Ultra-fine cemented carbide tool and method for preparing surface nano-composite film thereof
A cemented carbide and nano-composite technology, applied in the direction of metal material coating process, coating, layered products, etc., can solve the problem that the comprehensive performance of cemented carbide cannot be further improved, the friction coefficient is difficult to be lower than 0.1, and it is not suitable for super Surface modification of fine-grained cemented carbide tools, etc., to achieve the effects of improving processing quality and tool life, reducing production costs, high wear resistance and high temperature performance
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Embodiment 1
[0019] After cleaning and drying the ultra-fine-grained carbide micro-drills, they are placed on the loading jig of the vacuum chamber of the arc ion plating equipment, and a part of the pure graphite target and a part of the pure zirconium target are installed on the position of the cathode arc source. Vacuum to 5×10-3Pa, pass argon gas to 1.0Pa, apply -800V×20kHz×40% pulse bias to trigger glow plasma, and use the ions in the plasma to clean the micro-drill by sputtering for 10 minutes ; Then reduce the bias voltage amplitude to -300V, reduce the argon pressure to 0.8Pa, start the graphite target and zirconium target cathode arc, the graphite target arc flow is 50A, the zirconium target arc flow is 80A, and then feed nitrogen, the nitrogen partial pressure is 0.5Pa, start to deposit DLC diamond-like carbon film doped with zirconium nitride nanocrystals, and the time is 40 minutes; after that time, unload the bias voltage, stop the arc, stop the gas, keep the vacuum for furnace...
Embodiment 2
[0021] Place the Φ100×50mm ultra-fine-grained cemented carbide extrusion die with an inner hole diameter of 50 mm on the loading jig in the vacuum chamber of the arc ion plating equipment after pretreatment such as cleaning and drying, and install it partly at the position of the cathode arc source Pure graphite target, part of which is installed with pure zirconium target, vacuumed to 5×10 -3 Pa, pass argon gas to 1.0Pa, add a pulse bias voltage of -800V×20kHz×40% to trigger glow plasma, and use the ions in the plasma to clean the mold by sputtering for 10 minutes; then reduce the bias voltage amplitude to -500V, reduce the argon pressure to 0.8Pa, start the cathode arc of graphite target and zirconium target, the arc flow of graphite target is 40A, the arc flow of zirconium target is 100A, then pass nitrogen gas, the partial pressure of nitrogen gas is 0.6Pa, start to deposit doped with Zirconium nitride nanocrystalline DLC diamond-like film, the time is 60 minutes; when the...
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