Solar cell silicon slice detergent and method for using same

Abstract

The invention provides a solar cell silicon slice detergent and a method for using the same and belongs to the technical field of solar cell production. The detergent is prepared by DZ1, DZ2 and water in a volume ratio of 5 to 15:1 to 10:100, wherein the DZ1 comprises sodium alkyl benzene sulfonate, sodium metasilicate pentahydrate, polyvinyl alcohol, polyethylene glycol and the water in a mol ratio of 5:7:3:7:6:72; and the DZ2 comprises ammonium hydroxide, hydrogen peroxide and the water the mol ratio of 5:15:80. The method for using the detergent comprises the following steps: placing a cut mono-crystalline silicon piece in the detergent and ultrasonically cleaning the cut mono-crystalline silicon piece at the temperature of between 40 and 70 DEG C for 5 to 20 minutes. The cleaning time and the cleaning temperature are accordant with the concentration of DZ1 and DZ2 in the detergent, so surface grease produced by linear cutting of the mono-crystalline silicon and metallic impurities in the silicon slice are effectively removed.

Description

technical field [0001] The invention provides a cleaning agent for silicon wafers of solar cells and a method for using the same, belonging to the technical field of solar cell production. Background technique [0002] The importance of silicon wafer cleaning to the semiconductor industry has attracted people's attention as early as the early 1950s, because the contamination on the surface of silicon wafers will seriously affect the performance, reliability and yield of cells. The pollutants on the surface of the silicon wafer are mainly in the form of atoms, ions, molecules or films, and exist on the surface of the silicon wafer or in the oxide film on the surface of the silicon wafer by physical or chemical methods. Silicon wafer cleaning requires that all kinds of impurities can be removed without damaging the silicon wafer. Cleaning can be divided into physical cleaning and chemical cleaning. Chemical cleaning is divided into aqueous cleaning and gas phase cleaning. Bec...

AI Technical Summary

Problems solved by technology

At present, silicon wafers use multi-wire cutting machines. Multi-wire cutting machines use steel wires to drive silicon carbide abrasives to cut silicon wafers, which will cause grease pollution on the surface of silicon wafers. Metal impurities usually exist in monocrystalline silicon. They come from Raw material pollution, quartz crucible and crucible coating pollution, the pollution of these impurities, especially the metal impurities will form lattice defects in the high temperature diffusion in the subsequent channel, which seriously affects the various performance indicators of the cell