N-doped crystalline silicon and preparation method thereof

A silicon nitride and polysilicon technology, applied in the field of polysilicon, its preparation, and single crystal silicon, can solve the problems of inability to guarantee the growth of single crystal silicon, limitation of nitrogen doping concentration, limitation of single crystal growth process, etc. Simple, easy-to-control effects

Inactive Publication Date: 2010-10-20
王敬 +1
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, under the nitrogen atmosphere of more than 60 hours from melting silicon until the final single crystal is formed, the segregation of silicon nitride is unavoidable, and the precipitation of silicon nitride will inevitably lead to the formation of a large number of disloca

Method used

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Examples

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preparation example Construction

[0042] Based on the same reason as the preparation method of the above-mentioned polycrystalline silicon ingot, according to a preferred embodiment of the present invention, the amount of the above-mentioned silicon nitride nanopowder is preferably such that the nitrogen concentration in the master alloy silicon block is 20-100ppm amount.

[0043] According to one embodiment of the present invention, a nitrogen-doped polycrystalline silicon can be provided, which is prepared by the above-mentioned preparation method, wherein the polycrystalline silicon ingot contains 0.02-2ppm of electrically active dopants and 0.002-1ppm of nitrogen, the The electroactive dopant is any one of B, P, or Ga.

[0044] The present invention will be further described below through specific examples.

example 1

[0046] First, the mixture of polysilicon material and silicon nitride nano-powder with a particle size of 20nm is loaded in a quartz crucible, and the addition of the silicon nitride nano-powder is such that the nitrogen concentration in the master alloy silicon block is 100ppm . After that, install the furnace, vacuumize the furnace chamber and heat it to 1500°C. After it is completely melted, gradually reduce the temperature in the furnace to 1350°C at a cooling rate of 2°C / min, then turn off the heater and open the heat preservation cover to lower the temperature in the furnace chamber Naturally cool to room temperature, and then take out the silicon ingot and pulverize it into small blocks to obtain master alloy silicon blocks with high nitrogen content. When manufacturing master alloy silicon blocks, either single crystal furnaces or polycrystalline furnaces can be used, and the requirements for equipment are low.

[0047] Next, put the master alloy silicon block, polysi...

example 2

[0051] Put dislocation-free single crystal silicon in the bottom layer of the quartz crucible, and load the master alloy silicon block obtained in Example 1, polycrystalline silicon material and the mixture of B as an electrically active dopant on the upper layer and load it into a single crystal furnace , the furnace chamber is evacuated, while the crucible is heated, the bottom of the crucible is cooled by cold air until the temperature of the mixture part is 1480°C, at this temperature until the mixture is completely melted and the silicon monocrystalline The portion of the upper layer close to the mix melted. And because the cold air flows through the bottom of the crucible, the lower layer of monocrystalline silicon can be kept below the melting point of silicon, so that the monocrystalline silicon of a certain thickness in the lower layer remains as a seed crystal. Wherein, the amount of B added is such that the B doping concentration in the formed polycrystalline silico...

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Abstract

The invention discloses a preparation method of an N-doped polysilicon ingot. The preparation method comprises the following steps of: putting polysilicon and silicon nitride nanopowder with the grain size of 1 to 100nm in a quartz crucible and charging, vacuumizing a furnace room and heating to 1420 to 1550 DEG C, and preserving the temperature till mixture is fused completely; gradually reducing the cooling speed in 1 to 10 DEG C/min in a furnace till reaching 1350 to 1420 DEG C; then naturally cooling the temperature in the furnace room to the room temperature; taking the silicon ingot out and crushing into small pieces to obtain master alloy silicon blocks; putting mixture of the master alloy silicon blocks, the polysilicon material and electrical activity dopants in the quartz crucible, vacuumizing the furnace room and heating to 1420 to 1550 DEG C to obtain a fused silicon material mixture; and enabling the fused silicon material mixture to solidify to obtain the polysilicon ingot. According to the preparation method of the N-doped polysilicon, the invention can carry out N-doping by adopting conventional devices and has even N-doping, high N-doping concentration, simple entire process and low cost. In addition, the invention also discloses a preparation method of an N-doped monocrystalline silicon ingot.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to single crystal silicon, polycrystalline silicon and a preparation method thereof with relatively high mechanical strength. Background technique [0002] Solar energy is a renewable green energy source. Using the photoelectric conversion properties of semiconductor materials to prepare solar cells can convert solar energy into electrical energy. Since the birth of the first monocrystalline silicon solar cell in 1954, solar cell technology and industry have developed tremendously. Solar cells can be divided into: 1) silicon solar cells; 2) batteries made of inorganic salts such as gallium arsenide III-V compounds, cadmium sulfide, copper indium selenide and other multi-component compounds; 3) solar cells made of functional polymer materials 4) nanocrystalline solar cells, etc. Among them, silicon solar cells, especially crystalline silicon solar cells, have high conver...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B28/06C30B11/08
Inventor 王敬翟志华
Owner 王敬
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