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Preparation methods of multi-element metal chalcogen compound, target and coating material

A technology of chalcogen elements and multi-element metals, which is applied in the coating process of metal materials, non-metallic elements, chemical instruments and methods, etc., can solve problems such as incompatibilities, reaction conditions that cannot be mass-produced, and are not suitable for mass production. The effect of uniform distribution, improved yield rate and reduced production equipment cost

Inactive Publication Date: 2010-10-27
钟 润文 +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Chun YG et al. (7) Further, this method is used to synthesize elements copper, indium, gallium, and selenium to obtain CIGS powder. Only this method cannot be mass-produced due to limited reaction conditions.
[0014] Looking at the above technical solutions, some can only produce ternary compounds, some require high temperature and high pressure synthesis conditions and are not suitable for mass production, and some products contain halogen ions, which cannot meet the production and component requirements.

Method used

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  • Preparation methods of multi-element metal chalcogen compound, target and coating material
  • Preparation methods of multi-element metal chalcogen compound, target and coating material
  • Preparation methods of multi-element metal chalcogen compound, target and coating material

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preparation example Construction

[0036] figure 1 It is a flowchart of a preparation method of a polynary metal chalcogenide compound (Chalcogenide) provided by the present invention. The preparation method includes the following steps: In step 100, at least one container is used. In step 110, at least one of copper element, indium element and gallium element (for example, copper Cu, indium In, gallium Ga, copper Cu and indium In, copper Cu and gallium Ga, indium In and gallium Ga, or a combination of copper Cu and indium In and gallium Ga) and chalcogen elements (for example, sulfur S, selenium Se or tellurium Te) are placed in the container; the copper element, the indium element, and the gallium element are used elemental state simple substances as a starting material. In step 120, at least one weakly basic organic solvent with a boiling point higher than 240° C. and a pH value of 7-10 is provided, and the organic solvent is poured into the above container as a reaction solvent. Alternatively, at least o...

Embodiment 1

[0048] Heat a 500ml container (for example, a three-necked flask) to 100°C or above, blow in nitrogen, and remove water and oxygen for 1 hour. Then heat the gallium ingot to 30°C, and place about 0.06 mole of gallium, 0.2 mole of copper powder, 0.14 mole of indium powder and 0.5 mole of selenium powder in the above container, and mix with 1.0 mole of diphenylamine (organic solvent) in the container Mix, dissolve, and stir with a magnet for 1 hour, slowly heat to 240 ° C, after the temperature stabilizes, react for 24 hours, then cool down to 80 ° C or below, add a non-solvent (non-solvent) from which water has been removed (such as , methanol or toluene) 300ml, the black solid was precipitated, filtered, and then washed with a non-solvent (such as methanol or toluene), and the obtained solid was dried under vacuum at 50°C or above for 1 hour , and remove it. The non-solvent refers to a solvent that is miscible with the reaction organic solvent (eg, diphenylamine and p-phenyle...

Embodiment 2

[0051] Heat a 500ml container (for example, a three-necked flask) to 100°C or above, pass in an inert gas (for example, nitrogen, helium or argon), and remove water and oxygen for 1 hour. Then the gallium ingot is heated to 30°C, and about 0.04 moles of gallium, 0.18 moles of copper powder, 0.16 moles of indium powder and 0.44 moles of selenium powder are placed in the above container, and mixed with 0.6 moles of m-phenylenediamine (organic solvent) Mix and dissolve in a container, stir with a magnet for 1 hour, slowly heat to 260°C, wait for the temperature to stabilize, let it stand and react for 24 hours, then cool down to 80°C or below, add 100ml of methanol from which water has been removed, and then take out 20ml The black solution is dripped on a glass sheet, dried into a film, and scanned with an electron microscope (hereinafter referred to as SEM), and the scanning electron microscope photo is as follows: image 3 Shown, then, add 160ml non-solvent (non-solvent) (for ...

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Abstract

The invention relates to preparation methods of a multi-element metal chalcogen compound, a target and a coating material. The preparation method of the multi-element metal chalcogen compound comprises the following steps of: synthesizing an elementary substance powder selected from forming elements at normal pressure with a liquid phase synthesis method, wherein the used organic solvent in the synthesis process is an aromatic amines compound with a boiling point higher than 240 DEG C and pH value of 7-10, and thereby producing a copper-indium-gallium-selenium element compound through chelation reactions at high temperature. The compound can be particularly applied to the solar energy field of semiconductor films, can be directly coated into a film and sputtered to a film through producing a target, the selenylation process is unneeded, the production procedure can be reduced, the consistency of the film components is improved, and the product yield and the efficiency are enhanced.

Description

technical field [0001] The invention relates to a preparation method of a multi-element metal chalcogen compound, a target material and a coating material, and particularly relates to a method for applying the nano-powder of the multi-element metal chalcogen compound to the field of compound semiconductor thin film solar energy, which can be used The compound is directly coated to form a film and sputtered to form a film, without the need for a selenization process, thereby reducing production procedures and improving production efficiency. Background technique [0002] In recent years, copper indium gallium diselenide solar cell (Copper Indium Gallium diselenide Solar Cell, hereinafter referred to as CIGS solar cell) has been developed since 1997, and the cell efficiency has been improved from about 6% (proposed by the University of Maine) to the best cell efficiency It is 19.9% ​​(published by the National Energy Research Institute (NREL) in 2008), and has the advantages o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C01B19/04C01G15/00C01G3/12C04B35/547C23C14/06C09D11/02
CPCY02P20/133
Inventor 钟润文
Owner 钟 润文
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