Finally, the temperature is lowered, the kettle is opened, and the product is dried at 200 ℃ for 20 hours, and the P-type CuI single crystal can be obtained, and the doping mass percentage of iodine is 400ppm , after the semiconductor performance test, the carrier concentration is about 10 16 cm -3 , the carrier mobility is about 40 cm 2 ·V -1 ·s -1 .

example 3

[0026] According to the steps of Example 2, the difference is that the temperature in the dissolution zone is 220°C, the temperature in the growth zone is 190°C, the temperature difference is 30°C, and the working pressure is about 3.0MPa; the constant temperature is kept for 10 days, and finally the temperature is lowered and the kettle is opened. CuI single crystal with light yellow P-type conductivity was obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
carrier concentrationaaaaaaaaaa
carrier mobilityaaaaaaaaaa
carrier concentrationaaaaaaaaaa
Login to View More

Abstract

The invention discloses a P type conductive CuI monocrystal and a hydrothermal growing method thereof. The grown CuI crystal is gamma phase, and is a direct-gap P type conductive semiconductor. The invention uses a low temperature hydrothermal method to realize growth of the P type conductive good-quality CuI crystal. The obtained CuI crystal can be used as a P type semiconductor substrate monocrystal for manufacturing a wide bandgap semiconductor photoelectric device, and also can be used as an ultrafast scintillation crystal for measuring an electron beam with ultra-high counting rate, gamma ray and X ray. Because of simple process, convenient operation and low equipment cost, the method is beneficial to industrial production. As doping elements can be added in mineralizer solution to regulate current carriers, the method can realize regulation on the current carriers of a CuI crystal material.

Description

technical field [0001] The invention relates to a CuI single crystal with P-type conductivity and a growth method thereof, belonging to the field of inorganic non-metallic materials. Background technique [0002] CuI crystal with cubic sphalerite structure is a P-type wide bandgap compound semiconductor material with direct bandgap of I-VII group. CuI single crystal has the characteristics of large band gap (3.1eV) and high exciton binding energy (62meV). Therefore, this material has excellent optical and electrical properties, and has excellent conditions for emitting blue light or near-ultraviolet light. It is expected to A variety of semiconductor light emitting devices have been developed. In recent years, it has been found that it is also a known inorganic scintillation material with the fastest time response, its luminescence decay time is only 90ps, and there is no slow component, it is expected to be used in ultra-high count rate electron beam measurement, gamma and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B7/10
Inventor 陈达贵林文文黄丰王永净林璋
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI