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Method for preparing Co3O4 composite film on surface of single crystal silicon

A single crystal silicon wafer and composite thin film technology, which is applied to the device for coating liquid on the surface, special surface, pretreatment surface, etc., can solve the problems of cumbersome process conditions and long heat treatment time, and achieve simple process and solve tribological problems. The problem, the simple effect of the process method

Inactive Publication Date: 2010-06-23
SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention discloses a method for preparing Co on the surface of a single crystal silicon wafer. 3 o 4 The method of composite thin film can effectively overcome the drawbacks of the self-assembled ultra-thin polymer film preparation method in the prior art, complicated process conditions and long heat treatment time. The present invention prepares Co on the surface of a single crystal silicon wafer. 3 o 4 The method of composite thin film, the process is simple, and the self-assembled composite thin film has good anti-friction performance, which solves the tribological problems of micro-mechanical systems

Method used

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Examples

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Effect test

Embodiment 1

[0017] Pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, cool it naturally at room temperature, take out the monocrystalline silicon wafer, and repeat it with deionized water. Rinse, place in a desiccator to dry. After drying, soak in Pirahan solution (H 2 SO 4 :H 2 o 2 =70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device and dried in an oven, and then immersed in the prepared mercaptosilane In the solution, let it stand for 6 hours, the molar concentration of the components of the mercaptosilane solution is: 3-mercaptopropylmethyldimethoxysilane 0.5mmol / L, the solvent is benzene solution; after taking it out, use chloroform, acetone, deionized After rinsing with water to remove organic substances physically adsorbed on the surface, blow dry with nitrogen, place in a nitric acid solution with a ...

Embodiment 2

[0023] Pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia with an electric furnace for 6 hours, cool it naturally at room temperature, take out the monocrystalline silicon wafer, and repeat it with deionized water Rinse, place in a desiccator to dry. After drying, soak in Pirahan solution (H 2 SO 4 :H 2 o 2=70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device and dried in an oven, and then immersed in the prepared mercaptosilane In the solution, let it stand for 8 hours, the molar concentration of the components of the mercaptosilane solution is: 3-mercaptopropylmethyldimethoxysilane 0.1mmol / L, the solvent is benzene solution; after taking it out, use chloroform, acetone, deionized After washing with water to remove the organic matter physically adsorbed on the surface, dry it with nitrogen and place it in a nitric acid solution with...

Embodiment 3

[0028] Pretreat the monocrystalline silicon wafer, soak the monocrystalline silicon wafer in aqua regia, heat the aqua regia in an electric furnace for 5 hours, cool it naturally at room temperature, take out the monocrystalline silicon wafer, and repeat it with deionized water. Rinse, place in a desiccator to dry. After drying, soak in Pirahan solution (H 2 SO 4 :H 2 o 2 =70:30, V / V), treated at room temperature for 1 hour, ultrasonically cleaned with deionized water, placed in a dust-proof device and dried in an oven, and then immersed in the prepared mercaptosilane In the solution, let it stand for 7 hours, the molar concentration of the components of the mercaptosilane solution is: 3-mercaptopropyltrimethoxysilane 1.0mmol / L, and the solvent is benzene solution; after taking it out, wash it with acetone, chloroform, and deionized water to remove it. After the organic matter is physically adsorbed on the surface, dry it with nitrogen and place it in a nitric acid soluti...

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Abstract

The invention relates to a method for preparing a Co3O4 composite film on the surface of single crystal silicon. A single crystal substrate with a processed surface is used as a base material, sulfonic silane is prepared on the surface by a self-assembly method, then the substrate is put in a Co3O4 dispersion, and the Co3O4 composite film is prepared on the surface. The method comprises the following steps: immersing the substrate in aqua fortis for heating for 5-6 hours; taking out and cleaning with deionized water; putting in a hydroxylation solution for processing for 1 hour at room temperature; immersing in a prepared mercapto silane solution after cleaning and drying, standing for 6-8 hours and taking out; washing, drying with nitrogen, and putting in nitric acid; oxidating end thiol into sulfonyl in situ, then putting the substrate in a Co3O4 suspension, standing for 2-24 hours at the temperature of 20-60 DEG C, and taking out; drying with nitrogen after washing, and obtaining the composite film deposited with Co3O4 on the surface. The method can reduce a friction coefficient from 0.8 in no film to 0.1 and has very obvious antifriction action.

Description

technical field [0001] The invention relates to a method for preparing Co on the surface of a single crystal silicon wafer 3 o 4 Composite film method. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribological problems of the surface of micro-machines. Due to the advantages of high hardness, low cost and small surface roughness of silicon material, the application in MEMS has been paid more and more attention. However, silicon materials without surface treatment are highly brittle, and surface cracks are prone to delamination wear and brittle fracture under low tensile stress, which is difficult to meet the requirements of use. Therefore, surface modification technology is required to improve the surface micromechanical properties of silicon materials. To improve the microscopic friction and wear properties of silicon materials. At present,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00B05D1/18B05D3/10B05D5/00
Inventor 安双利
Owner SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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